公开(公告)号：EP3076143B1

公开(公告)日：2018-06-13

申请号：EP15200458.6

申请日：2015-12-16

Applicant: STMicroelectronics S.r.l.

Inventor： VAIANA, Michele ,  CASELLA, Daniele ,  BRUNO, Giuseppe

IPC: G01K7/01 ,  G01K7/34

CPC classification number: G01K7/343 ,  G01K7/01 ,  G01K7/34

Abstract: A sensing element (25) is integrated in a semiconductor material chip (60) and has a sensing diode (3), of a junction type, configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage (28) is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode (3) has a cathode terminal (K) coupled to a biasing node (2) and an anode terminal (A) coupled to a first input (7) of the sensing stage (28). The biasing node (2) receives a voltage (DRH) positive with respect to the first input (7) of the sensing stage (28) for keeping the sensing diode reverse biased.

公开(公告)号：EP3076143A1

公开(公告)日：2016-10-05

申请号：EP15200458.6

申请日：2015-12-16

Applicant: STMicroelectronics S.r.l.

Inventor： VAIANA, Michele ,  CASELLA, Daniele ,  BRUNO, Giuseppe

IPC: G01K7/01 ,  G01K7/34

CPC classification number: G01K7/343 ,  G01K7/01 ,  G01K7/34

Abstract: A sensing element (25) is integrated in a semiconductor material chip (60) and has a sensing diode (3), of a junction type, configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage (28) is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode (3) has a cathode terminal (K) coupled to a biasing node (2) and an anode terminal (A) coupled to a first input (7) of the sensing stage (28). The biasing node (2) receives a voltage (DRH) positive with respect to the first input (7) of the sensing stage (28) for keeping the sensing diode reverse biased.

Abstract translation: 感测元件（25）集成在半导体材料芯片（60）中并且具有结型的感测二极管（3），其被配置为反向偏置，使得其结电容对于局部温度敏感。 读取级（28）耦合到感测元件，用于检测感测二极管的结电容的变化，并输出与感测二极管的局部温度成比例的读取采集信号。 感测二极管（3）具有耦合到偏置节点（2）的阴极端子（K）和耦合到感测级（28）的第一输入端（7）的阳极端子（A）。 偏置节点（2）接收相对于感测级（28）的第一输入端（7）为正的电压（DRH），用于保持感测二极管反向偏置。

公开(公告)号：EP3098195A1

公开(公告)日：2016-11-30

申请号：EP15200289.5

申请日：2015-12-15

Applicant: STMicroelectronics S.r.l.

Inventor： BRUNO, Giuseppe ,  CONTI, Sebastiano ,  CHIRICOSTA, Mario ,  VAIANA, Michele ,  IPPOLITO, Calogero Marco ,  MAIORE, Mario ,  CASELLA, Daniele

IPC: B81B7/00 ,  G01L19/00

CPC classification number: B81B7/007 ,  B81B7/02 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2207/094 ,  G01L19/0092 ,  G01N27/223 ,  H01L23/3121 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A packaged sensor assembly includes: a packaging structure (2), having at least one opening (18); a humidity sensor (5) and a pressure sensor (10), which are housed inside the packaging structure (2) and communicate fluidically with the outside through the opening (18), and a control circuit (7), operatively coupled to the humidity sensor (5) and to the pressure sensor (10);
wherein the humidity sensor (5) and the control circuit (7) are integrated in a first chip (3), and the pressure sensor (10) is integrated in a second chip (8) distinct from the first chip (3) and bonded to the first chip (3).

Abstract translation: 包装传感器组件包括：具有至少一个开口（18）的包装结构（2）; 湿度传感器（5）和压力传感器（10），其容纳在所述包装结构（2）内并通过所述开口（18）与所述外部流体连通;以及控制电路（7），其可操作地耦合到所述湿度 传感器（5）和压力传感器（10）; 其中所述湿度传感器（5）和所述控制电路（7）集成在第一芯片（3）中，并且所述压力传感器（10）集成在与所述第一芯片（3）不同的第二芯片（8）中并且 到第一芯片（3）。