公开(公告)号：WO2011072188A3

公开(公告)日：2011-09-15

申请号：PCT/US2010059800

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM ,  AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了用于去除掩模材料（例如光致抗蚀剂）的方法以及通过去除掩模材料形成的电子器件。 例如，用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：EP2510538A4

公开(公告)日：2014-03-26

申请号：EP10836729

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  NUNES RONALD W

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  G03F7/423

公开(公告)号：SG181642A1

公开(公告)日：2012-07-30

申请号：SG2012042941

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

公开(公告)号：WO2013173743A2

公开(公告)日：2013-11-21

申请号：PCT/US2013041634

申请日：2013-05-17

Applicant: ADVANCED TECH MATERIALS

Inventor： JENQ SHRANE NING ,  BOGGS KARL E ,  LIU JUN ,  THOMAS NICOLE

IPC: H01L21/302

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D7/08 ,  C11D7/267 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C25D5/48 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.

Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括至少一种季碱，至少一种胺，至少一种腐蚀抑制剂和至少一种溶剂。 该组合物可与微电子器件的表面高效地清洗后CMP残留物和污染物质，同时与阻挡层相容。

公开(公告)号：WO2010088194A3

公开(公告)日：2010-11-25

申请号：PCT/US2010022050

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

IPC: C11D3/43 ,  C11D3/44

CPC classification number: C11D11/0041 ,  C11D1/66 ,  C11D1/667 ,  C11D1/825 ,  C11D3/2072 ,  C11D3/2093 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/70341 ,  G03F7/70925

Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.

Abstract translation: 使用所述组合物从表面除去聚合物材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。 所述组合物包含至少一种有机溶剂和一种非离子表面活性剂。 此外，所述组合物的pH为约5至9。

公开(公告)号：WO2010048139A3

公开(公告)日：2010-07-29

申请号：PCT/US2009061263

申请日：2009-10-20

Applicant: ADVANCED TECH MATERIALS ,  BARNES JEFFREY A ,  BENAC BRIAN ,  BOGGS KARL E ,  FENG LIN ,  LIU JUN ,  PETRUSKA MELISSA A ,  YAN XIAODONG ,  ZHANG PENG

Inventor： BARNES JEFFREY A ,  BENAC BRIAN ,  BOGGS KARL E ,  FENG LIN ,  LIU JUN ,  PETRUSKA MELISSA A ,  YAN XIAODONG ,  ZHANG PENG

IPC: C11D1/62

CPC classification number: C11D3/0073 ,  B08B3/08 ,  C11D1/72 ,  C11D3/042 ,  C11D3/2096 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和方法，用于清洁来自其上具有所述残留物和污染物的微电子装置的化学机械抛光（CMP）残留物和污染物。 清洁组合物包含新颖的腐蚀抑制剂。 该组合物实现了对微电子器件表面上的CMP后残留物和污染物质的高效清洁，而不损害低k介电材料或铜互连材料。

公开(公告)号：WO2010088194A2

公开(公告)日：2010-08-05

申请号：PCT/US2010022050

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

IPC: C11D3/43 ,  C11D3/44

CPC classification number: C11D11/0041 ,  C11D1/66 ,  C11D1/667 ,  C11D1/825 ,  C11D3/2072 ,  C11D3/2093 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/70341 ,  G03F7/70925

Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.

Abstract translation: 使用所述组合物从表面除去聚合材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。

公开(公告)号：SG173172A1

公开(公告)日：2011-08-29

申请号：SG2011054442

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.

公开(公告)号：SG11201407657YA

公开(公告)日：2014-12-30

申请号：SG11201407657Y

申请日：2013-05-17

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： JENQ SHRANE NING ,  BOGGS KARL E ,  LIU JUN ,  THOMAS NICOLE

IPC: H01L21/302

公开(公告)号：SG2014005136A

公开(公告)日：2014-03-28

申请号：SG2014005136

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.