公开(公告)号：EP1868247A1

公开(公告)日：2007-12-19

申请号：EP06425396.6

申请日：2006-06-13

Applicant: STMicroelectronics S.r.l.

Inventor： Cascino, Salvatore ,  Nicotra, Maria Concetta ,  Santangelo, Antonello

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/10 ,  H01L29/423 ,  H01L21/28

CPC classification number: H01L29/42376 ,  H01L21/28114 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/66484 ,  H01L29/66659 ,  H01L29/7831 ,  H01L29/7835

Abstract: MOS device (1) formed in a semiconductor body (2) having a first conductivity type and a surface (7) and housing a first current-conduction region (3) and a second current-conduction region (4), of a second conductivity type. The first and second current-conduction regions (3, 4) define between them a channel (5), arranged below a gate region (10), formed on top of the surface (7) and electrically insulated from the channel region (5). A conductive region (12) extends on top of a portion (5a) of the channel (5), adjacent to and insulated from the gate region only on a side thereof facing the first current-conduction region (3). The conductive region (12) is biased so as to modulate the current flowing in the channel (5).

Abstract translation: MOS器件（1）形成在具有第一导电类型的半导体本体（2）和表面（7）中，并且容纳第二导电区域（3）和第二电流传导区域（4） 类型。 第一和第二电流传导区域（3,4）在它们之间限定布置在栅极区域（10）下方的通道（5），形成在表面（7）的顶部上并且与沟道区域（5）电绝缘， 。 导电区域（12）在沟道（5）的一部分（5a）的顶部上延伸，仅在其面对第一电流传导区域（3）的一侧上与栅极区域相邻并与栅极区域绝缘。 导电区域（12）被偏置以便调制在通道（5）中流动的电流。

公开(公告)号：EP1635399A1

公开(公告)日：2006-03-15

申请号：EP04425671.7

申请日：2004-09-08

Applicant: STMicroelectronics S.r.l.

Inventor： Santangelo, Antonello ,  Cascino, Salvatore ,  Gervasi, Leonardo

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/41

CPC classification number: H01L29/7835 ,  H01L29/1045 ,  H01L29/1087 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/66659

Abstract: A lateral MOS device (1) is formed in a body (2) having a surface (7) and is formed by a semiconductor layer (40) of a first conductivity type; a drain region (10, 11) of a second conductivity type, formed in the semiconductor layer (40) and facing the surface (7); a source region (13) of the second conductivity type, formed in the semiconductor layer (40) and facing the surface (7); a channel (15) of the first conductivity type, formed in the semiconductor layer (40) between the drain region (10, 11) and the source region (13) and facing the surface (7); and an insulated gate region (20-22), formed on top of the surface (7) over the channel region (15). In order to improve the dynamic performance, a conductive region (23) extends only on one side of the insulated gate region (20-22), on top of the drain region (10, 11) but not on top of the insulated gate region.

Abstract translation: 横向MOS器件（1）形成在具有表面（7）的主体（2）中并且由第一导电类型的半导体层（40）形成; 形成在所述半导体层（40）中且面向所述表面（7）的第二导电类型的漏区（10,11）; 形成在所述半导体层（40）中并面向所述表面（7）的所述第二导电类型的源极区域（13）; 在所述漏极区域（10）和所述源极区域（13）之间的所述半导体层（40）中形成并面对所述表面（7）的第一导电类型的沟道（15）。 以及形成在通道区域（15）上方的表面（7）的顶部上的绝缘栅极区域（20-22）。 为了改善动态性能，导电区域（23）仅在绝缘栅极区域（20-22）的一侧上延伸，在漏极区域（10,11）的顶部上延伸，而不在绝缘栅极区域的顶部 。