-
1.发明授权Ed in the emitter pressure sensitive transistor having a schottky barrier junction form 失效在具有肖特基阻挡结构形式的发射机压力敏感晶体管中的ED
公开(公告)号：US3757176A
公开(公告)日：1973-09-04
申请号：US3757176D
申请日：1971-09-29
Applicant: MATSUSHITA ELECTRONICS CORP
CPC classification number: H04R23/006 , H01L27/0766 , H01L29/00 , Y10S148/15
Abstract: A pressure sensitive semiconductor device which has a schottky barrier junction at an electrode lead-out portion of one region of a p-n-p or n-p-n structure transistor and to which a pressure sensitive junction is formed by providing a pressure applying means to the schottky barrier junction which has a high sensitivity since it amplifies a pressure response signal by the amplifying action of the transistor.
-
2.发明授权Pressure-sensitive schottky barrier semiconductor device having a substantially non-conductive barrier for preventing undesirable reverse-leakage currents and method for making the same 失效具有用于防止不可穿透的反向泄漏电流的主要非导电障碍物的压敏肖特基二极管半导体器件及其制造方法
公开(公告)号：US3746950A
公开(公告)日：1973-07-17
申请号：US3746950D
申请日：1969-08-15
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： SAWAKI T , FUJIWARA S , HASEGAWA H , KANO G , IIZUKA M
CPC classification number: H04R23/006 , H01L29/00 , H03F1/302 , H03F1/34 , H03F3/183
Abstract: A pressure-sensitive semi-conductor device with a Schottky barrier in which a separation space is formed underneath the insulating film covering a major surface portion of the semiconductor substrate and disposed adjacent a metal layer received in a recess in the substrate and extending through an opening in the insulating film, whereby the input pressure is applied to the metal layer. The separation space is formed by side-etching with the insulating film serving as mask.
Abstract translation: 一种具有肖特基势垒的压敏半导体器件，其中在覆盖半导体衬底的主表面部分的绝缘膜的下方形成分隔空间，并且设置在容纳在衬底的凹部中的金属层附近并延伸穿过 在绝缘膜上形成开口，由此将输入压力施加到金属层。 通过用作为掩模的绝缘膜进行侧面蚀刻来形成分离空间。
-
3.发明授权Schottky barrier semiconductor device having a substantially non-conductive barrier for preventing undesirable reverse-leakage currents and method for making the same 失效具有用于防止不可穿透的反向泄漏电流的主要非导电障碍物的肖特基半导体器件及其制造方法
公开(公告)号：US3763408A
公开(公告)日：1973-10-02
申请号：US3763408D
申请日：1969-08-15
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： KANO G , IIZUKA M , SAWAKI T , FUJIWARA S , HASEGAWA H
IPC: H01L23/485 , H01L29/00 , H01L11/00 , H01L15/00
CPC classification number: H01L23/485 , H01L29/00 , H01L2924/0002 , H01L2924/00
Abstract: A semi-conductor device, such as diode transistor, field effect transistor with a Schottky barrier, has a separation space formed underneath the insulating film covering a major surface portion of the semiconductor substrate. This separation space is disposed adjacent to a metal layer accommodated in a recess in the substrate and extending through an opening in the insulating film, so as to eliminate unreasonable reverse leakage current, by effectively insulating the Schottky barrier from the electric charge accumulation layer beneath the insulating film.
Abstract translation: 诸如二极管晶体管的半导体器件，具有肖特基势垒的场效应晶体管具有形成在覆盖半导体衬底的主表面部分的绝缘膜下方的分离空间。 该分离空间与容纳在基板中的凹部中的金属层相邻设置并延伸穿过绝缘膜中的开口，以便通过有效地将肖特基势垒与电荷积累层有效地绝缘在消除不合理的反向泄漏电流 绝缘膜。
-
4.发明授权Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction 失效肖特基BARRIER压力敏感半导体器件与金属半导体接头外围空气空间
公开(公告)号：US3786320A
公开(公告)日：1974-01-15
申请号：US3786320D
申请日：1969-09-29
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： KANO G , FUJIWARA S , SAWAKI T , IIZUKA M , HASEGAWA H
Abstract: Disclosed is a pressure-sensitive transistor whose emitter or collector junction is formed by use of a Schottky barrier junction and wherein the current through the transistor changes in accordance with the applied pressure when pressure is applied to said junction by pressure applying means. Such a transistor is advantageous in that a high pressure-to-current conversion factor is obtained, little noise is generated at the junction, and the reverse leakage current appearing at the junction is extremely small.
Abstract translation: 公开了一种压敏晶体管，其发射极或集电极结通过使用肖特基势垒结形成，并且其中当压力通过压力施加装置施加到所述接合点时，通过晶体管的电流根据施加的压力而变化。 这样的晶体管的优点在于，获得高的压力 - 电流转换因子，在结处产生很少的噪声，并且在结处出现的反向泄漏电流非常小。
-
5.发明授权Schottky barrier type semiconductor device with improved backward breakdown voltage characteristic 失效具有改进背后断开电压特性的肖特基阻挡型半导体器件
公开(公告)号：US3742315A
公开(公告)日：1973-06-26
申请号：US3742315D
申请日：1971-10-18
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： KANO G , HASEGAWA H , IIZUKA M , FUJIWARA S , TERAMOTO I , IWASA H
IPC: H01L21/306 , H01L23/485 , H01L29/00 , H01L29/872 , H01L5/02 , H01L7/50 , H01L7/60
CPC classification number: H01L29/872 , H01L21/30608 , H01L23/4855 , H01L29/00 , H01L2924/0002 , Y10S148/051 , Y10S148/102 , Y10S148/115 , Y10S148/139 , H01L2924/00
Abstract: A semiconductor device having a Schottky barrier junction formed in the bottom of a polygonal recess on a surface of a semiconductor substrate comprises an undercut in the recess beneath an insulating mask formed on the substrate, and a metal passing through the mask and extending to the bottom of the recess for forming said junction. The undercut provides an enclosed spacing encircling the junction portion of said metal and said semiconductor, thereby improving the backward breakdown voltage characteristic therein.
-
Patent Agency Ranking
公开(公告)号：SE320434B
公开(公告)日：1970-02-09
申请号：SE426967
申请日：1967-03-29
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： INOUE M , TAKAYANAGI S , KANO G , MATSUNO J
Abstract: 1,173,330. Semi-conductor contacts. MATSUSHITA ELECTRONICS CORP. 14 March, 1967 [29 March, 1966], No. 11888/67. Heading H1K. [Also in Division C7] A molybdenum or tungsten ohmic contact on semi-conductor material with a surface impurity concentration of 10 18 cm. -3 or more is provided by deposition from the hydrogen reduction of a halide of the metal or thermal decomposition of a carbonyl compound of the metal on to the semi-conductor which is at 500‹ C. or less. Fig. 1 shows an N-type 70 ohm-cm. silicon wafer 2 into which phosphorus has been diffused to form N-type region 3 and, after slicing treatment, boron (from boron trioxide suspended in monomethylenestycolethyl) is diffused in to form P-type region 1. Molybdenum films 4 are then applied by supporting the slice on a pedestal 12 (Fig. 2), hydrogen being fed from pipe 17 over a tray 14 of molybdenum pentachloride at 100‹ C. through a heated mesh 19 to deposit the molybdenum film. A gold film is evaporated on to the molybdenum and a copper block 5 thermo compression bonded with a gold foil to the gold. The invention is distinguished from a similar process to provide a Schottky barrier electrode as described in Specification 1,172,230. The semi-conductor material may consist of silicon, germanium or gallium arsenide.
-
公开(公告)号：SE360772B
公开(公告)日：1973-10-01
申请号：SE1700669
申请日：1969-12-09
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： KANO G , YOKOSAWA M , KAWASAKI T , FUJIWARA S , HASEGAWA H
Abstract: In a semiconductor device with a four-layer structure having the so-called thyristor characteristic, when the control electrode for controlling its breakover voltage is constructed by the Schottky barrier and a means to apply a stress to the barrier, the breakover voltage of the said semiconductor device can be controlled by the stress. If this device is assembled in a circuit system, the circuit system can be set to either the "off" or "on" state, corresponding to the applied stress.
-
公开(公告)号：SE355110B
公开(公告)日：1973-04-02
申请号：SE1146969
申请日：1969-08-18
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： KANO G , IIZUKA M , FUJIWARA S , HASEKAWA H , SAWAKI T
IPC: H01L23/485 , H01L29/00 , H01L9/00
Abstract: A semi-conductor device, such as diode transistor, field effect transistor with a Schottky barrier, has a separation space formed underneath the insulating film covering a major surface portion of the semiconductor substrate. This separation space is disposed adjacent to a metal layer accommodated in a recess in the substrate and extending through an opening in the insulating film, so as to eliminate unreasonable reverse leakage current, by effectively insulating the Schottky barrier from the electric charge accumulation layer beneath the insulating film.
-
公开(公告)号：BR6912979D0
公开(公告)日：1973-01-11
申请号：BR21297969
申请日：1969-10-02
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： IISUKA M , FUJIWARA S , KANO G , IWASA H , HASEGAWA H , TERAMOTO I
IPC: C23F1/02 , C23F1/40 , H01L21/00 , H01L21/306 , H01L23/485 , H01L29/47 , H01L29/872 , H01L7/50
-
公开(公告)号：SE348319B
公开(公告)日：1972-08-28
申请号：SE1360369
申请日：1969-10-02
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： LIZUKA M , FUJIWARA S , KANO G , IWASA H , HASEGAWA H , TERAMOTO I
IPC: C23F1/02 , C23F1/40 , H01L21/00 , H01L21/306 , H01L23/485 , H01L29/47 , H01L29/872 , H01L7/50
-
-
-
-
-
-
-
-
-
Search Results
14
records
(took 0.023 seconds)
