VALVELESS MICROPUMP
    1.
    发明专利

    公开(公告)号:MY170998A

    公开(公告)日:2019-09-23

    申请号:MYPI20085246

    申请日:2008-12-23

    Applicant: MIMOS BERHAD

    Abstract: The present invention provides a valveless micropump (100) comprises an inlet (110) and. an outlet ( 112); a reservoir (120) positioned between the inlet ( 110) and the outlet (112), the reservoir (120) having a chamber (130) defined therein, and the inlet (110) and the outlet (112) having a fluid communication with the chamber (130) through a respective diffuser (106, 108) serving as the valveless feature; and a fluid driving means defines at the reservoir (120), the fluid driving means operably drives fluid from the inlet (100) to the outlet (112) through the diffuser (106), the chamber (130) and the diffuser (108) accordingly.

    FULLY INTEGRATED ISFET - VALVELESS MICROPUMP

    公开(公告)号:MY178352A

    公开(公告)日:2020-10-08

    申请号:MYPI20071674

    申请日:2007-10-01

    Applicant: MIMOS BERHAD

    Abstract: The present invention relates to a fully integrated ISFET valveless micropump for use as a pH sensor and as a chemical based sensor especially intended for Wireless Sensor Network (WSN) characterized in that wherein the valveless pump with ISFET is embedded along a pump channel and temperature sensors at its inlet and wherein a membrane in the middle is the pump diaphragm and is electrostatically actuated by an electrode above it which deposited on the glass and wherein when the membrane controlled by a microcontroller is in motion, fluid or gas would be pumped in thru the inlet and travels thru the channel where ISFET is located and out thru the outlet.

    MICROELECTRODE AND METHOD OF FABRICATION THEREOF

    公开(公告)号:MY164429A

    公开(公告)日:2017-12-15

    申请号:MYPI2013700767

    申请日:2013-05-10

    Applicant: MIMOS BERHAD

    Abstract: THE PRESENT INVENTION DISCLOSES A MICROELECTRODE PRECURSOR (100) COMPRISING A HOLLOW CONTAINER (101); A METAL WIRE (102) WITH A MICRO-DIAMETER FOR CONDUCTING ELECTRICITY POSITIONED IN THE CENTER OF THE HOLLOW CONTAINER (101) AND PARALLEL TO THE LENGTH OF THE HOLLOW CONTAINER (101); AT LEAST ONE LAYER OF SOLUBLE MATERIAL (103) FOR SEALING THE METAL WIRE (102); AT LEAST ONE LAYER OF SEALING MATERIAL (104) FOR SECURING THE POSITION OF THE METAL WIRE (102) WITHIN THE HOLLOW CONTAINER (101); AND A WIRE CONNECTOR (105) CONNECTED TO THE METAL WIRE (102) AT ONE END OF THE MICROELECTRODE PRECURSOR (100) FOR CONNECTING THE MICROELECTRODE PRECURSOR (100) TO EXTERNAL DEVICES. FURTHER, IT IS DETAILED HEREIN MODIFICATIONS MADE TO THE MICROELECTRODE PRECURSOR (100), CONVERTING THE MICROELECTRODE PRECURSOR (100) INTO EITHER A MICRO-WIRE TYPE MICROELECTRODE OR A MICRO-DISK TYPE MICROELECTRODE. ALSO, IT IS PRESENTED HEREIN A METHOD FOR FABRICATING THE AFOREMENTIONED MICROELECTRODE PRECURSOR (100). BEST ILLUSTRATIVE

    INVERTED ISFET AND METHOD OF PRODUCING THEREOF

    公开(公告)号:MY162299A

    公开(公告)日:2017-05-31

    申请号:MYPI20094402

    申请日:2009-10-20

    Applicant: MIMOS BERHAD

    Abstract: The present invention discloses an inverted ion-sensitive field effect transistor (ISFET) (10) and method of producing thereof, wherein ISFET comprises a substrate layer ( 11) , a sensing membrane (12) on said substrate layer (11), a layer of field oxide (19) on said sensing membrane (12), doped source (13) and drain (14) regions on said layer of field oxide (19), and characterized in that-electrical contacts (16, 17) are provided to the respective source (13) and drain (14) regions on the opposing side of said sensing membrane (12) and said substrate layer (11) is windowed with an opening access ( 18) to said sensing membrane ( 12) to provide electrical isolation of the electrical contacts ( 16, 1 7) from said sensing membrane (12).

    AN ION SENSITIVE FIELD EFFECT TRANSISTOR

    公开(公告)号:MY186247A

    公开(公告)日:2021-06-30

    申请号:MYUI2012005558

    申请日:2012-12-21

    Applicant: MIMOS BERHAD

    Abstract: The present invention relates to a multigate electrode ion sensitive filed effect transistor comprising: a semiconductor substrate (101); a channel region (103) having doped polysilicon layer (104) of at least 5e16 per cubic centimeter for conducting the current, formed over the semiconductor substrate (101); a drain region (105); a source region (107), wherein the channel region (103) is stacked between the source region (107) and the drain region (105); a gate insulating layer (109); and a sensing membrane layer (111); characterized in that the gate insulating layer (109) and the sensing membrane layer (111) are formed covering planar surfaces and the stack structure of the channel region (103), the source region (107) and the drain region (105) to create multigate electrodes.

    A METHOD OF PREPARING GRAPHENE OXIDE PATTERNS ON AWAFER-SCALE LEVEL

    公开(公告)号:MY179655A

    公开(公告)日:2020-11-11

    申请号:MYPI2016002288

    申请日:2016-12-22

    Applicant: MIMOS BERHAD

    Abstract: A process of preparing graphene oxide patterns includes the steps of depositing graphene oxide onto an insulating wafer to form a graphene oxide sheets, deoxygenating the graphene oxide sheets to form deoxygenated graphene oxide sheets, coating a photoresist layer on the deoxygenated graphene oxide sheets to form photoresist coated deoxygenated graphene oxide sheets, curing the photoresist coated deoxygenated graphene oxide sheets to form cured photoresist coated deoxygenated graphene oxide sheets, exposing the cured photoresist coated deoxygenated graphene oxide sheets to UV to form UV exposed photoresist coated deoxygenated graphene oxide sheets, creating a mask on the UV exposed photoresist coated deoxygenated graphene oxide sheets by developing the photoresist layer in a developer solution to form exposed region, etching the exposed region of the deoxygenated graphene oxide sheets using plasma source to produce graphene oxide patterns, and removing remaining photoresist layer by dissolving the deoxygenated graphene oxide sheets in an organic solvent to obtain the insulating wafer with graphene oxide patterns Figure 2

    A PIEZORESISTIVE ACCELEROMETER
    8.
    发明专利

    公开(公告)号:MY164500A

    公开(公告)日:2017-12-29

    申请号:MYPI2011003449

    申请日:2011-07-25

    Applicant: MIMOS BERHAD

    Abstract: DISCLOSED IS A FORCE-BALANCED PIEZORESISTIVE 3-AXIS ACCELEROMETER. AN EXEMPLARY ACCELEROMETER (100) COMPRISES A PROOF MASS (104) WHICH IS COUPLED TO A PLURALITY OF MEANDERS (103), WHICH FURTHER COUPLE TO A PLURALITY OF ANCHOR PADS (102) THAT EXTENDS OUT FROM EACH MEANDER (103). THE PROOF MASS (104), MEANDERS (103) AND ANCHOR PADS (102) ARE INTEGRALLY FABRICATED MULTILAYER CONSTRUCT WHICH COMPRISES A BASE SILICON LAYER (201), INSULATOR 1 (202), INSULATOR 2 (204), METAL 1 (203) AND METAL 2 (205) ARRANGED IN AN INTERMITTENT FASHION AND FABRICATED THROUGH CMOS COMPATIBLE FABRICATION PROCESS. PIEZORESISTIVE SENSING MEANS IS USED IN DETECTING ACCELERATION IN THREE DEGREE OF FREEDOMS OR DIRECTIONS IN WHICH PIEZORESISTORS (206) EMBEDDED WITHIN THE MULTILAYER CONSTRUCT ARE USED TO SENSE THE MOVEMENT OF PROOF MASS (104) AND MEANDERS (103) UPON EXTERNAL FORCE WHICH EXERTED ON THE PROOF MASS (104). ELECTRICAL SIGNALS UPON THE SENSING ARE THEN GENERATED AND PROCESSED BY ELECTRICAL CIRCUITRY TO PROVIDE DC BIASING ON RESPECTIVE ANCHOR PADS (102) TO PRODUCE X-, Y- AND Z-DIRECTION ACCELERATION DATA IN TERMS OF MAGNITUDE AND DIRECTION. THE ACCELEROMETER IS ALSO DESIGNED WITH SELF-TEST CAPABILITY IN WHICH THE MEANDERS (103) PERFORM SELF-TEST BY BENDING AT LEAST ONE MEANDER WHILE KEEPING OTHER MEANDERS STATIONARY AND MEASURING Z-DISPLACEMENT. THE RESULTING ACCELEROMETER HAS THE POTENTIAL FOR LOW POWER CONSUMPTION DUE TO DC BIASING, LOW COST AND HIGH-ACCURACY OPERATION OVER WIDE TEMPERATURE RANGE DUE TO ADDITIONAL WHEATSTONE BRIDGE CIRCUIT EMBEDDED WITHIN THE MULTILAYER CONSTRUCT. (MOST ILLUSTRATED BY

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