公开(公告)号：US3764864A

公开(公告)日：1973-10-09

申请号：US3764864D

申请日：1967-03-21

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： OKUMURA T ,  TSUCHITANI A ,  HASEGAWA T

IPC: H01L27/02 ,  H01L11/00 ,  H01L15/00

CPC classification number: H01L27/0255

Abstract: An insulated gate field-effect transistor constructed by forming, in a portion of the semiconductor substrate close to the source region, a region which constitutes a p-n junction with the substrate, and by connecting this latter region to the gate electrode, whereby there is caused, between said region and the source, a current due to punch-through at high gate voltage so that the breakdown of the transistor is prevented.

Abstract translation: 一种绝缘栅场效应晶体管，其通过在靠近源极区域的半导体衬底的一部分中形成与衬底构成pn结的区域，并将后一区域连接到栅极电极，由此产生 在所述区域和源极之间，由于在高栅极电压下穿通导致的电流，从而防止了晶体管的击穿。

公开(公告)号：SE307198B

公开(公告)日：1968-12-23

申请号：SE427067

申请日：1967-03-29

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： HASEGAWA T ,  OKUMURA T ,  TSUCHITANI A

IPC: H01L27/02 ,  H01L11/14

Abstract: An insulated gate field-effect transistor constructed by forming, in a portion of the semiconductor substrate close to the source region, a region which constitutes a p-n junction with the substrate, and by connecting this latter region to the gate electrode, whereby there is caused, between said region and the source, a current due to punch-through at high gate voltage so that the breakdown of the transistor is prevented.