INTEGRATED ELECTRONIC DEVICE COMPRISING A TEMPERATURE SENSOR AND SENSING METHOD
    1.
    发明公开
    INTEGRATED ELECTRONIC DEVICE COMPRISING A TEMPERATURE SENSOR AND SENSING METHOD 有权
    INTEGRIERTE ELEKTRONISCHE VORRICHTUNG MIT TEMPERATURSENSOR UND MESSVERFAHREN

    公开(公告)号:EP3076143A1

    公开(公告)日:2016-10-05

    申请号:EP15200458.6

    申请日:2015-12-16

    CPC classification number: G01K7/343 G01K7/01 G01K7/34

    Abstract: A sensing element (25) is integrated in a semiconductor material chip (60) and has a sensing diode (3), of a junction type, configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage (28) is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode (3) has a cathode terminal (K) coupled to a biasing node (2) and an anode terminal (A) coupled to a first input (7) of the sensing stage (28). The biasing node (2) receives a voltage (DRH) positive with respect to the first input (7) of the sensing stage (28) for keeping the sensing diode reverse biased.

    Abstract translation: 感测元件(25)集成在半导体材料芯片(60)中并且具有结型的感测二极管(3),其被配置为反向偏置,使得其结电容对于局部温度敏感。 读取级(28)耦合到感测元件,用于检测感测二极管的结电容的变化,并输出与感测二极管的局部温度成比例的读取采集信号。 感测二极管(3)具有耦合到偏置节点(2)的阴极端子(K)和耦合到感测级(28)的第一输入端(7)的阳极端子(A)。 偏置节点(2)接收相对于感测级(28)的第一输入端(7)为正的电压(DRH),用于保持感测二极管反向偏置。

    INTEGRATED ELECTRONIC DEVICE COMPRISING A TEMPERATURE SENSOR AND SENSING METHOD

    公开(公告)号:EP3076143B1

    公开(公告)日:2018-06-13

    申请号:EP15200458.6

    申请日:2015-12-16

    CPC classification number: G01K7/343 G01K7/01 G01K7/34

    Abstract: A sensing element (25) is integrated in a semiconductor material chip (60) and has a sensing diode (3), of a junction type, configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage (28) is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode (3) has a cathode terminal (K) coupled to a biasing node (2) and an anode terminal (A) coupled to a first input (7) of the sensing stage (28). The biasing node (2) receives a voltage (DRH) positive with respect to the first input (7) of the sensing stage (28) for keeping the sensing diode reverse biased.

    THERMOGRAPHIC SENSOR WITH THERMAL TRANSISTORS DRIVEN BY THERMO-COUPLES

    公开(公告)号:EP4006509A1

    公开(公告)日:2022-06-01

    申请号:EP21211154.6

    申请日:2021-11-29

    Abstract: A thermographic sensor (105) is proposed. The thermographic sensor (105) comprises one or more thermo-couples (305), each for providing a sensing voltage depending on a difference between a temperature of a hot joint (H) and a temperature of a cold joint (P-N) of the thermo-couple (305); the thermographic sensor (105) further comprises one or more sensing transistors (310), each driven according to the sensing voltages of one or more corresponding thermo-couples (305) for providing a sensing electrical signal depending on its temperature and on the corresponding sensing voltages. A thermographic device (100) comprising the thermographic sensor (105) and a corresponding signal processing circuit (110), and a system (700) comprising one or more thermographic devices (100) are also proposed.

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