公开(公告)号：MY186247A

公开(公告)日：2021-06-30

申请号：MYUI2012005558

申请日：2012-12-21

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  MOHD ROFEI MAT HUSSIN ,  NASIMAH SAIDIN ,  WAN AZLI WAN ISMAIL ,  MOHD ISMAHADI SYONO

Abstract: The present invention relates to a multigate electrode ion sensitive filed effect transistor comprising: a semiconductor substrate (101); a channel region (103) having doped polysilicon layer (104) of at least 5e16 per cubic centimeter for conducting the current, formed over the semiconductor substrate (101); a drain region (105); a source region (107), wherein the channel region (103) is stacked between the source region (107) and the drain region (105); a gate insulating layer (109); and a sensing membrane layer (111); characterized in that the gate insulating layer (109) and the sensing membrane layer (111) are formed covering planar surfaces and the stack structure of the channel region (103), the source region (107) and the drain region (105) to create multigate electrodes.