公开(公告)号：WO0019481A9

公开(公告)日：2002-01-31

申请号：PCT/US9920890

申请日：1999-09-24

Applicant: LAM RES CORP ,  WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

Inventor： WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

IPC: H05H1/46 ,  C23C16/44 ,  H01J27/16 ,  H01J37/00 ,  H01J37/08 ,  H01J37/32 ,  H01J37/36 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J2237/022 ,  Y10S156/914 ,  Y10S156/916 ,  Y10T428/12347

Abstract: A high density plasma processing chamber (100) including an electrostatic chuck (106) for holding a wafer (104), and consumable parts that are highly etch resistant, less susceptible to generating contamination and temperature controllable is disclosed. The consumable parts include a chamber liner (130) having a lower support section and a wall that is configured to surround the electrostatic chuck. The consumable parts also include a liner support structure having a lower extension, a flexible wall, and an upper extension. The flexible wall is configured to surround an external surface of the wall of the chamber liner, and the liner support flexible wall is spaced apart from the wall of the chamber liner. The lower extension of the liner support is however, configured to be in direct thermal contact with the lower support section of the chamber liner. Additionally, a baffle ring (132) is part of the consumable parts, and is configured to be assembled with and in thermal contact with the chamber liner and the liner support. A heater (140) is capable of being thermally connected to the liner support for thermal conducting a temperature from the liner support to the chamber liner and the baffle ring. In a most preferred embodiment, the chamber liner and the baffle ring are made from materials that are innocuous to materials on the wafer being etched. In this manner, once these materials are exposed to the energy of the high density plasma sputtering, volatile products will be produced that are substantially similar to volatile etch products produced during the etching of surface layers of the wafer. These volatile products can then be removed from the chamber.

Abstract translation: 公开了一种高密度等离子体处理室（100），其包括用于保持晶片（104）的静电卡盘（106）和耐蚀刻性高的消耗部件，不易产生污染物和温度可控。 消耗部件包括具有下支撑部分的室衬套（130）和被构造成围绕静电卡盘的壁。 消耗部件还包括具有较低延伸部，柔性壁和上延伸部的衬垫支撑结构。 柔性壁构造成围绕室衬套的壁的外表面，并且衬套支撑柔性壁与室衬套的壁间隔开。 然而，衬套支撑件的较小的延伸部被构造成与腔室衬套的下支撑部分直接热接触。 此外，挡板环（132）是可消耗部件的一部分，并且构造成与腔室衬套和衬套支撑件组装并与其热接触。 加热器（140）能够被热连接到衬套支撑件，用于将从衬套支撑件到衬套和挡板环的温度导热。 在最优选的实施例中，腔室衬套和挡板环由对被蚀刻的晶片上的材料无害的材料制成。 以这种方式，一旦这些材料暴露于高密度等离子体溅射的能量，将产生基本上类似于在蚀刻晶片的表面层期间产生的挥发性蚀刻产物的挥发性产物。 然后可以从室中除去这些挥发性产物。

公开(公告)号：WO02080219B1

公开(公告)日：2002-12-05

申请号：PCT/US0209563

申请日：2002-03-29

Applicant: LAM RES CORP ,  CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

Inventor： CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: A radio frequency excitation coil of an inductive plasma processor includes a planar turn (103) connected in series with a segment (115) of the coil stacked above a portion of the planar turn. The stacked segment is placed around a region having weak radio frequency coupling to plasma due to azimuthal asymmetries in the chamber and/or the excitation coil. In a single winding embodiment, the stacked segment is close to an interconnection gap between two adjacent planar turns and extends in both directions from the gap to compensate low radio frequency coupling to plasma in the gap region. In an embodiment including two electrically parallel spatially concentric windings, the stacked segment extends beyond one side of an interconnection gap of two adjacent turns, and is aligned with the planar turn such that one end of the stacked segment is directly connected to an end of the planar turn via a straight, short stub. Terminal (111) of the coil is connected to RF excitation circuitry (28) terminals in a housing above the coil by leads (128) extending smoothly and gradually without sharp bends between the coil terminals and the excitation circuitry terminals. Ends of the planar turn (113) and the stacked segment are connected by a lead (116) extending smoothly and gradually without sharp bends between its ends.

Abstract translation: 感应等离子体处理器的射频激励线圈包括与堆叠在平面转弯的一部分上方的线圈的区段（115）串联连接的平坦转弯（103）。 由于腔室和/或激励线圈中的方位角不对称，堆叠的节段被放置在具有与等离子体耦合的弱射频的区域周围。 在单绕组实施例中，堆叠段接近两个相邻平面线匝之间的互连间隙并且从间隙沿两个方向延伸以补偿间隙区域中与等离子体的低射频耦合。 在包括两个电并联的空间同心绕组的实施例中，堆叠节段延伸超过两个相邻匝的互连间隙的一侧，并且与平面匝对齐，使得堆叠节段的一端直接连接到 通过一个直的，短的平头转弯。 线圈的端子（111）通过在线圈端子和激励电路端子之间平滑且逐渐延伸而没有急剧弯曲的引线（128）连接到线圈上方壳体中的RF激励电路（28）端子。 平面转弯（113）和堆叠部分的端部通过在其端部之间没有急剧弯曲地平稳且逐渐延伸的引线（116）连接。

公开(公告)号：WO02080221B1

公开(公告)日：2002-11-28

申请号：PCT/US0209565

申请日：2002-03-29

Applicant: LAM RES CORP ,  CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

Inventor： CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/321

Abstract: An inductive plasma processor includes a multiple winding radio frequency coil having plural electrically parallel, spatially concentric windings (1) having different amounts of RF power supplied to them, and (2) arranged to produce electromagnetic fields having different couplings to different regions of plasma in the chamber to control plasma flux distribution incident on a processed workpiece. The coil is powered by a single radio frequency generator via a single matching network. Input and output ends of each winding are respectively connected to input and output tuning capacitors. In a first embodiment, the location of maximum inductive coupling of the radio frequency to the plasma and the current magnitude in each winding are respectively mainly determined by values of the output and input capacitors. By adjusting all the input and output capacitors simultaneously, the current to a winding can be varied while the current to the other winding can be maintained constant as if these windings were completely de-coupled andindependent. Therefore, the capacitors can control the plasma density in different radial and azimuthal regions. In another embodiment, a relatively low frequency drives the coil whereby each winding has a relatively short electrical length, causing substantially small standing wave current and voltage variations. The output capacitor for each winding adjusts current magnitude, to eliminate the need for the input capacitors and reduce operational complexity.

Abstract translation: 感应等离子体处理器包括具有多个并联的空间上同心的绕组（1）的多绕组射频线圈，其具有提供给它们的不同量的RF功率，以及（2）被布置成产生具有不同耦合到不同等离子体区域的电磁场 该室用于控制入射在加工工件上的等离子体通量分布。 线圈由单个射频发生器通过单个匹配网络供电。 每个绕组的输入和输出端分别连接到输入和输出调谐电容器。 在第一实施例中，射频与等离子体的最大电感耦合的位置和每个绕组中的电流大小分别主要由输出和输入电容器的值决定。 通过同时调节所有输入和输出电容器，可以改变绕组的电流，同时可以保持恒定的电流到同一绕组的电流，就好像这些绕组完全去耦合和独立的一样。 因此，电容器可以控制不同径向和方位区域的等离子体密度。 在另一个实施例中，较低频率驱动线圈，由此每个绕组具有相对较短的电长度，导致基本上较小的驻波电流和电压变化。 每个绕组的输出电容器调整电流幅值，以消除对输入电容器的需要，降低操作复杂度。

公开(公告)号：WO0122478A9

公开(公告)日：2002-11-28

申请号：PCT/US0024866

申请日：2000-09-11

Applicant: LAM RES CORP ,  KENNEDY WILLIAM S ,  MARASCHIN ROBERT A ,  WICKER THOMAS E

Inventor： KENNEDY WILLIAM S ,  MARASCHIN ROBERT A ,  WICKER THOMAS E

IPC: H05H1/46 ,  B01J19/02 ,  B01J19/08 ,  C04B35/565 ,  C23C16/44 ,  H01L21/00 ,  H01L21/3065

CPC classification number: H01L21/67115 ,  C23C16/4401

Abstract: A plasma processing chamber including a ceramic liner heated by radiant heating. The liner can be a series of tiles or a continuous cylindrical liner. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. To remove excess heat from the liner, the ceramic liner can be supported on a resilient aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.

Abstract translation: 包括通过辐射加热加热的陶瓷衬垫的等离子体处理室。 衬垫可以是一系列瓷砖或连续的圆柱形衬套。 衬垫和诸如气体分配板和等离子体屏幕的其它部件可以由SiC制成，其有利地限制等离子体并且提供腔室的内表面的温度控制。 为了从衬里去除多余的热量，陶瓷衬套可以被支撑在弹性铝支架上，弹性铝支撑框架将热量从衬套传导到温度受控构件，例如室的顶板。 支撑框架可以包括连续的上部和分段的下部，其允许在等离子体室中的半导体衬底的处理期间容纳热应力。

公开(公告)号：WO0019481A2

公开(公告)日：2000-04-06

申请号：PCT/US9920890

申请日：1999-09-24

Applicant: LAM RES CORP ,  WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

Inventor： WICKER THOMAS E ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S

IPC: H05H1/46 ,  C23C16/44 ,  H01J27/16 ,  H01J37/00 ,  H01J37/08 ,  H01J37/32 ,  H01J37/36 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J2237/022 ,  Y10S156/914 ,  Y10S156/916 ,  Y10T428/12347

Abstract: A high density plasma processing chamber (100) including an electrostatic chuck (106) for holding a wafer (104), and consumable parts that are highly etch resistant, less susceptible to generating contamination and temperature controllable is disclosed. The consumable parts include a chamber liner (130) having a lower support section and a wall that is configured to surround the electrostatic chuck. The consumable parts also include a liner support structure having a lower extension, a flexible wall, and an upper extension. The flexible wall is configured to surround an external surface of the wall of the chamber liner, and the liner support flexible wall is spaced apart from the wall of the chamber liner. The lower extension of the liner support is however, configured to be in direct thermal contact with the lower support section of the chamber liner. Additionally, a baffle ring (132) is part of the consumable parts, and is configured to be assembled with and in thermal contact with the chamber liner and the liner support. A heater (140) is capable of being thermally connected to the liner support for thermal conducting a temperature from the liner support to the chamber liner and the baffle ring. In a most preferred embodiment, the chamber liner and the baffle ring are made from materials that are innocuous to materials on the wafer being etched. In this manner, once these materials are exposed to the energy of the high density plasma sputtering, volatile products will be produced that are substantially similar to volatile etch products produced during the etching of surface layers of the wafer. These volatile products can then be removed from the chamber.

Abstract translation: 公开了一种高密度等离子体处理室（100），其包括用于保持晶片（104）的静电卡盘（106）和耐蚀刻性高的消耗部件，不易产生污染物和温度可控。 消耗部件包括具有下支撑部分的室衬套（130）和被构造成围绕静电卡盘的壁。 消耗部件还包括具有较低延伸部，柔性壁和上延伸部的衬垫支撑结构。 柔性壁构造成围绕室衬套的壁的外表面，并且衬套支撑柔性壁与室衬套的壁间隔开。 然而，衬套支撑件的较小的延伸部被构造成与腔室衬套的下支撑部分直接热接触。 此外，挡板环（132）是可消耗部件的一部分，并且构造成与腔室衬套和衬套支撑件组装并与其热接触。 加热器（140）能够被热连接到衬套支撑件，用于将从衬套支撑件到衬套和挡板环的温度导热。 在最优选的实施例中，腔室衬套和挡板环由对被蚀刻的晶片上的材料无害的材料制成。 以这种方式，一旦这些材料暴露于高密度等离子体溅射的能量，将产生基本上类似于在蚀刻晶片的表面层期间产生的挥发性蚀刻产物的挥发性产物。 然后可以从室中除去这些挥发性产物。

公开(公告)号：JP2010003699A

公开(公告)日：2010-01-07

申请号：JP2009181946

申请日：2009-08-04

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: PROBLEM TO BE SOLVED: To provide a plasma generating device capable of controllable and uniform inductive coupling in a plasma reactor. SOLUTION: A double coil coupling system uses parallel antenna elements. Two coils (a coil 1 and a coil 2) are symmetrical, and each loop of the coils consists of a semicircle and parallel antenna elements. An RF is simultaneously supplied to a center of a parallel element of each coil (closer to a parallel axis), end parts of other coils are coupled to be terminated on the ground through a capacitor C T . COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种能够在等离子体反应器中具有可控和均匀的电感耦合的等离子体产生装置。

解决方案：双线圈耦合系统使用并联天线元件。 两个线圈（线圈1和线圈2）是对称的，并且线圈的每个环路由半圆形和平行的天线元件组成。 RF同时提供给每个线圈的平行元件的中心（更靠近平行的轴），其它线圈的端部通过电容器C连接到地面上。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008235924A

公开(公告)日：2008-10-02

申请号：JP2008111896

申请日：2008-04-22

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： WICKER THOMAS E ,  MARASCHIN ROBERT A

IPC: H01L21/3065 ,  H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/302 ,  H01L21/31

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J2237/022

Abstract: PROBLEM TO BE SOLVED: To provide a method of processing a substrate by reducing particle contamination of the substrate in a plasma processing chamber when the substrate is consecutively processed to process the substrate.
SOLUTION: A plasma processing chamber is provided with a substrate holder 12 and silicon nitride members such as a liner 30, focus ring 14, or gas distribution plate 22. The member has an exposed face in the vicinity of the substrate holder 12. The exposed face is effective for minimizing particle contamination when processing the substrate. The chamber inductively couples with RF energy through the gas distribution plate 22 to supply a plasma gas with energy to make it a plasma state.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种当连续处理衬底以处理衬底时，通过减小等离子体处理室中的衬底的颗粒污染来处理衬底的方法。 解决方案：等离子体处理室设置有衬底保持器12和诸如衬垫30，聚焦环14或气体分配板22的氮化硅构件。该构件在衬底保持器12附近具有暴露面 露出的面对于在加工基材时使颗粒污染最小化是有效的。 腔室通过气体分布板22感应地耦合RF能量，以提供具有能量的等离子体气体以使其成为等离子体状态。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：AU4954499A

公开(公告)日：2000-01-17

申请号：AU4954499

申请日：1999-06-18

Applicant: LAM RES CORP

Inventor： CHEN JIAN J ,  VELTROP ROBERT G ,  WICKER THOMAS E

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A radio frequency plasma multiple-coil antenna allows for controllable, uniform inductive coupling within a plasma reactor. According to exemplary embodiments, multiple coils are positioned on a dielectric window of a plasma chamber, and are powered by a single radio frequency generator and tuned by a single matching network. Each coil is either planar or a combination of a planar coil and a vertically stacked helical coil. The input end of each coil is connected to an input tuning capacitor and the output end is terminated to the ground through an output tuning capacitor. The location of the maximum inductive coupling of the radio frequency to the plasma is mainly determined by the output capacitor, while the input capacitor is mainly used to adjust current magnitude into each coil. By adjusting the current magnitude and the location of the maximum inductive coupling within each coil, the plasma density in different radial and azimuthal regions can be varied and controlled, and therefore, radially and azimuthally uniform plasma can be achieved.

公开(公告)号：DE60220652T2

公开(公告)日：2007-10-25

申请号：DE60220652

申请日：2002-03-29

Applicant: LAM RES CORP

Inventor： VELTROP ROBERT G ,  CHEN JIAN J ,  WICKER THOMAS E

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/205 ,  H01L21/3065

Abstract: An inductive plasma processor includes an RF plasma excitation coil having plural windings, each having a first end connected in parallel to be driven by a single RF source via a single matching network. Second ends of the windings are connected to ground by termination capacitors, in turn connected by a lead to ground. A current sensor including a winding around a toroidal core is coupled to the lead between each termination capacitor and ground. The current sensor is surrounded by a grounded shield. There is minimum electromagnetic interference from an ambient RF environment to the current sensor, to provide an accurate current sensor.

公开(公告)号：MY126066A

公开(公告)日：2006-09-29

申请号：MYPI20006003

申请日：2000-12-20

Applicant: LAM RES CORP

Inventor： WICKER THOMAS E

IPC: C23C16/00 ,  H01J37/32

Abstract: A PLASMA PROCESSING CHAMBER INCLUDING A SLIP CAST PART HAVING A SURFACE THEREOF EXPOSED TO THE INTERIOR SPACE OF THE CHAMBER. THE SLIP CAST PART INCLUDES FREE SILICON CONTAINED THEREIN AND A PROTECTUVE LAYER ON THE SURFACE WHICH PROTECTS THE SILICON FROM BEING ATTACKED BY PLASMA IN THE INTERIOR SPACE OF THE CHAMBER.THE SLIP CAST PART CAN BE MADE OF SLIP CAST SILICON CARBIDE COATED WITH CVD SILICON CARBIDE. THE SLIP CAST PART CAN COMPRISE ONE OR MORE PARTS OF THE CHAMBER SUCH AS A WAFER PASSAGE INSERT (21), A MONOLITHIC OR TILED LINER (20), A PLASMA SCREEN(22), A SHOWERHEAD, DIELECTRIC MEMBER, OR THE LIKE. THE SLIP CAST PART REDUCES PARTICLE CONTAIMINATION AND REDUCES PROCESS DRIFT IN PLASMA PROCESSES SUCH AS PLASMA ETCHING OF DIELECTRIC MATERIALS SUCH AS SILICON OXIDE.