公开(公告)号：MY173981A

公开(公告)日：2020-03-02

申请号：MYPI2010700033

申请日：2010-05-26

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN BUYONG ,  MOHSEN NABIPOOR ,  DANIEL BIEN CHIA SHENG ,  AZLINA MOHD ZAIN ,  SITI AISHAH MOHAMAD BAHARUDDIN ,  RAHIMAH MOHD SAMAN ,  ABDUL GHANI OTHAMAN

Abstract: A novel humidity sensor is described. The capacitive humidity sensor comprises at least two pairs of electrode contact pads (24) spaced apart; and a moisture sensitive film (26) formed around the electrode contact pads. The sensor is characterized in that, at least a pair of metals (28) connect the electrode contact pads to form a pair of 1-shaped electrodes of a capacitor, wherein the capacitance measured changes according to humidity. Another sensor embodiment can be formed with contact pads exposed at two side of the moisture sensitive film. A method of fabricating the sensor is also described.

公开(公告)号：MY165721A

公开(公告)日：2018-04-20

申请号：MYPI2013702270

申请日：2013-11-26

Applicant: MIMOS BERHAD

Inventor： LEE WAI YEE ,  DANIEL BIEN CHIA SHENG ,  KHAIRUL ANUAR BIN ABD WAHID ,  AMIRUL BIN ABD RASHID

IPC: B81C1/00

Abstract: A method of forming nanomaterials (10) on packaged sensor device platform, the method comprising the steps of fabricating (11) a sensor device platform on full scale wafer to form a fully packaged sensor device platform for nanomaterials forming process (10) which comprises the steps of protecting the wire bond with epoxy while leaving the sensing area exposed for receiving coating of catalyst precursor for the nanomaterial growth, nucleating (16) the coated catalyst precursor at low temperature for forming an active nanoparticle, and providing the active nanoparticle nucleation with nutrient solution for turning them into solid and forming nanostructures for integration of readout circuit for sensing. Most illustrative diagram: Figure 3

公开(公告)号：MY162299A

公开(公告)日：2017-05-31

申请号：MYPI20094402

申请日：2009-10-20

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  LEE HING WAH ,  MOHD ISMAHADI SYONO

IPC: G01N27/414

Abstract: The present invention discloses an inverted ion-sensitive field effect transistor (ISFET) (10) and method of producing thereof, wherein ISFET comprises a substrate layer ( 11) , a sensing membrane (12) on said substrate layer (11), a layer of field oxide (19) on said sensing membrane (12), doped source (13) and drain (14) regions on said layer of field oxide (19), and characterized in that-electrical contacts (16, 17) are provided to the respective source (13) and drain (14) regions on the opposing side of said sensing membrane (12) and said substrate layer (11) is windowed with an opening access ( 18) to said sensing membrane ( 12) to provide electrical isolation of the electrical contacts ( 16, 1 7) from said sensing membrane (12).

公开(公告)号：MY158780A

公开(公告)日：2016-11-15

申请号：MYPI2013701092

申请日：2013-06-25

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  LEE HING WAH ,  MOHSEN NABIPOOR ,  KHAIRUL ANUAR BIN ABDUL WAHID ,  SAAT SHUKRI BIN EMBONG

IPC: G01N27/07 ,  G01N27/22 ,  G01N27/30 ,  H01L21/027 ,  H01L29/786

Abstract: DESCRIBED HEREIN IS A METAL ELECTRODE (100) HAVING AT LEAST ONE HIGH ASPECT RATIO STRUCTURE. THE METAL ELECTRODE (100) COMPRISES A SILICON LAYER (101) HAVING THE HIGH ASPECT RATIO STRUCTURE, AN OXIDE LAYER (102) ON TOP OF THE SILICON LAYER (101), AN ADHESIVE LAYER (103) ON TOP OF THE OXIDE LAYER (102), AND A METAL LAYER (104) ON TOP OF THE ADHESIVE LAYER (103). THE THICKNESS OF THE METAL LAYER (104) IS AT LEAST 15 TIMES LESSER THAN THE HEIGHT OF THE HIGH ASPECT RATIO STRUCTURE. DUE TO THIS PARTICULAR FEATURE, THE METAL LAYER (104) IS DEPOSITED ON TOP OF THE ADHESIVE LAYER (103) IN A SELF-ALIGNED MANNER, TAKING THE SHAPE OF THE HIGH ASPECT RATIO STRUCTURE, AND DISCONNECTED AT THE WALL OF THE HIGH ASPECT RATIO STRUCTURE. FURTHER, THE METAL ELECTRODE (100) CAN BE MODIFIED ACCORDINGLY TO SUIT DIFFERENT APPLICATIONS. ALSO DESCRIBED HEREIN IS A METHOD FOR FABRICATING THE AFOREMENTIONED METAL ELECTRODE (100). BEST ILLUSTRATIVE

公开(公告)号：MY185758A

公开(公告)日：2021-06-04

申请号：MYUI2012700426

申请日：2012-07-02

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  TEH AUN SHIH ,  MUHAMAD RAMDZAN BUYONG ,  AZLINA MOHD ZAIN

IPC: G01N27/12

Abstract: A method of fabricating a gas sensor with a conductive sensing element on a microhotplate (102) is provided, the method includes the steps of fabricating a microhotplate (102) on silicon, fabricating a nanostructured sensor on the microhotplate (102) by growing of conductive nanotubes (110) or nanowires with metal catalyst and functionalising the conductive nanotubes or nanowires, wherein step the nanotubes (110) or nanowires are functionalised with metal oxides selected from a group consisting and not limited to tin oxide (SnO2), tungsten oxide (WOx), tantalum pent-oxide (Ta2O5), aluminium oxide (Al2O3) copper oxide (CuO), iron oxide (Fe2O3), titanium oxide (TiO), Neodymium Oxide (Nd2O3) and zinc oxide (ZnO). (Figure 2)

公开(公告)号：MY178129A

公开(公告)日：2020-10-05

申请号：MYPI2010700079

申请日：2010-10-29

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  RAHIMAH MOHD SAMAN ,  SITI AISHAH MOHAMAD BADARUDDIN ,  AZLINA MOHD ZAIN ,  MUHAMAD RAMDZAN BUYONG ,  MOHAMAD FAIRUZ AMIR

Abstract: The present invention provides an ISFET sensor device and a method to fabricate the ISFET sensor device with nanostructured membrane which will improve the sensitivity and efficiency of the device. The nanostructures can be in unlimited shape or design, in the form of nanowires, nanorings or nanoparticles, fabricated with the function to increase the sensor sensitivity by increasing the surface area of the membrane exposed to the sample solution or electrolyte. The nanostructured membrane can be formed either by nanofabrication techniques which includes lithographic patterning, pattern transfer, thin film deposition and etching methods or by spin coating of nanomaterials and nanowires using various materials, not limited to, such as, Si3N4 [32], polysilicon [34] and metallic nanowires.

公开(公告)号：MY177552A

公开(公告)日：2020-09-18

申请号：MYPI2012701100

申请日：2012-12-07

Applicant: MIMOS BERHAD

Inventor： LEE HING WAH ,  DANIEL BIEN CHIA SHENG ,  TEH AUN SHIH ,  LEE WAI YEE ,  KHAIRUL ANUAR ABD WAHID

Abstract: A method of fabricating a resistive gas sensor device is provided, the method includes the steps of, depositing an insulating layer (105) on a silicon substrate layer (101) and depositing a conductive metal layer (103) onto the insulating layer (105), characterized in that, the method further includes the steps of depositing a thin metallic catalyst layer (107) covering a surface of the conductive metal layer (103) and etching the metal catalyst layer (107) and growing nanostructures (109) from the metal catalyst layer (107) that is exposed, such that the nanostructures (109) are interconnected with each other and the conductive metal layer (103).

公开(公告)号：MY177026A

公开(公告)日：2020-09-02

申请号：MYPI2010004254

申请日：2010-09-09

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG

Abstract: The present invention provides a method (200) of fabricating a fluidic device (100) having one or more nano-sized channels. The method comprises etching (204) a silicon-based substrate (102) to form one or more channels (110) of the desire shape and configuration; oxidizing (206) the etched silicon-based substrate to grow a layer of silicon dioxide to miniaturize the one or more channels (110); encapsulating (210) the one or more miniaturized channels with another substrate. A fluidic device (100) fabricated by the aforementioned method (200) is also provided.

公开(公告)号：MY174926A

公开(公告)日：2020-05-22

申请号：MYPI2010700093

申请日：2010-12-10

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  LEE HING WAH

Abstract: The present invention provides a chemo-resistive gas sensor in 5 which consists of two chemo-resistive sensor elements [16, 36] placed on both sides of a micro-hotplate array [26]. It is capable of providing lower power consumption compared to existing one-side sensing membrane gas sensor. An embodiment of the invention has the two sensor elements to be of same material to increase the sensitivity of the device. Another embodiment of the invention has two sensor elements of different material to allow different gas to be monitored. The proposed two membranes may be arranged to provide multiple gas solution for remote application and device miniaturization. Figure 1

公开(公告)号：MY172121A

公开(公告)日：2019-11-14

申请号：MYUI2013001818

申请日：2013-05-17

Applicant: MIMOS BERHAD

Inventor： LEE WAI YEE ,  DANIEL BIEN CHIA SHENG ,  MOHSEN NABIPOOR ,  SURAYA BINTI SULAIMAN

IPC: G01N27/22

Abstract: The present invention relates to a capacitive humidity sensor (100) comprising: a semiconductor substrate (101); an insulating layer (103) rests on the semiconductor substrate (101); a sensing membrane (105); a plurality of interdigitated electrodes (107); and a plurality of electrode contacts (109); characterised in that the present invention having ground plane connections (111) and the interdigitated electrodes (107) are sandwiched by the sensing membrane (105). The ground plane connections (111) and the sandwiching sensing membrane (105) are configured to eliminate stray capacitance and to provide optimal utilisation of fringing field effect respectively.