公开(公告)号：WO0198563A3

公开(公告)日：2002-05-30

申请号：PCT/US0119077

申请日：2001-06-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： TEWS HELMUT HORST ,  FALTERMEIR JOHNATHAN E ,  MALIK RAJEEV ,  HEENAN CAROL ,  GLUSCHENKOV OLEG

IPC: C30B29/06 ,  C30B33/00 ,  H01L21/28 ,  H01L21/316 ,  H01L21/762 ,  H01L29/51

CPC classification number: H01L21/28185 ,  C30B29/06 ,  C30B33/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/28176 ,  H01L21/28211 ,  H01L21/31662 ,  H01L21/76202 ,  H01L29/513 ,  H01L29/518 ,  Y10S438/973

Abstract: A method for forming an oxide of substantially uniform thickness on at least two crystallographic planes of silicon, in accordance with the present invention, includes providing a substrate (step 100) where surfaces have at least two different crystallographic orientations of the silicon crystal (step 102). Atomic oxygen (O) is formed for oxidizing the surfaces (step 106). An oxide is formed (step 108) on the surfaces by reacting the atomic oxygen with the surfaces to simultaneously form a substantially uniform thickness of the oxide on the surfaces.

Abstract translation: 根据本发明，在硅的至少两个结晶平面上形成基本均匀厚度的氧化物的方法包括提供其中表面具有硅晶体的至少两个不同晶体取向的衬底（步骤100）（步骤102 ）。 形成氧化表面的原子氧（O）（步骤106）。 通过使原子氧与表面反应，在表面上形成氧化物（步骤108），同时在表面上形成基本均匀的氧化物厚度。