公开(公告)号：JPH1050842A

公开(公告)日：1998-02-20

申请号：JP33398396

申请日：1996-12-13

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN SHUDAI ,  HAKU SHUTAI ,  SO JUNKO ,  IN ZENSHIN ,  CHO KOYOKU

IPC: H01L21/82 ,  H01L27/10 ,  H01L29/00

Abstract: PROBLEM TO BE SOLVED: To reduce loss of input energy for driving anti-fuse element by a method wherein an active layer is formed with a substance having low treatment temperature, and an insulation film is formed between the active layer and an electrode, composed of the insulation film having a uniform insulation breakdown voltage and a low insulation breakdown voltage. SOLUTION: On a silicon substrate 21, a first insulation film 22, a silicon- germanium layer 23a and a doped silicon-germanium layer 23b are formed. The doped silicon-germanium layer 23b is patterned to form silicon-germanium patterns 23 serving as an active layer. A second insulation layer 24 is formed on a first insulation film 22 containing the silicon-germanium patterns 23. It is etched to expose a surface of the silicon-germanium patterns 23, and a third insulation film 25 composed of TEOS is formed on the surface. Thereby, regulation in a thickness of the insulation film is facilitated and the degree of uniformity in a resistance value after programming can be enhanced.