公开(公告)号：MY181531A

公开(公告)日：2020-12-25

申请号：MYPI2013700121

申请日：2013-01-18

Applicant: MIMOS BERHAD

Inventor： MOHAMMAD FAIRUZ AMIR ,  MAZLIN MAN ,  MUHAMMAD RAMDZAN BUYONG ,  SHARAIFAH KAMARIAH WAN SABLI ,  AZLINA MOHD ZAIN

Abstract: In fabricating a bond pad in a semiconductor device, the silicon nitride and silicon dioxide layers are separately etched using fluorine-based plasma in a reactive ion etching process chamber. Each layer?s recipe is customized, instead of using the same recipe or parameters for both layers as conventionally practiced, so that the initial undercut structure is prevented from forming and growing into the undesirable trench on the surface of the nitride layer. Next, solvent cleaning process is done after the etching so that the unwanted polymers formed during the etching may be removed. The remaining photoresist is then removed using a microwave oxygen plasma ashing method. The last layer, TiN ARC, is then removed using a chlorine-based plasma in a reactive ion etch process chamber. Finally, the exposed metal bond pad surface is cleaned with a solvent-free cleaning agent to remove the unwanted residues and by-products from the TiN ARC etching to avoid pitting corrosion of the metal surface. Most illustrative drawing: FIGURE 5

公开(公告)号：MY185098A

公开(公告)日：2021-04-30

申请号：MYPI2014002536

申请日：2014-08-29

Applicant: MIMOS BERHAD

Inventor： MOHD ROFEI MAT HUSSIN ,  SHARAIFAH KAMARIAH WAN SABLI ,  ISKHANDAR MOHD NASIR

Abstract: The present invention relates to a method for manufacturing a large Schottky diode. Thme present invention comprising: depositing a contact etch stop layer (CESL) on top of the gate oxide and trench array structure (600); depositing (700) and planarizing (800) a pre-metal dielectric to produce flat topography on the top surface; patterning (900) and etching (1000, 1100) the dielectric layers using plasma etch method; and conducting wet etching to remove the dielectric layer completely from contact area (1200). The present invention provides a robust fabrication method of producing a large area of trench Schottky diode with better protection to the trench guard ring structure. The structure of the diode technically directly affects the reverse leakage current of the diode. Due to that, it is important to produce the diode without structure damage at guard ring area in order to reduce and stabilize reverse leakage current.