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1.发明公开Emulated EEPROM memory device and corresponding method 有权Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren
公开(公告)号：EP0991081A1
公开(公告)日：2000-04-05
申请号：EP98203302.9
申请日：1998-09-30
Applicant: STMicroelectronics S.r.l.
Inventor： Peri, Maurizio , Brigati, Alessandro , Olivo, Marco
IPC: G11C16/06
CPC classification number: G11C16/102 , G11C16/16 , G11C2216/20
Abstract: The invention relates to a method and device to emulate the features of a EEPROM memory device of the type included into a memory macrocell (1) which is embedded into an integrated circuit comprising also a microcontroller and including a Flash EEPROM memory structure formed by a predetermined number of sectors (F0, F1, F2, F3, F4, F5), characterized in that at least two sectors (E0, E1) of the Flash memory structure are used to emulate EEPROM byte alterability.
Abstract translation: 本发明涉及一种用于模拟包括在存储器宏单元（1）中的类型的EEPROM存储器件的特征的方法和装置，该存储器宏单元嵌入到还包括微控制器的集成电路中，并且包括由预定的 扇区数（F0，F1，F2，F3，F4，F5），其特征在于闪存结构的至少两个扇区（E0，E1）用于模拟EEPROM字节的可变性。
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公开(公告)号：EP0668591B1
公开(公告)日：1999-10-20
申请号：EP94830074.4
申请日：1994-02-18
Applicant: STMicroelectronics S.r.l.
Inventor： Pascucci, Luigi , Padoan, Silvia , Golla, Carla Maria , Maccarrone, Marco , Olivo, Marco
CPC classification number: G11C7/02 , G11C7/1006 , G11C7/22 , G11C16/32
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3.发明授权Method for optimising a memory cell matrix for a semiconductor integrated microcontroller 失效一种用于优化用于半导体集成电路微控制器中的存储器单元阵列的方法
公开(公告)号：EP0837474B1
公开(公告)日：2005-02-02
申请号：EP97830239.6
申请日：1997-05-23
Applicant: STMicroelectronics S.r.l.
Inventor： Pelagalli, Sergio , Olivo, Marco
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4.发明授权Regulation circuit and method for the erasing phase of non-volatile memory cells 失效控制电路和擦除的非易失性存储器单元的方法
公开(公告)号：EP0668593B1
公开(公告)日：2001-09-26
申请号：EP94830077.7
申请日：1994-02-21
Applicant: STMicroelectronics S.r.l.
Inventor： Golla, Carla , Padoan, Silvia , Olivo, Marco
IPC: G11C16/06
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公开(公告)号：EP0991081B1
公开(公告)日：2005-11-30
申请号：EP98203302.9
申请日：1998-09-30
Applicant: STMicroelectronics S.r.l.
Inventor： Peri, Maurizio , Brigati, Alessandro , Olivo, Marco
IPC: G11C16/06
CPC classification number: G11C16/102 , G11C16/16 , G11C2216/20
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Patent Agency Ranking6.发明公开An error control method for a memory device, and a memory device implementing said error control method 审中-公开错误检查的存储装置和存储装置的方法用于应用该方法
公开(公告)号：EP1376358A1
公开(公告)日：2004-01-02
申请号：EP02425409.6
申请日：2002-06-20
Applicant: STMicroelectronics S.r.l.
Inventor： Olivo, Marco , Impieri, Filippo
IPC: G06F11/10
CPC classification number: G06F11/1052
Abstract: Described herein is an error control method for a memory device (1), comprising the steps of detecting whether a datum read in the memory device (1) is affected by error; upon detection of the presence of an error in the datum read, subjecting the datum read to an error correction operation; and upon detection of the absence of errors in the datum read, supplying the datum read directly on the outputs of the memory device (1) without subjecting it to an error correction operation.
Abstract translation: 描述为（1）包括：检测是否以下步骤的存储器装置中的差错控制方法在所述存储器设备（1）是通过误差影响读出的日期; 在检测到日期读取错误的情况下，使该日期在错误矫正手术读取的; 并且在检测到不存在所读取的日期的错误，而不会在错误校正操作对其进行供应对所述存储器设备（1）的输出直接读取的日期的。
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公开(公告)号：EP0678871B1
公开(公告)日：2000-05-31
申请号：EP94830124.7
申请日：1994-03-22
Applicant: STMicroelectronics S.r.l.
Inventor： Golla, Carla Maria , Olivo, Marco , Padoan, Silvia
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公开(公告)号：EP0661713B1
公开(公告)日：1999-06-09
申请号：EP93830537.2
申请日：1993-12-31
Applicant: STMicroelectronics S.r.l.
Inventor： Padoan, Silvia , Olivo, Marco , Golla, Carla
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9.发明授权Double-row address decoding and selection circuitry for an electrically erasable and programmable non-volatile memory device with redundancy, particularly for flash EEPROM devices 失效用于与冗余电可擦除和可编程的非易失性存储器设备，特别是用于快闪EEPROM器件双列Adressendekodierung-和选择电路
公开(公告)号：EP0658903B1
公开(公告)日：1999-04-28
申请号：EP93830504.2
申请日：1993-12-15
Applicant: STMicroelectronics S.r.l.
Inventor： Golla, Carla Maria , Olivo, Marco
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公开(公告)号：EP0665485B1
公开(公告)日：1998-10-07
申请号：EP94830022.3
申请日：1994-01-21
Applicant: STMicroelectronics S.r.l.
Inventor： Maccarrone, Marco , Olivo, Marco , Golla, Carla Maria
IPC: G05F3/26
CPC classification number: G05F3/262
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