公开(公告)号：WO2011119379A3

公开(公告)日：2012-01-05

申请号：PCT/US2011028549

申请日：2011-03-15

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  TAO YI ,  ZHONG FAN ,  SASAGAWA TERUO

Inventor： TAO YI ,  ZHONG FAN ,  SASAGAWA TERUO

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/047 ,  G02B5/284 ,  G02B26/001 ,  G09G3/3466

Abstract: Mechanical layers and methods of shaping mechanical layers are disclosed. In one embodiment, a method includes depositing a support layer (85), a sacrificial layer (84) and a mechanical layer (34) over a substrate (20), and forming a support post (60) from the support layer. A kink (90) is formed adjacent to the support post in the mechanical layer. The kink comprises a rising edge (91) and a falling edge (92), and the kink is configured to control the shaping and curvature of the mechanical layer upon removal of the sacrificial layer.

Abstract translation: 公开了机械层和机械层成型方法。 在一个实施例中，一种方法包括在衬底（20）上沉积支撑层（85），牺牲层（84）和机械层（34），以及从支撑层形成支撑柱（60）。 在机械层中邻近支撑柱形成扭结（90）。 扭结包括上升沿（91）和下降缘（92），并且扭结构造成在去除牺牲层时控制机械层的成形和曲率。

公开(公告)号：WO2009036215A8

公开(公告)日：2009-08-20

申请号：PCT/US2008076077

申请日：2008-09-11

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  YAN XIAOMING ,  HO CHOK ,  HEALD DAVID ,  GOUSEV EVGENI ,  HERTZLER BENJAMIN W ,  FLOYD PHILIP ,  SASAGAWA TERUO ,  LONDERGAN ANA ,  BITA ION ,  ZION TODD

Inventor： YAN XIAOMING ,  HO CHOK ,  HEALD DAVID ,  GOUSEV EVGENI ,  HERTZLER BENJAMIN W ,  FLOYD PHILIP ,  SASAGAWA TERUO ,  LONDERGAN ANA ,  BITA ION ,  ZION TODD

IPC: H01L21/311 ,  B01D53/68 ,  H01L21/3213

CPC classification number: H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

Abstract: A method of fabricating an electromechanical device which comprises a step of etching a sacrificial layer with an etchant comprising a noble gas fluoride, e.g. xenon difluoride (XeF2). The efficiency of the etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

Abstract translation: 一种制造机电装置的方法，其包括用包括惰性气体氟化物的蚀刻剂蚀刻牺牲层的步骤，例如， 氙二氟化物（XeF2）。 可以以各种方式提高蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。 未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。 蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。 蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。 蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

公开(公告)号：WO2012067826A3

公开(公告)日：2012-08-23

申请号：PCT/US2011058983

申请日：2011-11-02

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  BITA ION ,  LI KEBIN ,  RAO RASHMI ,  SASAGAWA TERUO ,  ARBUCKLE BRIAN W ,  CUMMINGS WILLIAM

Inventor： BITA ION ,  LI KEBIN ,  RAO RASHMI ,  SASAGAWA TERUO ,  ARBUCKLE BRIAN W ,  CUMMINGS WILLIAM

IPC: G02B6/00 ,  F21V8/00

CPC classification number: G02B26/001 ,  G02B6/005 ,  Y10T29/49826

Abstract: This disclosure provides systems, methods and apparatus for providing illumination by using a light guide (120) to distribute light. In one aspect, a passivation layer (110) is attached to the light guide of an illumination device. The passivation layer may be an optically transparent moisture barrier and may have a thickness and refractive index which allows it to function as an anti - reflective coating. The passivation layer may protect moisture - sensitive underlying features, such as metallized light turning features (140) that may be present in the light guide. The light turning features may be configured to redirect light out of the light guide. In some implementations, the redirected light may be applied to illuminate a display.

Abstract translation: 本公开提供了通过使用光导（120）分配光来提供照明的系统，方法和装置。 在一个方面，钝化层（110）附接到照明装置的光导。 钝化层可以是光学透明的水分屏障，并且可以具有允许其用作抗反射涂层的厚度和折射率。 钝化层可以保护湿气敏感的底层特征，例如可能存在于光导中的金属化的光转动特征（140）。 光转向特征可以被配置为将光重定向到光导中。 在一些实施方案中，可以应用重定向的光来照亮显示器。

公开(公告)号：WO2009036215A3

公开(公告)日：2009-06-11

申请号：PCT/US2008076077

申请日：2008-09-11

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  YAN XIAOMING ,  HO CHOK ,  HEALD DAVID ,  GOUSEV EVGENI ,  HERTZLER BENJAMIN W ,  FLOYD PHILIP ,  SASAGAWA TERUO ,  LONDERGAN ANA ,  BITA ION ,  ZION TODD

Inventor： YAN XIAOMING ,  HO CHOK ,  HEALD DAVID ,  GOUSEV EVGENI ,  HERTZLER BENJAMIN W ,  FLOYD PHILIP ,  SASAGAWA TERUO ,  LONDERGAN ANA ,  BITA ION ,  ZION TODD

IPC: H01L21/311 ,  B01D53/68 ,  H01L21/3213

CPC classification number: H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

Abstract: A method of fabricating an electonic device which comprises a step of etching a sacrificial layer with an etchant comprising a noble gas fluoride, e.g. Xenon Fluoride (Xe F2). The efficiency of the etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

Abstract translation: 一种制造电子器件的方法，其包括用包含惰性气体氟化物的蚀刻剂蚀刻牺牲层的步骤，例如， 氟化氙（Xe F2）。 可以以各种方式提高蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。 未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。 蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。 蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。 蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

公开(公告)号：WO2012177488A3

公开(公告)日：2013-03-14

申请号：PCT/US2012042495

申请日：2012-06-14

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  SASAGAWA TERUO

Inventor： SASAGAWA TERUO

IPC: B81B7/00

CPC classification number: B81B7/0058 ,  B81C2203/0109 ,  B81C2203/0118

Abstract: This disclosure provides systems, methods and apparatus for a MEMS device. In one aspect, an electromechanical systems apparatus includes a substrate, a stationary electrode positioned over the substrate, a movable electrode spaced from the stationary electrode by a gap, and at least one support structure extending above the movable electrode. The support structure includes an inorganic dielectric layer and a polymer layer.

Abstract translation: 本公开提供了用于MEMS器件的系统，方法和装置。 一方面，机电系统装置包括基板，位于基板上方的固定电极，通过间隙与固定电极隔开的可动电极以及在可动电极上方延伸的至少一个支撑结构。 支撑结构包括无机介电层和聚合物层。

公开(公告)号：WO2013019425A3

公开(公告)日：2013-04-04

申请号：PCT/US2012047439

申请日：2012-07-19

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  SASAGAWA TERUO

Inventor： SASAGAWA TERUO

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/3244 ,  H01J37/32477

Abstract: This disclosure provides systems, methods and apparatus for fabricating electromechanical system devices within a plasma-etch reaction chamber. In one aspect, a plasma-etch system includes a plasma-etch reaction chamber, an inlet in fluid communication with the reaction chamber, a cathode positioned within the reaction chamber and a non-hollow anode positioned within the reaction chamber between the inlet and the cathode. The inlet is configured to introduce a process gas into the reaction chamber such that at least a portion of the process gas strikes an upper surface of the anode and is allowed to flow across the upper surface and around the edges of the anode. The anode can be a liner plate in place of a showerhead.

Abstract translation: 本公开提供了用于在等离子体蚀刻反应室内制造机电系统装置的系统，方法和装置。 在一个方面，等离子体蚀刻系统包括等离子体蚀刻反应室，与反应室流体连通的入口，位于反应室内的阴极和位于入口和入口之间的反应室内的非空心阳极 阴极。 入口构造成将工艺气体引入反应室，使得至少一部分工艺气体撞击阳极的上表面并允许流过阳极的上表面和周围。 阳极可以是衬板代替喷头。

公开(公告)号：WO2009020801A2

公开(公告)日：2009-02-12

申请号：PCT/US2008071498

申请日：2008-07-29

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  SASAGAWA TERUO

Inventor： SASAGAWA TERUO

IPC: B81B7/00

CPC classification number: B81B7/0006 ,  B81B2201/047

Abstract: A microelectromechanical systems (MEMS) device includes a substrate (20), an array region (ARRAY), and a peripheral region (INTERCONNECT). The array region (ARRAY) includes a lower electrode (16A, 16B), a movable upper electrode (14), and a cavity (19) between the lower electrode (16A, 16B) and the upper electrode (14). The peripheral region (INTERCONNECT) includes a portion of a layer forming the upper electrode (14) in the array region (ARRAY) and an electrical interconnect (58). The electrical interconnect (58) includes a conductive material (50) electrically connected to at least one of the lower electrode (16A, 16B) and the upper electrode (14). The electrical interconnect (58) is formed of a layer separate from and below the layer forming the upper electrode (14) in the array region (ARRAY). The conductive material (50) is selected from the group consisting of nickel, chromium, copper, and silver.

Abstract translation: 微机电系统（MEMS）器件包括衬底（20），阵列区（ARRAY）和外围区（INTERCONNECT）。 阵列区域（ARRAY）包括下电极（16A，16B），可动上电极（14）以及下电极（16A，16B）和上电极（14）之间的空腔（19）。 外围区域（INTERCONNECT）包括在阵列区域（ARRAY）中形成上电极（14）的层的一部分和电互连（58）。 电互连（58）包括电连接到下电极（16A，16B）和上电极（14）中的至少一个的导电材料（50）。 电互连（58）由在阵列区域（ARRAY）中与形成上电极（14）的层分开且在其下方的层形成。 导电材料（50）选自由镍，铬，铜和银组成的组。

公开(公告)号：WO2007120886A3

公开(公告)日：2008-05-22

申请号：PCT/US2007009274

申请日：2007-04-12

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  SASAGAWA TERUO ,  KOGUT LIOR

Inventor： SASAGAWA TERUO ,  KOGUT LIOR

IPC: B81B3/00 ,  G02B26/00

CPC classification number: B81B3/001 ,  B81B2201/047 ,  B81C2201/0115 ,  G02B26/001

Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator 80 that includes a transparent electrode 81 having a first surface 81a; and a movable reflective electrode 82 with a second surface 82a facing the first surface 81a. The movable reflective electrode 82 is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer 83 which has a porous surface 83a. The porous surface 83a, in the actuated position, decreases contact area between the electrodes 81 and 82, thus reducing stiction.

Abstract translation: 公开了一种利用多孔电极表面降低静摩擦力的微机电装置（MEMS）。 在一个实施例中，微机电装置是干涉式调制器80，其包括具有第一表面81a的透明电极81; 以及具有面向第一表面81a的第二表面82a的可移动反射电极82。 可移动反射电极82可在松弛和致动（折叠）位置之间移动。 在第一或第二表面上提供铝层。 然后将铝层阳极氧化以提供具有多孔表面83a的氧化铝层83。 处于致动位置的多孔表面83a减小了电极81和82之间的接触面积，从而减小了静电。

公开(公告)号：JP2012161913A

公开(公告)日：2012-08-30

申请号：JP2012031420

申请日：2012-02-16

Applicant: Qualcomm Mems Technologies Inc ,  クォルコム・メムズ・テクノロジーズ・インコーポレーテッド

Inventor： QUI CHENGBIN ,  SASAGAWA TERUO ,  TUNG MING-HAU ,  WANG CHUN-MING ,  ZEE STEPHEN

IPC: B81C1/00 ,  B81B3/00 ,  G02B26/06

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming layers within a MEMS device to achieve a tapered edge.SOLUTION: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask and the mask layer is removed, thereby leaving a structure having tapered edges.

Abstract translation: 要解决的问题：提供一种在MEMS器件内形成层以实现锥形边缘的方法。 解决方案：某些MEMS器件包括图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角的孔的剥离掩模，使得可以在剥离掩模上沉积层并且去除掩模层，从而留下具有渐缩边缘的结构。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012030362A

公开(公告)日：2012-02-16

申请号：JP2011237032

申请日：2011-10-28

Applicant: Qualcomm Mems Technologies Inc ,  クォルコム・メムズ・テクノロジーズ・インコーポレーテッド

Inventor： CHUI CLARENCE ,  CHUN WON SUK ,  GANTI SURYA PRAKASH ,  KOTHARI MANISH ,  MILES MARK W ,  SAMPSELL JEFFREY B ,  SASAGAWA TERUO

IPC: B81C1/00 ,  B81B3/00 ,  G02B26/06

CPC classification number: G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

Abstract: PROBLEM TO BE SOLVED: To provide a MEMS device having a support structure and a method of fabricating the same.SOLUTION: Embodiments of MEMS devices includes a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

Abstract translation: 要解决的问题：提供一种具有支撑结构的MEMS器件及其制造方法。 解决方案：MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或通过凹陷中的柱支撑 导电可移动层。 在某些实施例中，铆钉结构的部分延伸穿过可移动层并接触下面的层。 在其他实施例中，用于形成刚性支撑结构的材料也可以用于钝化与MEMS装置电连接的其它暴露的电引线，保护电引线免受损坏或其他干扰。 版权所有（C）2012，JPO＆INPIT