公开(公告)号：JP2004262757A

公开(公告)日：2004-09-24

申请号：JP2004141170

申请日：2004-05-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  SUZUKI YASUHIKO

IPC: C30B29/40 ,  C30B25/04 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element having a wide low-defect region on the surface and to provide a method for producing a semiconductor element which can easily reduce surface defects in a layer formation step using a lateral growth technique. SOLUTION: A seed crystal layer 201 is grown on a substrate 100, and a growth inhibition layer 216 is formed on the layer 201. That part of the layer 201 which is exposed through the opening of the layer 201 serves as a seed crystal part 215. GaN:Si is grown on the part 215 as a base to form the second seed crystal part 217a. The growth temperature is 1,000°C at the highest. A high-temperature growth part 217b is grown on the part 217a as a base. The growth temperature is 1,050°C at the lowest. The crystal growth proceeds chiefly in the lateral direction to form a continuous unitary layer. Almost no dislocation or crystal defect exists just above the part 217a, and therefore a wide low-defect region is formed on the surface of a nitride semiconductor layer 217. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003063897A

公开(公告)日：2003-03-05

申请号：JP2001257606

申请日：2001-08-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SUZUKI YASUHIKO ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  GOTO OSAMU ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI

IPC: C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343

CPC classification number: C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007

Abstract: PROBLEM TO BE SOLVED: To suppress the amount of the warping of a substrate below 70 μm when forming the semiconductor layer of a nitride-based III-V group compound on a substrate formed of a substance different from the nitride-based III-group compound. SOLUTION: When the semiconductor layer formed of a nitride-based III-V group compound such as GaN is grown on the substrate such as a sapphire substrate, the thickness x of the substrate is selected so as to satisfy 0 =450 μm with respect to the thickness y of the semiconductor layer of the nitride-based III-V group compound. Under the conditions of the maximum dimension D (cm) of the substrate, the amount of warping of 0 (cm), and z=y/x, D is selected so as to satisfy 0 (1-HCZ), providing that C (cm ) is a proportional constant when the radius ρ (cm) of the curvature of the substrate is expressed to be 1/ρ=CZ.

Abstract translation: 要解决的问题：在由不同于氮化物III-族化合物的物质形成的基板上形成氮化物系III-V族化合物的半导体层时，为了抑制基板低于70μm的翘曲量 。 解决方案：当在诸如蓝宝石衬底的衬底上生长由诸如GaN的氮化物III-V族化合物形成的半导体层时，选择衬底的厚度x以满足0 =450μm。 在基板的最大尺寸D（cm）的条件下，选择0

公开(公告)号：JP2002075914A

公开(公告)日：2002-03-15

申请号：JP2000258503

申请日：2000-08-29

Applicant: SONY CORP

Inventor： IKEDA MASAAKI ,  TAKEYA MOTONOBU

IPC: H01L21/301

Abstract: PROBLEM TO BE SOLVED: To prevent deviation in cleavage and cracks for improving reliability, and at the same time to obtain an excellent cleavage section in work for cleaving the material substrate along a scoring line. SOLUTION: In this device 3 for cleaving the material substrate, the material substrate 1 after going through a scribing process for forming the scoring lines 2, 2, etc., is cleaved along the scoring lines to separate the material substrate into individual sections. The device 3 has a vibration generation means 5 that generates vibration at a frequency suitable for characteristics in the quality of the material substrate, and a stress application means 5a that applies stress in a direction vertical or parallel to a surface where the scoring lines of the material substrate are added. Stress is applied from the front at a side where the scoring lines of the material substrate are formed by the vibration generation means or the rear surface, and at the same time the stress is applied by the stress application means, thus separating the material substrate into individual sections.

公开(公告)号：JP2001250798A

公开(公告)日：2001-09-14

申请号：JP2000060240

申请日：2000-03-06

Applicant: SONY CORP

Inventor： IKEDA MASAAKI

IPC: H01L21/301

Abstract: PROBLEM TO BE SOLVED: To reduce generation of cracking by concentrating a stress along a scribing line and dividing a material accurately along the scribing line. SOLUTION: In the method for dividing an objective material 1 along a scribing line 2 formed therein by applying a stress along the scribing line 2, the material is supported by a spring means 5A of a specified load at a part close to the scribing line on the side 1b opposite to the side 1a where the scribing line is formed and by a spring means 5B of a lower load at a part remote from the scribing line. The load is applied to a part remote from the scribing line on the side where the scribing line is formed.

公开(公告)号：JP2001196699A

公开(公告)日：2001-07-19

申请号：JP2000010057

申请日：2000-01-13

Applicant: SONY CORP

Inventor： TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  ASANO TAKEHARU ,  IKEDA MASAAKI ,  HINO TOMOKIMI ,  SHIBUYA KATSUYOSHI

IPC: H01L21/20 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element with a III-V family nitride semiconductor layer of superb crystallizability while preventing warp of a substrate. SOLUTION: A III-V family nitride semiconductor layer 20 as thick as 8 μm or less is provided on a substrate 11 made of sapphire, thus reducing the warp of the substrate 11 due to the difference in the thermal coefficient of expansion and the lattice constant between the substrate 11 and the III-V family nitride semiconductor layer 20. An n-side contact layer 23 composing the III-V family nitride semiconductor layer 20 partially has a lateral growth region that is grown in a lateral direction from a crystal 22A of a seed crystal layer 22. The lateral growth region has low dislocation density and hence crystallizability at a part corresponding to the lateral growth region of each layer being formed on the n-side contact layer 23 is high.

公开(公告)号：JP2006093718A

公开(公告)日：2006-04-06

申请号：JP2005288273

申请日：2005-09-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  SUZUKI YASUHIKO

IPC: H01L21/205 ,  H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor having a large low-defect region on a surface, and to provide a manufacturing method of a semiconductor element. SOLUTION: On a substrate 100, a seed crystal section 105 is formed into a stripe geometry via a buffer layer 100a, and next, a crystal is grown from the seed crystal section 105 in two-stage growing conditions, to form a nitride semiconductor layer 107. In the first stage, a low-temperature growth section 107a, whose cross-sectional shape in the thickness direction is trapezoidal, is formed at a growing temperature of 1,030°C; and in the second stage, a lateral growth is made to progress dominantly at a growing temperature of 1,070°C, to form a high-temperature growth section 107b between the low-temperature growth sections 107a. On the surface of the nitride semiconductor layer 107, hillocks and normal lattice defects are reduced, at sections above the low-temperature growth sections 107a. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供在表面上具有大的低缺陷区域的氮化物半导体的制造方法，并提供半导体元件的制造方法。 解决方案：在基板100上，通过缓冲层100a将晶种部分105形成为条纹几何形状，接着在两阶段生长条件下从晶种部分105生长晶体，形成 氮化物半导体层107.在第一阶段中，在1,030℃的生长温度下形成其厚度方向的横截面形状为梯形的低温生长部分107a; 并且在第二阶段中，使横向生长在1070℃的生长温度下主要进行，以在低温生长部分107a之间形成高温生长部分107b。 在氮化物半导体层107的表面上，在低温生长部分107a上方的部分减小了小丘和正常晶格缺陷。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2002050589A

公开(公告)日：2002-02-15

申请号：JP2000235602

申请日：2000-08-03

Applicant: SONY CORP

Inventor： IKEDA MASAAKI

IPC: H01L21/301

Abstract: PROBLEM TO BE SOLVED: To provide a method and a device for stretching and separating a semiconductor wafer, which can efficiently and surely separate the wafer into semiconductor pieces along all cleavage lines, without taking trouble and time. SOLUTION: A stretch sheet 22, having a flat semiconductor wafer sticking face 22a to which the semiconductor wafer 21 where the cleave lines 26 are formed, is stuck is held in a part at the outer peripheral side of the semiconductor wafer sticking face 22a. A depressing means 27 gives depression force from the reverse side of the semiconductor wafer sticking face 22a, and the whole semiconductor wafer sticking face 22a is swollen into a curved shape and is stretched. Then, the semiconductor wafer 21 is separated into plural semiconductor pieces 21a along the cleavage line 26.

公开(公告)号：JP2002050583A

公开(公告)日：2002-02-15

申请号：JP2000235603

申请日：2000-08-03

Applicant: SONY CORP

Inventor： IKEDA MASAAKI

IPC: C23C16/46 ,  C21D1/09 ,  H01L21/205 ,  H01L21/22 ,  H01L21/268 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To provide substrate-heating method/substrate-heating device, which use laser beams for improving the temperature distribution of a substrate to be uniform. SOLUTION: For scanning and irradiating the substrate 6 with the laser beam L from a laser beam generating source 2 via a first reflection device 3 and a second reflection device 4, a radiation thermometer 10 detects the intraface temperature distribution of the substrate and the output is supplied to a controller 11. Thus, the intraface temperature distribution difference of the substrate 6 is measured. Control signals are supplied to the galvanometers 3B and 4B of the respective reflection devices 3 and 4 from the controller 11, so that the temperature distribution difference becomes zero. A prescribed area on the substrate 6, which is not in the prescribed temperature, is heated on focus and the whole area of the substrate 6 is maintained to the prescribed temperature.

公开(公告)号：JP2001352133A

公开(公告)日：2001-12-21

申请号：JP2000168312

申请日：2000-06-05

Applicant: SONY CORP

Inventor： TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  ASANO TAKEHARU ,  GOTO OSAMU ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  HINO TOMOKIMI ,  KIJIMA SATORU ,  IKEDA MASAO

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser for obtaining a crystal growth layer with less fluctuation in a crystal axis and for improving the characteristics of a device, a semiconductor device and a nitride-family III-V group compound substrate, and their manufacturing method. SOLUTION: A plurality of seed crystal layers 12 provided separately on one surface side of a substrate 11 for growth, and an n-side contact layer 13 that is grown based on the plurality of seed crystal layers and has a growth region in a crosswise direction, are provided. In the seed crystal layer 12, the product of width w1 (unit: μm) of a boundary surface 12a with the n-side contact layer 13 in its arranged direction A and thickness t1 (unit: μm) in a direction where the n-side contact layer 13 is laminated is set to 15 or less, thus reducing the fluctuation of the crystal axis on the n-side contact layer 13, and hence improving the crystallinity of a semiconductor layer from an n-type clad layer 14 to a p-side contact layer 19 being laminated on the n-side contact layer 13.

公开(公告)号：JP2003017421A

公开(公告)日：2003-01-17

申请号：JP2002051583

申请日：2002-02-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  SUZUKI YASUHIKO

IPC: C30B29/38 ,  H01L21/205 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor, having a large low-defect region on the surface and a semiconductor element using the same, and also to provide a method of manufacturing the nitride semiconductor which enables easy reduction of surface defects in a layer formation process using lateral growth technology, and to provide a method of manufacturing the semiconductor element using the nitride semiconductor. SOLUTION: On a substrate 100, a seed crystal section 105 is formed into a stripe geometry via a buffer layer 100a, and next, a crystal is grown from the seed crystal section 105 in two-stage growing conditions, to form a nitride semiconductor layer 107. In the first stage, a low-temperature growth section 107a, whose cross-sectional shape in the thickness direction is trapezoidal, is formed at a growing temperature of 1,030 deg.C, and in the second stage; a lateral growth is made to progress dominantly at a growing temperature of 1,070 deg.C, to form a high-temperature growth section 107b between the low-temperature growth sections 107a; consequently, on the surface of the nitride semiconductor layer 107, hillocks and normal lattice defects are reduced in sections which are higher than the low-temperature growth sections 107a.

Abstract translation: 要解决的问题：为了提供在表面上具有大的低缺陷区域的氮化物半导体和使用其的半导体元件，并且还提供一种制造氮化物半导体的方法，其能够容易地减少层中的表面缺陷 并且提供使用氮化物半导体制造半导体元件的方法。 解决方案：在基板100上，通过缓冲层100a将晶种部分105形成条纹几何形状，接着在两阶段生长条件下从籽晶部分105生长晶体，以形成氮化物半导体层 在第一阶段中，在1020℃的生长温度和第二阶段中形成厚度方向的横截面形状为梯形的低温生长部分107a; 在1070摄氏度的生长温度下横向生长主要进行，以在低温生长部分107a之间形成高温生长部分107b; 因此，在氮化物半导体层107的表面上，高于低温生长部分107a的部分中的小丘和正常的晶格缺陷减小。