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19 records (took 0.019 seconds)

    1.
    发明专利
    未知

    公开(公告)号：NO995731L

    公开(公告)日：2000-01-21

    申请号：NO995731

    申请日：1999-11-22

    Applicant: SEXTANT AVIONIQUE

    Inventor： LEFORT OLIVIER ,  THOMAS ISABELLE

    IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/00 ,  G01P15/02 ,  G01L1/04

    Abstract: A process for the production of microsensors machined in silicon, and in particular accelerometers for applications of assisting with navigation in aircraft, and pressure sensors. In order to improve the production of certain active parts of the sensor, and in particular of a beam forming a resonator, which needs to have well-controlled width and thickness characteristics, the following procedure is adopted. A beam having a thickness equal to the desired final thickness, and a width greater than the desired final width, is produced by micromachining the silicon on a first plate, the beam being covered on its upper face by a mask defining the desired final width. The plate is assembled with another plate. The two faces of the beam are oxidized in order to cover them with a thin protective layer. The thin protective layer on the upper face is removed, by vertical directional etching, without removing the mask already present. The silicon in the area exposed by the preceding operation is attacked by a vertical directional etch on the upper face, until the entire part of the beam not protected by the mask is eliminated, and the beam having the desired width is thus formed.

    3.
    发明专利
    未知

    公开(公告)号：NO982667D0

    公开(公告)日：1998-06-10

    申请号：NO982667

    申请日：1998-06-10

    Applicant: SEXTANT AVIONIQUE

    Inventor： LEFORT OLIVIER ,  PEDRAZA-RAMOS SYLVIE ,  PRESSET RENU ,  GIROUD PIERRE

    IPC: G01P15/08 ,  G01P15/12 ,  G01P15/13 ,  G01P15/18 ,  H01L29/84 ,  G01P

    Abstract: PCT No. PCT/FR96/01968 Sec. 371 Date Jul. 30, 1998 Sec. 102(e) Date Jul. 30, 1998 PCT Filed Dec. 10, 1996 PCT Pub. No. WO97/22010 PCT Pub. Date Jun. 19, 1997An accelerometer based on monocrystalline silicon. A moving mass is connected to a fixed frame by suspension arms. The sensor is produced in the stack of two silicon wafers in which stop and counter-stop functions are produced so as to limit the amplitude of the movements of the moving mass.

    4.
    发明专利
    未知

    公开(公告)号：FR2742230B1

    公开(公告)日：1998-01-09

    申请号：FR9514686

    申请日：1995-12-12

    Applicant: SEXTANT AVIONIQUE

    Inventor： LEFORT OLIVIER ,  PEDRAZA RAMOS SYLVIE ,  PRESSET RENE ,  GIROUD PIERRE

    IPC: G01P15/08 ,  G01P15/12 ,  G01P15/13 ,  G01P15/18 ,  H01L29/84 ,  G01P15/09

    Abstract: PCT No. PCT/FR96/01968 Sec. 371 Date Jul. 30, 1998 Sec. 102(e) Date Jul. 30, 1998 PCT Filed Dec. 10, 1996 PCT Pub. No. WO97/22010 PCT Pub. Date Jun. 19, 1997An accelerometer based on monocrystalline silicon. A moving mass is connected to a fixed frame by suspension arms. The sensor is produced in the stack of two silicon wafers in which stop and counter-stop functions are produced so as to limit the amplitude of the movements of the moving mass.

    6.
    发明专利
    未知

    公开(公告)号：FR2763745B1

    公开(公告)日：1999-08-27

    申请号：FR9706333

    申请日：1997-05-23

    Applicant: SEXTANT AVIONIQUE

    Inventor： LEFORT OLIVIER ,  THOMAS ISABELLE

    IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L49/00

    Abstract: A process for the production of microsensors machined in silicon, and in particular accelerometers for applications of assisting with navigation in aircraft, and pressure sensors. In order to improve the production of certain active parts of the sensor, and in particular of a beam forming a resonator, which needs to have well-controlled width and thickness characteristics, the following procedure is adopted. A beam having a thickness equal to the desired final thickness, and a width greater than the desired final width, is produced by micromachining the silicon on a first plate, the beam being covered on its upper face by a mask defining the desired final width. The plate is assembled with another plate. The two faces of the beam are oxidized in order to cover them with a thin protective layer. The thin protective layer on the upper face is removed, by vertical directional etching, without removing the mask already present. The silicon in the area exposed by the preceding operation is attacked by a vertical directional etch on the upper face, until the entire part of the beam not protected by the mask is eliminated, and the beam having the desired width is thus formed.

    8.
    发明专利
    未知

    公开(公告)号：BR9612776A

    公开(公告)日：2001-01-02

    申请号：BR9612776

    申请日：1996-12-10

    Applicant: SEXTANT AVIONIQUE

    Inventor： LEFORT OLIVIER ,  PEDRAZA-RAMOS SYLVIE ,  PRESSET RENE ,  GIROUD PIERRE

    IPC: G01P15/08 ,  G01P15/12 ,  G01P15/13 ,  G01P15/18 ,  H01L29/84

    Abstract: PCT No. PCT/FR96/01968 Sec. 371 Date Jul. 30, 1998 Sec. 102(e) Date Jul. 30, 1998 PCT Filed Dec. 10, 1996 PCT Pub. No. WO97/22010 PCT Pub. Date Jun. 19, 1997An accelerometer based on monocrystalline silicon. A moving mass is connected to a fixed frame by suspension arms. The sensor is produced in the stack of two silicon wafers in which stop and counter-stop functions are produced so as to limit the amplitude of the movements of the moving mass.

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