公开(公告)号：CA2655579C

公开(公告)日：2010-09-28

申请号：CA2655579

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASATSUMA TSUNENORI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI ,  TOJO TSUYOSHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01L21/20 ,  C30B25/02 ,  C30B29/38 ,  C30B29/40 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：CA2463169C

公开(公告)日：2009-05-12

申请号：CA2463169

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： MOTOKI KENSAKU ,  ASATSUMA TSUNENORI ,  GOTO OSAMU ,  TOJO TSUYOSHI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI

IPC: H01L21/20 ,  C30B25/02 ,  C30B25/04 ,  C30B29/38 ,  H01L21/205 ,  H01L29/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：DE60311095T2

公开(公告)日：2007-08-16

申请号：DE60311095

申请日：2003-06-06

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  HINO TOMONORI ,  GOTO OSAMU ,  FUJIMOTO TSUYOSHI ,  MATSUMOTO OSAMU ,  TAKEYA MOTONOBU ,  OOFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

Abstract: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

公开(公告)号：EP1396914A4

公开(公告)日：2004-12-22

申请号：EP02738719

申请日：2002-06-14

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  HINO TOMONORI ,  GOTO OSAMU ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

CPC classification number: H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

Abstract: A multi−beam semiconductor laser element (40) which provides a uniform light output from each beam, for ease of positioning, and which is a GaN multi−beam semiconductor laser element having four laser stripes (42A, 42B, 42C, 42D) emitting laser beams of the same wavelength. Each laser stripe (42A−42D) has a p−side common electrode (48) on a mesa (46) formed on a sapphire substrate (44), and respective laser stripes have respective active regions (50A, 50B. 50C, 50D). Two n−side electrodes (52A, 52B) are provided on an n−type GaN contact layer (54) on the opposite sides of the mesa (46) as common electrode facing the p−side common electrode (48). The distance A between the laser stripe (42A) and the laser stripe (42D) is up to 100 μm. The distance B 1 between the laser stripe (42A) and the laser−side end of the n−side electrode (52B) is up to 150 μm, and the distance B 2 between the laser stripe (42D) and the laser−side end of the n−side electrode (52A) is up to 150 μm.

Abstract translation: 一种多光束半导体激光元件（40），其为了便于定位而从每个光束提供均匀的光输出，并且是具有四个激光条纹（42A，42B，42C，42D）的GaN多光束半导体激光元件 相同波长的激光束。 每个激光条纹（42A-42D）在形成于蓝宝石基板（44）上的台面（46）上具有p侧公共电极（48），并且各激光条纹具有各自的有源区域（50A，50B，50C，50D）。 两个n侧电极（52A，52B）设置在台面（46）的相对侧上作为面向p侧公共电极（48）的公共电极的n型GaN接触层（54）上。 激光条纹（42A）和激光条纹（42D）之间的距离A高达100μm。 激光条纹（42A）与n侧电极（52B）的激光侧端部之间的距离B1达到150μm，并且激光条纹（42D）与激光条纹（42D）的激光侧端部之间的距离B2 n侧电极（52A）达到150μm。

公开(公告)号：EP1441426A4

公开(公告)日：2013-05-22

申请号：EP02772973

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASATSUMA TSUNENORI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI ,  TOJO TSUYOSHI ,  GOTO OSAMU ,  MOTOKI K

IPC: B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

CPC classification number: C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：EP1667292A4

公开(公告)日：2007-09-19

申请号：EP04786431

申请日：2004-08-26

Applicant: SONY CORP

Inventor： TOMIYA SHIGETAKA ,  GOTO OSAMU

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/32 ,  H01S5/20 ,  H01S5/34

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/3407

Abstract: A GaN III-V compound semiconductor light-emitting device with high luminous efficiency and high reliability is disclosed which has an emission wavelength of not less than 440 nm. A GaN semiconductor laser device (10) comprises a stripe projected portion (18) composed of the surface layer of a sapphire substrate (12), a buffer layer (14) and a first GaN layer (16), and a multilayer structure on the sapphire substrate which is composed of a second GaN layer (20), an n-side cladding layer (22), an n-side guide layer (24), an active layer (26), a deterioration-preventing layer (28), a p-side guide layer (30), a p-side cladding layer (32), and a p-side contact layer (34). The active layer is formed as a quantum well structure of a GaInN barrier layer (36) and a GaInN well layer (38), and a planer crystal defect-suppressing layer (40) composed of an AlGaN layer is interposed between the barrier layer and either or both of the upper and lower surfaces of the well layer. The upper portions of the p-side contact layer and the p-side cladding layer are formed as a stripe ridge (42), and a mesa (44) is formed parallel to the ridge.

公开(公告)号：DE60224273D1

公开(公告)日：2008-02-07

申请号：DE60224273

申请日：2002-06-14

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  HINO TOMONORI ,  GOTO OSAMU ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/40 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

Abstract: A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 mu m. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 mu m while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 mu m.

公开(公告)号：CA2655579A1

公开(公告)日：2003-04-24

申请号：CA2655579

申请日：2002-10-03

Applicant: SONY CORP ,  SUMITOMO ELECTRIC INDUSTRIES

Inventor： GOTO OSAMU ,  ASATSUMA TSUNENORI ,  MOTOKI KENSAKU ,  TOMIYA SHIGETAKA ,  TOJO TSUYOSHI ,  TAMAMURA KOSHI

IPC: H01L21/20 ,  C30B25/02 ,  C30B29/38 ,  C30B29/40 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：DE602004029910D1

公开(公告)日：2010-12-16

申请号：DE602004029910

申请日：2004-08-26

Applicant: SONY CORP

Inventor： TOMIYA SHIGETAKA ,  GOTO OSAMU

IPC: H01S5/343 ,  H01L33/06 ,  H01L33/32 ,  H01S5/20 ,  H01S5/34

公开(公告)号：DE60224273T2

公开(公告)日：2008-12-24

申请号：DE60224273

申请日：2002-06-14

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  HINO TOMONORI ,  GOTO OSAMU ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/40 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

Abstract: A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 mu m. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 mu m while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 mu m.