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公开(公告)号：AU2003297714A1
公开(公告)日：2004-06-30
申请号：AU2003297714
申请日：2003-12-09
Applicant: PIXELLIGENT TECHNOLOGIES LLC , FLEET ERIN F , GONEN SERPIL , COOPER GREGORY D
Inventor： FLEET ERIN F , GONEN SERPIL , COOPER GREGORY D , CHEN ZHIYUN
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2.发明申请
公开(公告)号：WO2005029180A3
公开(公告)日：2006-02-02
申请号：PCT/US2004006443
申请日：2004-03-04
Applicant: PIXELLIGENT TECHNOLOGIES LLC , CHEN ZHIYUN , FLEET ERIN F , COOPER GREGORY
Inventor： CHEN ZHIYUN , FLEET ERIN F , COOPER GREGORY
IPC: G03F20060101 , G03F1/00 , H01L21/027 , G03F7/00 , G03F7/04 , G03F7/26 , G03F9/00
CPC classification number: G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing mateirals as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
Abstract translation: 半导体纳米尺寸颗粒具有独特的光学性质，使其成为UV光刻技术中各种应用的理想选择。 在该专利中，描述了包括使用半导体纳米尺寸颗粒或半导体纳米尺寸颗粒在浸没式光刻中作为高折射介质的半导体纳米尺寸颗粒，作为光学中的抗反射涂层，光刻中的防护薄膜和UV光致抗蚀剂中的敏化剂 。
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Patent Agency Ranking
公开(公告)号：WO2008008275A3
公开(公告)日：2008-08-14
申请号：PCT/US2007015539
申请日：2007-07-06
Applicant: PIXELLIGENT TECHNOLOGIES LLC , COOPER GREGORY D , CHEN ZHIYUN , SERPIL GONEN WILLIAMS , THOMPSON LARRY F
Inventor： COOPER GREGORY D , CHEN ZHIYUN , SERPIL GONEN WILLIAMS , THOMPSON LARRY F
IPC: G03B27/54
CPC classification number: G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
Abstract: New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
Abstract translation: 在本公开中描述了涉及使用两步技术来为光刻提供非线性抗蚀剂的涉及多步可逆光化学反应的新路线。 他们可能会根据光线强度提供二次曝光。 还描述了几个具体的例子，包括但不限于使用纳米晶体。 结合双重图案化，这些方法可能会产生亚衍射极限特征密度。
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4.发明申请PROGRAMMABLE PHOTOLITHOGRAPHIC MASK BASED ON NANO-SIZED SEMICONDUCTOR PARTICLES 审中-公开基于纳米尺寸半导体颗粒的可编程光刻掩模
公开(公告)号：WO2004053938A3
公开(公告)日：2005-04-28
申请号：PCT/US0338894
申请日：2003-12-09
Applicant: PIXELLIGENT TECHNOLOGIES LLC , CHEN ZHIYUN , FLEET ERIN F , GONEN SERPIL , COOPER GREGORY D
Inventor： CHEN ZHIYUN , FLEET ERIN F , GONEN SERPIL , COOPER GREGORY D
CPC classification number: G03F7/70383 , B82Y20/00 , G02F1/0126 , G02F1/015 , G02F1/01716 , G02F2202/36 , G02F2203/12 , G03F7/70291 , Y10S430/146 , Y10S977/932 , Y10T428/24802 , Y10T428/24893
Abstract: Semiconductor nano-particles, due to their specific physical properties, can be used as optical modulator and reversible photo-bleachable materials for a wide spectrum, from far infrared to deep U.V. In this patent, nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography. Other applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.
Abstract translation: 半导体纳米颗粒由于其特定的物理特性，可用作光谱调制器和可逆光可漂白材料，用于广谱，从远红外到深紫外。 在该专利中，纳米颗粒设置有控制电路以形成可编程掩模。 纳米颗粒的光学特性改变以提供图案化的光。 这种图案化的光可以用于例如在半导体晶片上曝光用于光刻的光致抗蚀剂。 其他应用包括光学光刻中的可逆对比度增强层（R-CEL），光刻掩模检查和写入以及光存储技术。
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公开(公告)号：EP2047332A4
公开(公告)日：2009-11-18
申请号：EP07796704
申请日：2007-07-06
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor： COOPER GREGORY D , CHEN ZHIYUN , SERPIL GONEN WILLIAMS , THOMPSON LARRY F
CPC classification number: G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
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6.发明公开PROGRAMMABLE PHOTOLITHOGRAPHIC MASK AND REVERSIBLE PHOTO-BLEACHABLE MATERIALS BASED ON NANO-SIZED SEMICONDUCTOR PARTICLES AND THEIR APPLICATIONS 审中-公开对纳米MAJOR半导体粒子基和可编程光刻掩模和可逆PHOTO漂白的材料及其用途
公开(公告)号：EP1576419A4
公开(公告)日：2006-07-12
申请号：EP03796779
申请日：2003-12-09
Applicant: PIXELLIGENT TECHNOLOGIES LLC , FLEET ERIN F , GONEN SERPIL , COOPER GREGORY D
Inventor： CHEN ZHIYUN , FLEET ERIN F , GONEN SERPIL , COOPER GREGORY D
CPC classification number: G03F7/70383 , B82Y20/00 , G02F1/0126 , G02F1/015 , G02F1/01716 , G02F2202/36 , G02F2203/12 , G03F7/70291 , Y10S430/146 , Y10S977/932 , Y10T428/24802 , Y10T428/24893
Abstract: Semiconductor nano-particles, due to their specific physical properties, can be used as optical modulator and reversible photo-bleachable materials for a wide spectrum, from far infrared to deep U.V. In this patent, nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography. Other applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.
Abstract translation: 半导体纳米粒子，由于其特定的物理性质，可以用作可逆光漂白的材料的宽光谱，从远红外到远紫外线。 应用包括在光学光刻可逆反差增强层（R-CEL），光刻掩模检查和写入和光存储技术。
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7.发明公开
公开(公告)号：EP1606670A4
公开(公告)日：2009-08-05
申请号：EP04809308
申请日：2004-03-04
Applicant: PIXELLIGENT TECHNOLOGIES LLC
Inventor： CHEN ZHIYUN , FLEET ERIN F , COOPER GREGORY
IPC: G03F7/20 , G03F20060101 , G03F1/00 , G03F1/14 , G03F7/004 , G03F7/09 , H01L21/027
CPC classification number: G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing mateirals as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
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