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公开(公告)号:WO2011072188A3
公开(公告)日:2011-09-15
申请号:PCT/US2010059800
申请日:2010-12-10
Applicant: ADVANCED TECH MATERIALS , IBM , AFZALI-ARDAKANI ALI , BAUM THOMAS H , BOGGS KARL E , COOPER EMANUEL I , CYWAR DOUGLAS , KERN MATTHEW , KHOJASTEH MAHMOUD , NUNES RONALD W , TOTIR GEORGE GABRIEL
Inventor: AFZALI-ARDAKANI ALI , BAUM THOMAS H , BOGGS KARL E , COOPER EMANUEL I , CYWAR DOUGLAS , KERN MATTHEW , KHOJASTEH MAHMOUD , TOTIR GEORGE GABRIEL
IPC: H01L21/3063
CPC classification number: H01L21/31133 , G03F7/423
Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.
Abstract translation: 提出了用于去除掩模材料(例如光致抗蚀剂)的方法以及通过去除掩模材料形成的电子器件。 例如,用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰,钌和/或含锇化合物。
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公开(公告)号:EP2510538A4
公开(公告)日:2014-03-26
申请号:EP10836729
申请日:2010-12-10
Applicant: ADVANCED TECH MATERIALS , IBM
Inventor: AFZALI-ARDAKANI ALI , BAUM THOMAS H , BOGGS KARL E , COOPER EMANUEL I , CYWAR DOUGLAS , KERN MATTHEW , KHOJASTEH MAHMOUD , TOTIR GEORGE GABRIEL , NUNES RONALD W
IPC: H01L21/311 , G03F7/42
CPC classification number: H01L21/31133 , G03F7/423
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公开(公告)号:SG181642A1
公开(公告)日:2012-07-30
申请号:SG2012042941
申请日:2010-12-10
Applicant: ADVANCED TECH MATERIALS , IBM
Inventor: AFZALI-ARDAKANI ALI , BAUM THOMAS H , BOGGS KARL E , COOPER EMANUEL I , CYWAR DOUGLAS , KERN MATTHEW , KHOJASTEH MAHMOUD , NUNES RONALD W , TOTIR GEORGE GABRIEL
Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.
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公开(公告)号:DE69402108D1
公开(公告)日:1997-04-24
申请号:DE69402108
申请日:1994-04-22
Applicant: IBM
Inventor: CYWAR DOUGLAS , HESS DON HERMAN , LALONDE CHRISTIAN
Abstract: Metal is selectively etched from a substrate by: (i) applying an acrylic negative photoresist to the substrate, (ii) imaging and developing the photoresist, (iii) exposing the photoresist to actinic radiation of wavelength 200-310 nm or 2.4-8 microns, and (iv) contacting the photoresist-coated substrate with an etchant so as to remove portions of the metal not covered with photoresist.
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