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1.发明公开
公开(公告)号：EP0714122A4
公开(公告)日：1997-05-28
申请号：EP95917493
申请日：1995-04-28
Applicant: SONY CORP
Inventor： ITO SATOSHI , TANIGUCHI SATOSHI , IKEDA MASAO , OKUYAMA HIROYUKI , TSUKAMOTO HIRONORI , NAGAI MASAHARU , TAMAMURA KOSHI
IPC: C23C14/00 , C23C14/06 , C30B23/02 , H01L21/363 , H01L21/365 , H01L33/00 , H01L33/28
CPC classification number: H01L33/285 , C23C14/0026 , C23C14/0629 , C30B23/02 , C30B29/48 , H01L21/02395 , H01L21/02463 , H01L21/02474 , H01L21/02477 , H01L21/02551 , H01L21/0256 , H01L21/02579 , H01L21/02631 , H01L33/0087
Abstract: A film of a II - VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II - VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.
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公开(公告)号：DE69313033T2
公开(公告)日：1998-03-12
申请号：DE69313033
申请日：1993-06-18
Applicant: SONY CORP
Inventor： IKEDA MASAO , ITO SATOSHI , IOCHI YOSHINO , MIYAJIMA TAKAO , OZAWA MASAFUMI , AKIMOTO KATSUHIRO , ISHIBASHI AKIRA , HIEI FUTOSHI
IPC: H01L29/15 , H01L21/44 , H01L33/06 , H01L33/28 , H01L33/40 , H01S5/042 , H01S5/30 , H01S5/327 , H01S5/347 , H01S3/025 , H01S3/19 , H01L33/00 , H01L31/0352
Abstract: A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer (2), an active layer (3), a p-type ZnMgSSe cladding layer (4), a p-type ZnSe contact layer (5) and a p-type ZnTe contact layer (6) which are stacked in this sequence on an n-type GaAs substrate (1). A p-side electrode (7) is provided on the p-type ZnTe contact layer (6). An n-side electrode (8) is provided on the back surface of the n-type GaAs substrate (1). A maltiquantum well layer (9) comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer (5) along the junction interface between the p-type ZnSe contact layer (5) and the p-type ZnTe contact layer (6). Holes injected from the p-side electrode (7) pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer (9).
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公开(公告)号：DE69404911D1
公开(公告)日：1997-09-18
申请号：DE69404911
申请日：1994-06-29
Applicant: SONY CORP
Inventor： ITO SATOSHI , OHATA TOYOHARU , ISHIBASHI AKIRA , NAKAYAMA NORIKAZU
Abstract: A semiconductor light-emitting device capable of emitting blue to green light is disclosed. The device comprises a first cladding layer of the first conduction type stacked on a compound semiconductor substrate and made of ZnMgSSe compound semiconductor; an active layer stacked on the first cladding layer; a second cladding layer of the second conduction type stacked on the active layer and made of a ZnMgSSe compound semiconductor; and ZnSSe compound semiconductor layers provided on the second cladding layer and/or between the compound semiconductor substrate and the first cladding layer. The device has good optical confinement characteristics and carrier confinement characteristics, generates only a small amount of heat during its operation, and is fabricated easily.
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公开(公告)号：MX9600508A
公开(公告)日：1997-04-30
申请号：MX9600508
申请日：1995-04-28
Applicant: SONY CORP
Inventor： ITO SATOSHI , IKEDA MASAO , OKUYAMA HIROYUKI , TSUKAMOTO HIRONORI , NAGAI MASAHARU , TAMAMURA KOSHI , TANIGUCHI SATOSHI
IPC: C23C14/00 , C23C14/06 , C30B23/02 , H01L21/363 , H01L21/365 , H01L33/00 , H01L33/28 , H01L21/203
Abstract: Una película de un semiconductor compuesto del grupo II - VI de por lo menos uno de los elementos que pertenecen al grupo II de la tabla periodica, y por lo menos uno de los elementos que pertenecen al grupo VI de la tabla periodica se deposita sobre un substrato. Cuando la película se deposita sobre el substrato, se aplica un plasma de nitrogeno en estado excitado al substrato mientras que se remueven las partículas cargadas del plasma mediante un medio de remocion de partícula cargada. La película depositada del semiconductor compuesto del grupo II - VI adulterado con nitrogeno tiene un porcentaje aumentado de átomos de nitrogeno activados y cristalinidad mejorada.
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公开(公告)号：DE69323031T2
公开(公告)日：1999-07-15
申请号：DE69323031
申请日：1993-10-22
Applicant: SONY CORP
Inventor： OZAWA MASAFUMI , ITO SATOSHI , NARUI FUMIYO
IPC: H01L21/28 , H01L21/443 , H01L31/0224 , H01L33/04 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/327 , H01L33/00
Abstract: An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer (3) made of Pd or an alloy containing Pd; and a metal layer (4, 5) provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer (3) made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer (2); and providing a metal layer (4, 5) on the layer (3) made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.
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Patent Agency Ranking
公开(公告)号：DE69323031D1
公开(公告)日：1999-02-25
申请号：DE69323031
申请日：1993-10-22
Applicant: SONY CORP
Inventor： OZAWA MASAFUMI , ITO SATOSHI , NARUI FUMIYO
IPC: H01L21/28 , H01L21/443 , H01L31/0224 , H01L33/04 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/327 , H01L33/00
Abstract: An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer (3) made of Pd or an alloy containing Pd; and a metal layer (4, 5) provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer (3) made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer (2); and providing a metal layer (4, 5) on the layer (3) made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.
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公开(公告)号：DE69522888T2
公开(公告)日：2002-04-11
申请号：DE69522888
申请日：1995-10-12
Applicant: SONY CORP
Inventor： TOMIYA SHIGETAKA , NAKANO KAZUSHI , ITO SATOSHI , MINATOYA RIKAKO
IPC: C30B25/14 , C30B23/02 , H01L21/203 , H01L21/363 , H01L21/365 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/327 , H01L33/00
Abstract: An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5
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公开(公告)号：DE69404911T2
公开(公告)日：1998-03-12
申请号：DE69404911
申请日：1994-06-29
Applicant: SONY CORP
Inventor： ITO SATOSHI , OHATA TOYOHARU , ISHIBASHI AKIRA , NAKAYAMA NORIKAZU
Abstract: A semiconductor light-emitting device capable of emitting blue to green light is disclosed. The device comprises a first cladding layer of the first conduction type stacked on a compound semiconductor substrate and made of ZnMgSSe compound semiconductor; an active layer stacked on the first cladding layer; a second cladding layer of the second conduction type stacked on the active layer and made of a ZnMgSSe compound semiconductor; and ZnSSe compound semiconductor layers provided on the second cladding layer and/or between the compound semiconductor substrate and the first cladding layer. The device has good optical confinement characteristics and carrier confinement characteristics, generates only a small amount of heat during its operation, and is fabricated easily.
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公开(公告)号：DE69522737T2
公开(公告)日：2002-07-04
申请号：DE69522737
申请日：1995-04-28
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , ITO SATOSHI , OKUYAMA HIROYUKI , NAKANO KAZUSHI , KONDO KENJI , TAKEISHI REIKO
Abstract: A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.
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公开(公告)号：DE69522737D1
公开(公告)日：2001-10-25
申请号：DE69522737
申请日：1995-04-28
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , ITO SATOSHI , OKUYAMA HIROYUKI , NAKANO KAZUSHI , KONDO KENJI , TAKEISHI REIKO
Abstract: A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.
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