公开(公告)号：US3814965A

公开(公告)日：1974-06-04

申请号：US27493272

申请日：1972-07-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： MATSUMURA T ,  HASEGAWA T

IPC: H01J29/45 ,  H01J29/89 ,  H01J31/46 ,  H04N9/07 ,  H01J29/36

CPC classification number: H01J29/898 ,  H01J31/46 ,  H01J2229/8916

Abstract: In a color image pick-up tube using a silicon target plate as a photo-electric transducer, the main portion of the face plate is slightly elevated except at its peripheral annular portion to form a flat-topped convexity on which a color filter is formed and the peripheral protrusion of the silicon target plate is fastened to the peripheral annular portion of the face plate, so that the target area of the target plate is arranged in opposition to the color filter with a small gap left therebetween.

Abstract translation: 在使用硅靶板作为光电换能器的彩色图像拾取管中，面板的主要部分在其外围环形部分之外略微升高，以形成平面凸起，在其上形成滤色器 并且硅靶板的周边突起被紧固到面板的周边环形部分，使得目标板的目标区域与滤色器相对地布置成与其间留有小间隙。

公开(公告)号：US3764864A

公开(公告)日：1973-10-09

申请号：US3764864D

申请日：1967-03-21

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： OKUMURA T ,  TSUCHITANI A ,  HASEGAWA T

IPC: H01L27/02 ,  H01L11/00 ,  H01L15/00

CPC classification number: H01L27/0255

Abstract: An insulated gate field-effect transistor constructed by forming, in a portion of the semiconductor substrate close to the source region, a region which constitutes a p-n junction with the substrate, and by connecting this latter region to the gate electrode, whereby there is caused, between said region and the source, a current due to punch-through at high gate voltage so that the breakdown of the transistor is prevented.

Abstract translation: 一种绝缘栅场效应晶体管，其通过在靠近源极区域的半导体衬底的一部分中形成与衬底构成pn结的区域，并将后一区域连接到栅极电极，由此产生 在所述区域和源极之间，由于在高栅极电压下穿通导致的电流，从而防止了晶体管的击穿。

公开(公告)号：SE307198B

公开(公告)日：1968-12-23

申请号：SE427067

申请日：1967-03-29

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： HASEGAWA T ,  OKUMURA T ,  TSUCHITANI A

IPC: H01L27/02 ,  H01L11/14

Abstract: An insulated gate field-effect transistor constructed by forming, in a portion of the semiconductor substrate close to the source region, a region which constitutes a p-n junction with the substrate, and by connecting this latter region to the gate electrode, whereby there is caused, between said region and the source, a current due to punch-through at high gate voltage so that the breakdown of the transistor is prevented.