公开(公告)号：JPH10188840A

公开(公告)日：1998-07-21

申请号：JP35151397

申请日：1997-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： IN ZENSHIN ,  RI CHUKAN

IPC: C09K11/08 ,  B32B5/16 ,  H01J1/30 ,  H01J9/227 ,  H01J29/18 ,  H01J29/20 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide an emitting particle for a field emission display, whereby emitting efficiency of a luminescent layer is maximized and total surface permeability of light can be improved simultaneously with facilitating electron dispersion, and a forming method of the luminescent layer using the emitting particle for the field emission display. SOLUTION: An emitting particle 30 applying a coating is used, by a forming method of a luminescent layer for a field emission display, the luminescent layer for the field emission display is formed, on a transparent substrate 10 like glass, a transparent conductive layer 20 is formed, in its upper part, a luminescent layer 30a constituted by a powdery particle 30 applying a coating is formed. In the emitting particle for the field emission display for improving emitting efficiency, in a surface of a fluorescent material fine particle or transparent conductive particle formed into powder, coating a uniform thin film by an atomic layer epitaxy method is used.

公开(公告)号：JPH1050842A

公开(公告)日：1998-02-20

申请号：JP33398396

申请日：1996-12-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN SHUDAI ,  HAKU SHUTAI ,  SO JUNKO ,  IN ZENSHIN ,  CHO KOYOKU

IPC: H01L21/82 ,  H01L27/10 ,  H01L29/00

Abstract: PROBLEM TO BE SOLVED: To reduce loss of input energy for driving anti-fuse element by a method wherein an active layer is formed with a substance having low treatment temperature, and an insulation film is formed between the active layer and an electrode, composed of the insulation film having a uniform insulation breakdown voltage and a low insulation breakdown voltage. SOLUTION: On a silicon substrate 21, a first insulation film 22, a silicon- germanium layer 23a and a doped silicon-germanium layer 23b are formed. The doped silicon-germanium layer 23b is patterned to form silicon-germanium patterns 23 serving as an active layer. A second insulation layer 24 is formed on a first insulation film 22 containing the silicon-germanium patterns 23. It is etched to expose a surface of the silicon-germanium patterns 23, and a third insulation film 25 composed of TEOS is formed on the surface. Thereby, regulation in a thickness of the insulation film is facilitated and the degree of uniformity in a resistance value after programming can be enhanced.