公开(公告)号：EP1217652B1

公开(公告)日：2003-09-24

申请号：EP00830834.8

申请日：2000-12-20

Applicant: STMicroelectronics S.r.l.

Inventor： Camalleri, Cateno Marco ,  Lorenti, Simona ,  Cali', Denise ,  Vasquez, Patrizia ,  Ferla, Giuseppe

IPC: H01L21/331 ,  H01L29/73

CPC classification number: H01L29/66272 ,  H01L21/2256 ,  H01L29/7311

公开(公告)号：EP1217652A1

公开(公告)日：2002-06-26

申请号：EP00830834.8

申请日：2000-12-20

Applicant: STMicroelectronics S.r.l.

Inventor： Camalleri, Cateno Marco ,  Lorenti, Simona ,  Cali', Denise ,  Vasquez, Patrizia ,  Ferla, Giuseppe

IPC: H01L21/331 ,  H01L29/73

CPC classification number: H01L29/66272 ,  H01L21/2256 ,  H01L29/7311

Abstract: A method of controlling the quantity and uniformity of distribution of bonded oxygen atoms at the interface between the polysilicon and the monocrystalline silicon consists in carrying out, after having loaded the wafer inside the heated chamber of the reactorand evacuated the chamber of the LPCVD reactor under nitrogen atmosphere, a treatment of the wafer with hydrogen at a temperature generally comprised between 500 and 1200°C and at a vacuum generally comprised between 0.1 Pa and 60000 Pa, and preferably at a temperature of 850°C ± 15°C and at a vacuum of 11000 Pa ± 2000 Pa, for a time generally comprised between 0.1 and 120 minutes, and most preferably between 0.5 and 1.5 minutes, in order to remove any and all the oxygen that may have combined with the silicon on the surface of the monocrystalline silicon during the loading inside the heated chamber of the reactor even if it is done under a nitrogen flux.
After such a hydrogen treatment, another treatment is carried out substantially under the same vacuum conditions and at a temperature generally comprised between 700 and 1000°C with nitrogen protoxide (N 2 O) for a time generally comprised between 0.1 and 120 minutes, preferably between 0.5 and 1.5 minutes.
The treatment with nitrogen protoxide (N 2 O) at such a vacuum and temperature conditions causes a relatively slow oxidation of the monocrystalline silicon and allows an effective control of the amount of oxygen at the interface and a great uniformity of distribution of it on the surface. The tunnel barrier characteristics in respect to the holes of the so created oxide film at the interface between the monocrystalline silicon and the polysilicon layer show an outstanding reproducibility.

Abstract translation: 在多晶硅和单晶硅之间的界面处控制键合氧原子的分布的数量和均匀性的方法包括在将晶片装入反应器的加热室内并在氮气下抽空LPCVD反应器的腔室 气氛中，在通常为500-1200℃的温度下，通常在0.1Pa和60000Pa之间的温度下，优选在850℃±15℃的温度下，用氢处理晶片， 真空度为11000Pa +/- 2000Pa，时间通常为0.1至120分钟，最优选为0.5至1.5分钟，以除去可能与表面上的硅组合的任何和全部氧 的单晶硅在反应器的加热室内加载期间即使在氮气通量下进行。 在这样的氢处理之后，基本上在相同的真空条件下和通常在700-1000℃的温度下用氮氧化丙烷（N 2 O）进行另外的处理，时间通常在0.1至120分钟之间，优选在0.5至 1.5分钟。 在这样的真空和温度条件下用氮氧化物（N 2 O）处理导致单晶硅的相对缓慢的氧化，并且允许有效地控制界面处的氧量并且在表面上具有很大的均匀分布。 相对于在单晶硅与多晶硅层之间的界面处所形成的氧化膜的孔的隧道势垒特性显示出突出的再现性。