公开(公告)号：DE69323031T2

公开(公告)日：1999-07-15

申请号：DE69323031

申请日：1993-10-22

Applicant: SONY CORP

Inventor： OZAWA MASAFUMI ,  ITO SATOSHI ,  NARUI FUMIYO

IPC: H01L21/28 ,  H01L21/443 ,  H01L31/0224 ,  H01L33/04 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01L33/00

Abstract: An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer (3) made of Pd or an alloy containing Pd; and a metal layer (4, 5) provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer (3) made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer (2); and providing a metal layer (4, 5) on the layer (3) made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.

公开(公告)号：DE69323031D1

公开(公告)日：1999-02-25

申请号：DE69323031

申请日：1993-10-22

Applicant: SONY CORP

Inventor： OZAWA MASAFUMI ,  ITO SATOSHI ,  NARUI FUMIYO

IPC: H01L21/28 ,  H01L21/443 ,  H01L31/0224 ,  H01L33/04 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01L33/00

Abstract: An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer (3) made of Pd or an alloy containing Pd; and a metal layer (4, 5) provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer (3) made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer (2); and providing a metal layer (4, 5) on the layer (3) made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.

公开(公告)号：DE69313033T2

公开(公告)日：1998-03-12

申请号：DE69313033

申请日：1993-06-18

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  ITO SATOSHI ,  IOCHI YOSHINO ,  MIYAJIMA TAKAO ,  OZAWA MASAFUMI ,  AKIMOTO KATSUHIRO ,  ISHIBASHI AKIRA ,  HIEI FUTOSHI

IPC: H01L29/15 ,  H01L21/44 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347 ,  H01S3/025 ,  H01S3/19 ,  H01L33/00 ,  H01L31/0352

Abstract: A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9).

公开(公告)号：DE69313033D1

公开(公告)日：1997-09-18

申请号：DE69313033

申请日：1993-06-18

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  ITO SATOSHI ,  IOCHI YOSHINO ,  MIYAJIMA TAKAO ,  OZAWA MASAFUMI ,  AKIMOTO KATSUHIRO ,  ISHIBASHI AKIRA ,  HIEI FUTOSHI

IPC: H01L29/15 ,  H01L21/44 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347 ,  H01S3/025 ,  H01S3/19 ,  H01L33/00 ,  H01L31/0352

Abstract: A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9).