公开(公告)号：EP2214199A1

公开(公告)日：2010-08-04

申请号：EP10275003.1

申请日：2010-01-20

Applicant: SPP Process Technology Systems UK Limited

Inventor： Tossell, David

IPC: H01L21/3065 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01L21/6831 ,  H01L21/68735

Abstract: A method is for plasma etching elongate features in a generally planar workpiece of a type located in a chamber. The method includes etching a test workpiece in a flat configuration in the chamber, determining the respective angle of a longitudinal portion of the features relative to an axis passing orthogonally through the workpiece, and determining the curvature of the workpiece, which would have been required to reduce the angles, at least over a central portion of the workpiece, substantially to 0°. The method further includes processing a further workpiece of the same type whilst it is curved with the determined curvature.

Abstract translation: 一种方法是在位于腔室中的类型的大致平面的工件中等离子体蚀刻细长特征。 该方法包括在腔室中以平坦构型蚀刻测试工件，确定特征相对于通过工件正交通过的轴线的纵向部分的相应角度，并确定工件的曲率，这将是必需的 至少在工件的中心部分上将角度减小到0°。 该方法还包括在以所确定的曲率弯曲的同时处理相同类型的另外的工件。

公开(公告)号：EP2237309B1

公开(公告)日：2019-10-02

申请号：EP10154656.2

申请日：2010-02-25

Applicant: SPP Process Technology Systems UK Limited

Inventor： Ansell, Oliver ,  Barrass, Anthony ,  Bennett, Paul ,  Tossell, David

IPC: H01J37/32 ,  H01L21/67

公开(公告)号：EP2237309A2

公开(公告)日：2010-10-06

申请号：EP10154656.2

申请日：2010-02-25

Applicant: SPP Process Technology Systems UK Limited

Inventor： Ansell, Oliver ,  Barrass, Anthony ,  Bennett, Paul ,  Tossell, David

IPC: H01L21/00

CPC classification number: H01L21/67253 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299

Abstract: Apparatus for chemically etching a Workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a Workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the Workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.

Abstract translation: 用于化学蚀刻工件的设备包括用于接收处理气体并具有用于抽取废气的泵送端口的室，以及位于泵送端口上游的室中的工件支撑件。 腔室还包括位于泵送端口的上游并且在工件支撑件下游的子室，并且子室包括与窗口相邻的窗口和激发源，用于在废气样本中产生等离子体 产生可以通过窗口监测的光发射。

公开(公告)号：EP2237309A3

公开(公告)日：2011-08-03

申请号：EP10154656.2

申请日：2010-02-25

Applicant: SPP Process Technology Systems UK Limited

Inventor： Ansell, Oliver ,  Barrass, Anthony ,  Bennett, Paul ,  Tossell, David

IPC: H01L21/00

CPC classification number: H01L21/67253 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299

Abstract: Apparatus for chemically etching a Workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a Workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the Workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.