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    ASSEMBLY OF A SEMICONDUCTOR INTEGRATED DEVICE INCLUDING A MEMS ACOUSTIC TRANSDUCER
    1.
    发明申请
    ASSEMBLY OF A SEMICONDUCTOR INTEGRATED DEVICE INCLUDING A MEMS ACOUSTIC TRANSDUCER 审中-公开
    包含MEMS声学传感器的半导体集成器件的组装

    公开(公告)号：WO2013156539A1

    公开(公告)日：2013-10-24

    申请号：PCT/EP2013/058029

    申请日：2013-04-17

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： CONTI, Sebastiano ,  MAGGI, Luca

    IPC: H04R1/04 ,  H04R19/00 ,  H04R19/04

    CPC classification number: H04R1/04 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2924/15151 ,  H01L2924/16151 ,  H04R19/005 ,  H04R19/04 ,  H04R2201/003 ,  H01L2924/00014

    Abstract: In an assembly of a semiconductor integrated device (30), a package (32) has a base element (33) and a covering element (34) defining an internal space (35), an access opening (36) is provided through the covering element (34) for access to the internal space (35) from outside, and a MEMS acoustic transducer (20) is housed within the package (32) and includes a die (21) integrating a microelectromechanical sensing structure (1), defining a membrane (2) suspended over a cavity (6) and facing a rigid plate (3). The MEMS acoustic transducer (20) is set so that the die (21) is directly set between the access opening (36) and the internal space (35), defining an uninterrupted fluidic path including the access opening (36), the cavity (6), and the internal space (35). The semiconductor integrated device (30) includes a further MEMS sensor (44), with a die (45) integrating a respective microelectromechanical sensing structure (46) having a sensing element (64) set in fluid communication with the outside through the same fluidic path.

    Abstract translation: 在半导体集成装置（30）的组件中，封装（32）具有基部元件（33）和限定内部空间（35）的覆盖元件（34），通过覆盖物 元件（34），用于从外部进入内部空间（35），以及MEMS声学换能器（20）容纳在所述封装（32）内，并且包括集成微机电感测结构（1）的模具（21） 膜（2）悬挂在空腔（6）上并面向刚性板（3）。 MEMS声学换能器（20）被设置成使得模具（21）直接设置在进入开口（36）和内部空间（35）之间，限定了包括进入开口（36），空腔（36）的不间断流体路径 6）和内部空间（35）。 半导体集成器件（30）包括另外的MEMS传感器（44），其具有集成各自的微机电感测结构（46）的管芯（45），所述微机电感测结构（46）具有通过相同的流体路径与外部流体连通的传感元件（64） 。

    ACOUSTIC TRANSDUCER, AND MICROPHONE USING THE ACOUSTIC TRANSDUCER
    6.
    发明公开
    ACOUSTIC TRANSDUCER, AND MICROPHONE USING THE ACOUSTIC TRANSDUCER 有权
    声学传感器和使用声学传感器的麦克风

    公开(公告)号：EP2579617A1

    公开(公告)日：2013-04-10

    申请号：EP11786478.5

    申请日：2011-05-10

    Applicant: Omron Corporation ,  STMicroelectronics S.r.l.

    Inventor： KASAI, Takashi ,  UCHIDA, Yuki ,  HORIMOTO, Yasuhiro ,  CONTI, Sebastiano

    IPC: H04R19/04

    CPC classification number: H04R3/00 ,  H04R19/016

    Abstract: An acoustic sensor (11) includes: a semiconductor substrate; a vibrating membrane (22), formed above the semiconductor substrate, which includes a vibrating electrode (22a); and a fixed membrane (23), formed on an upper surface of the semiconductor substrate, which includes a fixed electrode (23a), the acoustic sensor (11) detecting an acoustic wave according to a change in capacitance between the vibrating electrode (22a) and the fixed electrode (23a). The fixed membrane (23) has a plurality of sound hole portions (32) formed therein in order to allow the acoustic wave to reach the vibrating membrane (22) from outside, and the fixed electrode (23a) is formed so that a boundary of an edge portion (40) of the fixed electrode (23a) does not intersect the sound hole portions (32).

    Abstract translation: 声传感器（11）包括：半导体衬底; 振动膜（22），形成在所述半导体基板上方，其包括振动电极（22a）;振动膜 以及形成在所述半导体基板的上表面上的固定膜23，所述固定膜23包括固定电极23a，所述声学传感器11根据所述振动电极22a与所述振动电极之间的电容变化来检测声波， 和固定电极（23a）。 固定膜（23）具有形成在其中的多个音孔部（32），以允许声波从外部到达振动膜（22），并且固定电极（23a）形成为使得 固定电极（23a）的边缘部分（40）不与音孔部分（32）相交。

    OSCILLATING STRUCTURE WITH PIEZOELECTRIC ACTUATION, SYSTEM AND MANUFACTURING METHOD
    7.
    发明公开
    OSCILLATING STRUCTURE WITH PIEZOELECTRIC ACTUATION, SYSTEM AND MANUFACTURING METHOD 审中-公开
    压电驱动的振荡结构，系统和制造方法

    公开(公告)号：EP3276391A1

    公开(公告)日：2018-01-31

    申请号：EP17162612.0

    申请日：2017-03-23

    Applicant: STMicroelectronics S.r.l.

    Inventor： CARMINATI, Roberto ,  MERLI, Massimiliano ,  CONTI, Sebastiano

    IPC: G02B26/08

    CPC classification number: G02B26/0858 ,  G03B21/008 ,  H01L41/053 ,  H01L41/332

    Abstract: An oscillating structure (30) with piezoelectric actuation, comprising: a first torsional elastic element (56) and a second torsional elastic element (58) constrained to respective portions of a fixed supporting body (40) and defining an axis of rotation (O); a mobile element (55, 57, 60) set between, and connected to, the first and second torsional elastic elements (56, 58), the mobile element being rotatable about the axis of rotation (O) as a consequence of a torsion of the first and second deformable elements; and a first control region (66), which is coupled to the mobile element (55, 57, 60) and houses a first piezoelectric actuator (70) configured to cause, in use, a local deformation of the first control region (66) that generates a torsion of the first and second torsional elastic elements (56, 58).

    Abstract translation: 1。一种具有压电致动的摆动结构（30），包括：第一扭转弹性元件（56）和第二扭转弹性元件（58），所述第一扭转弹性元件和第二扭转弹性元件被约束至固定支撑体（40）的相应部分并限定旋转轴线（O） ; 设置在所述第一和第二扭转弹性元件（56,58）之间并连接到所述第一和第二扭转弹性元件（56,58）之间的可移动元件（55,57,60），所述可移动元件能够围绕所述旋转轴线（O）旋转，作为 第一和第二可变形元件; 和第一控制区域（66），所述第一控制区域联接到所述可移动元件（55,57,60）并容纳第一压电致动器（70），所述第一压电致动器（70）被配置为在使用时导致所述第一控制区域（66） 产生第一和第二扭转弹性元件（56,58）的扭转。

    MEMS ACOUSTIC TRANSDUCER WITH COMBFINGERED ELECTRODES AND CORRESPONDING MANUFACTURING PROCESS
    8.
    发明公开
    MEMS ACOUSTIC TRANSDUCER WITH COMBFINGERED ELECTRODES AND CORRESPONDING MANUFACTURING PROCESS 审中-公开
    具有梳状电极的MEMS声学换能器及相应的制造工艺

    公开(公告)号：EP3247134A1

    公开(公告)日：2017-11-22

    申请号：EP16206878.7

    申请日：2016-12-23

    Applicant: STMicroelectronics S.r.l.

    Inventor： VARISCO, Igor ,  LAMAGNA, Luca ,  ADORNO, Silvia ,  PERLETTI, Matteo ,  GATTERE, Gabriele ,  VALZASINA, Carlo ,  CONTI, Sebastiano

    IPC: H04R19/00 ,  H04R31/00 ,  B81C1/00

    CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C1/00166 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

    Abstract: A MEMS acoustic transducer (20) provided with: a substrate (21) of semiconductor material, having a back surface (21b) and a front surface (21a) opposite with respect to a vertical direction (z); a first cavity (22) formed within the substrate (21), which extends from the back surface (21b) to the front surface (21a); a membrane (23) which is arranged at the upper surface (21a), suspended above the first cavity (22) and anchored along a perimeter thereof to the substrate (21); and a combfingered electrode arrangement (28) including a number of mobile electrodes (29) coupled to the membrane (23) and a number of fixed electrodes (30) coupled to the substrate (21) and facing respective mobile electrodes (29) for forming a sensing capacitor, wherein a deformation of the membrane (23) as a result of incident acoustic pressure waves causes a capacitive variation (ΔC) of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane (23) and extends parallel thereto.

    Abstract translation: 一种MEMS声换能器（20），其设置有：半导体材料的衬底（21），其具有相对于竖直方向（z）相对的后表面（21b）和前表面（21a）; 形成在所述基板（21）内的从所述背面（21b）延伸到所述前表面（21a）的第一空腔（22）; 设置在所述上​​表面（21a）处并悬挂在所述第一腔体（22）上方并沿其周边锚定到所述基底（21）的膜（23）; 以及包括耦合到所述膜（23）的多个可动电极（29）和耦合到所述衬底（21）并且面向相应的可动电极（29）以形成的多个固定电极（30）的梳状指状电极布置 感测电容器，其中由于入射声压波导致膜（23）的变形导致感测电容器的电容变化（ΔC）。 特别地，梳形电极装置相对于膜（23）垂直放置并且与其平行地延伸。

    MICRO-ELECTRO-MECHANICAL TYPE PRESSURE DEVICE HAVING LOW SENSITIVITY TO TEMPERATURE
    9.
    发明公开
    MICRO-ELECTRO-MECHANICAL TYPE PRESSURE DEVICE HAVING LOW SENSITIVITY TO TEMPERATURE 审中-公开
    具有低温灵敏度的微电机械式压力装置

    公开(公告)号：EP3210934A1

    公开(公告)日：2017-08-30

    申请号：EP16194672.8

    申请日：2016-10-19

    Applicant: STMicroelectronics S.r.l.

    Inventor： DUQI, Enri ,  CONTI, Sebastiano ,  BALDO, Lorenzo ,  VILLA, Flavio Francesco

    IPC: B81B3/00

    CPC classification number: B81B7/0038 ,  B81B3/0086 ,  B81B7/0019 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00269

    Abstract: A micro-electro-mechanical pressure sensor device (100), formed by a cap region (102) and by a sensor region (101) of semiconductor material. An air gap (107) extends between the sensor region (101) and the cap region (102; 103); a buried cavity (109) extends underneath the air gap, in the sensor region (101), and delimits a membrane (111) at the bottom. A through trench (110) extends within the sensor region (101) and laterally delimits a sensitive portion (121) housing the membrane, a supporting portion (120), and a spring portion (122), the spring portion connecting the sensitive portion (121) to the supporting portion (120). A channel (123) extends within the spring portion (122) and connects the buried cavity (109) to a face (101A) of the second region (101). The first air gap (107) is fluidically connected to the outside of the device, and the buried cavity (109) is isolated from the outside via a sealing region (106B) arranged between the sensor region (101) and the cap region (102).

    Abstract translation: 一种微电子机械压力传感器装置（100），其由帽区（102）和半导体材料的传感器区域（101）形成。 气隙（107）在传感器区域（101）和盖区域（102; 103）之间延伸; 埋入空腔（109）在传感器区域（101）中的气隙下方延伸，并在底部界定膜（111）。 贯穿沟槽（110）在传感器区域（101）内延伸并横向限定容纳薄膜的敏感部分（121），支撑部分（120）和弹簧部分（122），弹簧部分连接敏感部分 121）连接到支撑部分（120）。 通道（123）在弹簧部分（122）内延伸并且将掩埋腔（109）连接到第二区域（101）的面（101A）。 第一气隙107流体连接到装置的外部，并且掩埋腔109经由布置在传感器区域101和帽区域102之间的密封区域106B与外部隔离。 ）。

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