公开(公告)号：DE69935291D1

公开(公告)日：2007-04-12

申请号：DE69935291

申请日：1999-07-30

Applicant: SIEMENS AG ,  IBM

Inventor： BOGGS KARL E ,  LIN CHENTING ,  NEUTZEL JOACHIM F ,  PLOESSL ROBERT ,  RONAY MARIA ,  SCHNABEL FLORIAN ,  STEPHENS JEREMY K

IPC: H01L21/304 ,  H01L21/3105 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306 ,  H01L21/66 ,  H01L23/544

Abstract: The method of polishing metal layers on wafers comprises the steps of: using a chemical-mechanical polisher (50) to polish the metal layers (32) to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas (80), and adjusting the operation of the chemical-mechanical polisher (50) in response to the inspection of the indicator areas (80). The indicator areas (80) may include macroblocks comprised of a multitude of individual blocks (82). The wafer may be inspected by optically identifying the polishing state of the blocks (82) in the macroblock (80). Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.

公开(公告)号：DE69935291T2

公开(公告)日：2007-11-22

申请号：DE69935291

申请日：1999-07-30

Applicant: SIEMENS AG ,  IBM

Inventor： BOGGS KARL E ,  LIN CHENTING ,  NEUTZEL JOACHIM F ,  PLOESSL ROBERT ,  RONAY MARIA ,  SCHNABEL FLORIAN ,  STEPHENS JEREMY K

IPC: H01L21/304 ,  H01L21/3105 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306 ,  H01L21/66 ,  H01L23/544

Abstract: The method of polishing metal layers on wafers comprises the steps of: using a chemical-mechanical polisher (50) to polish the metal layers (32) to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas (80), and adjusting the operation of the chemical-mechanical polisher (50) in response to the inspection of the indicator areas (80). The indicator areas (80) may include macroblocks comprised of a multitude of individual blocks (82). The wafer may be inspected by optically identifying the polishing state of the blocks (82) in the macroblock (80). Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.

公开(公告)号：EP2510538A4

公开(公告)日：2014-03-26

申请号：EP10836729

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  NUNES RONALD W

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  G03F7/423

公开(公告)号：WO2011072188A3

公开(公告)日：2011-09-15

申请号：PCT/US2010059800

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM ,  AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了用于去除掩模材料（例如光致抗蚀剂）的方法以及通过去除掩模材料形成的电子器件。 例如，用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：SG181642A1

公开(公告)日：2012-07-30

申请号：SG2012042941

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.