BIT LINE DETECTING CIRCUIT AND METHOD FOR DYNAMIC RANDOM ACCESS MEMORY

    公开(公告)号:JP2001250383A

    公开(公告)日:2001-09-14

    申请号:JP2001063625

    申请日:2001-03-07

    Abstract: PROBLEM TO BE SOLVED: To provide a technology for controlling a booststrap circuit for boosting a voltage level generated on a word line of a DRAM. SOLUTION: The booststrap circuit is enabled in a period succeeding to initial power-up of a sense amplifier of a memory device during a performing period of memory access operation, the time when voltage generated on a selected bit line intersects the prescribed voltage level is detected, after that, the bootstrap circuit is enabled. Thus, the prescribed period elapse between turning-on of the sense amplifier and activation of the bootstrap circuit, therefore, influence affected to operation of the bootstrap circuit by a noise introduced by turning on the sense amplifier is reduced.

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    公开(公告)号:DE60137556D1

    公开(公告)日:2009-03-19

    申请号:DE60137556

    申请日:2001-02-22

    Abstract: A dynamic random access memory device has bootstrap circuitry that boosts a voltage level appearing on word lines. During execution of a memory access operation, the bootstrap circuitry is enabled a period of time following the power up of sense amplifiers. A circuit senses when the voltage appearing on a select bit line crosses a predetermined voltage level, and enables the bootstrap circuitry thereafter. A period of time elapses between the sense amplifiers turning on and the activation of the bootstrap circuitry, thereby reducing noise introduced from the sense amplifiers turning on from impacting the operation of the bootstrap circuitry.

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