公开(公告)号：JPH09167955A

公开(公告)日：1997-06-24

申请号：JP12966396

申请日：1996-05-24

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： GOLA ALBERTO ,  LEONE VIA TERRAZZANO ,  FUCILI GIONA ,  MILAZZO PATRIZIA

IPC: H03K17/00 ,  H03K17/082 ,  H03K19/00 ,  H03K19/003 ,  H03K19/0175 ,  H04L25/02

Abstract: PROBLEM TO BE SOLVED: To provide the detection and protection circuit for occurrence of a short-circuit for a digital output stage. SOLUTION: The detection and protection circuit for occurrence of a short- circuit for a digital output stage is provided and the circuit has an exclusive OR logic gate circuit EX1 with a 1st input terminal connecting to a signal input circuit (IN) and an output terminal connecting to an input terminal of a signal level shifter B. An exclusive OR 2nd logic gate circuit EX2 has a 1st input terminal connecting to the input node IN and a 2nd input terminal connecting to an output terminal OUT of the output stage B via an inverter circuit INI. A 2nd input terminal of the 1st logic gate circuit is connected to an output terminal of the 2nd logic gate circuit via a comparator circuit SCH1 and delay circuit means consisting of C, R, D.

公开(公告)号：DE69522097T2

公开(公告)日：2002-04-18

申请号：DE69522097

申请日：1995-05-31

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： GOLA ALBERTO ,  LEONE ,  FUCILI GIONA ,  MILAZZO PATRIZIA

IPC: H03K17/00 ,  H03K17/082 ,  H03K19/00 ,  H03K19/003 ,  H03K19/0175 ,  H04L25/02

公开(公告)号：DE69522097D1

公开(公告)日：2001-09-13

申请号：DE69522097

申请日：1995-05-31

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： GOLA ALBERTO ,  LEONE ,  FUCILI GIONA ,  MILAZZO PATRIZIA

IPC: H03K17/00 ,  H03K17/082 ,  H03K19/00 ,  H03K19/003 ,  H03K19/0175 ,  H04L25/02

公开(公告)号：DE3705154C2

公开(公告)日：1995-08-03

申请号：DE3705154

申请日：1987-02-18

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： GOLA ALBERTO

IPC: H03F1/42 ,  H03F1/08 ,  H03F1/14 ,  H03F1/48 ,  H03F3/30 ,  H03F3/45

公开(公告)号：DE3853666D1

公开(公告)日：1995-06-01

申请号：DE3853666

申请日：1988-12-08

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： GOLA ALBERTO ,  PESSINA GIANLUIGI

IPC: H02P3/12 ,  G11B19/00 ,  G11B19/20 ,  H02P3/22 ,  H03K17/0412 ,  H03K17/042 ,  H03K17/14 ,  H03K17/284 ,  H03K17/30 ,  H03K17/16 ,  H03K17/725

Abstract: The pilot circuit comprises an R-C network consisting of a condenser (Cx) inserted between a gate terminal of the MOS transistor (M) and ground and a resistance (Rx) for charging said condenser (Cx). In parallel with the resistance (Rx) there is placed an SCR circuit (Q1, Q2, Q3) with associated threshhold circuit (Q3, R1, R2, R3) which permits firing of the SCR circuit (Q1, Q2, Q3) when the charge voltage of the condenser (Cx) reaches a preset threshhold.

公开(公告)号：IT1224650B

公开(公告)日：1990-10-18

申请号：IT2318187

申请日：1987-12-23

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： GOLA ALBERTO ,  PESSINA GIANLUIGI

IPC: H02P3/12 ,  G11B19/00 ,  G11B19/20 ,  H02P3/22 ,  H03K17/0412 ,  H03K17/042 ,  H03K17/14 ,  H03K17/284

Abstract: The pilot circuit comprises an R-C network consisting of a condenser (Cx) inserted between a gate terminal of the MOS transistor (M) and ground and a resistance (Rx) for charging said condenser (Cx). In parallel with the resistance (Rx) there is placed an SCR circuit (Q1, Q2, Q3) with associated threshhold circuit (Q3, R1, R2, R3) which permits firing of the SCR circuit (Q1, Q2, Q3) when the charge voltage of the condenser (Cx) reaches a preset threshhold.

公开(公告)号：DE69217209D1

公开(公告)日：1997-03-13

申请号：DE69217209

申请日：1992-06-26

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： GOLA ALBERTO ,  FUCILI GIONA

IPC: G06F1/24 ,  H03K17/00 ,  H03K17/22

公开(公告)号：DE69021481D1

公开(公告)日：1995-09-14

申请号：DE69021481

申请日：1990-10-04

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： GARIBOLDI ROBERTO ,  GOLA ALBERTO

IPC: H02H9/04 ,  H03K17/08

Abstract: A negative overvoltage protection circuit for an insulated vertical PNP transistor (QP) the emitter whereof defines the input (VIN), the collector whereof defines the output (VOUT) and the base whereof is connected to an NPN driving transistor (QN). In order to maximally extend the negative overvoltage which can be applied to the output, the protection circuit comprises an output voltage sensor (R4), a voltage reference (VB), a comparator (Q2,Q3,D1) which is connected in input to the voltage reference (VB) and to the sensor (R4) and generates in output an activation signal when the output voltage of the PNP transistor (QP) becomes smaller than the reference, a switch (Q5) which is controlled by the comparator (Q2,Q3,D1) to switch off the NPN driving transistor (QP) upon the reception of the activation signal and a low-impedance circuit (Q4) which is connected between the emitter and the base of the insulated vertical PNP transistor (QP) and is activated by the activation signal, in a manner suitable for bringing the insulated vertical PNP transistor (QP) practically to BVCBO.

公开(公告)号：IT8921966D0

公开(公告)日：1989-10-09

申请号：IT2196689

申请日：1989-10-09

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： GARIBOLDI ROBERTO ,  GOLA ALBERTO

IPC: H02H9/04 ,  H02H

Abstract: A negative overvoltage protection circuit for stages having a transistor with collector output and with the emitter connected to a reference voltage line; a diode (D1) for protection against negative overvoltages present on the output (Vout) is arranged between the collector and the output of the stage. In order to give the output of the stage a presettable minimum voltage level, the reference voltage line is set to a preset voltage which differs from the ground voltage. For this purpose, the circuit comprises an operational amplifier (Op) in a voltage-follower configuration, the output whereof is connected to the reference voltage line, a diode (D2) which is connected between the ground and the non-inverting terminal of the operational amplifier (Op), and a current source which is connected between the non-inverting input of the operational amplifier (Op) and a negative supply line (-VEE).

公开(公告)号：IT8921965D0

公开(公告)日：1989-10-09

申请号：IT2196589

申请日：1989-10-09

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： GARIBOLDI ROBERTO ,  GOLA ALBERTO

IPC: H02H9/04 ,  H02H

Abstract: A negative overvoltage protection circuit for an insulated vertical PNP transistor (QP) the emitter whereof defines the input (VIN), the collector whereof defines the output (VOUT) and the base whereof is connected to an NPN driving transistor (QN). In order to maximally extend the negative overvoltage which can be applied to the output, the protection circuit comprises an output voltage sensor (R4), a voltage reference (VB), a comparator (Q2,Q3,D1) which is connected in input to the voltage reference (VB) and to the sensor (R4) and generates in output an activation signal when the output voltage of the PNP transistor (QP) becomes smaller than the reference, a switch (Q5) which is controlled by the comparator (Q2,Q3,D1) to switch off the NPN driving transistor (QP) upon the reception of the activation signal and a low-impedance circuit (Q4) which is connected between the emitter and the base of the insulated vertical PNP transistor (QP) and is activated by the activation signal, in a manner suitable for bringing the insulated vertical PNP transistor (QP) practically to BVCBO.