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    Multichannel electronic ignition device with high voltage controller
    2.
    发明公开
    Multichannel electronic ignition device with high voltage controller 审中-公开
    ElektronischeMehrkanalzündvorrichtungmitHochspannungssteuergerät

    公开(公告)号：EP1465342A1

    公开(公告)日：2004-10-06

    申请号：EP03425202.3

    申请日：2003-04-01

    Applicant: STMicroelectronics S.r.l.

    Inventor： Torrisi, Giovanni Luca ,  Torres, Antonino ,  Liporace, Nicola Antonino

    IPC: H03K3/57

    CPC classification number: F02P7/035 ,  F02D2041/2051 ,  F02D2041/2075 ,  F02D2041/2082 ,  F02P3/0442 ,  F02P15/08 ,  F02P17/12 ,  F02P2017/121

    Abstract: A multichannel electronic-ignition control device, including a control circuit (10) and a plurality of driving stages (8), connected to the control circuit (10) and each having a respective high-voltage terminal (11a), for driving an inductive load (3, 3a); the control circuit (10) is provided with a plurality of control stages (17, 18), integrated in a single semiconductor body (16) and connected each to the high-voltage terminal (11a) of a respective driving stage (8).

    Abstract translation: 一种多通道电子点火控制装置，包括连接到控制电路（10）的控制电路（10）和多个驱动级（8），每个具有各自的高压端子（11a），用于驱动感应 负载（3,3a）; 控制电路（10）设置有多个控制级（17,18），其集成在单个半导体本体（16）中并且各自连接到各个驱动级（8）的高压端子（11a）。

    Circuit for dynamic control of a power transistor in applications for high voltage
    3.
    发明公开
    Circuit for dynamic control of a power transistor in applications for high voltage 有权
    Dynamische Steuerung eines Leistungstransistors bei Hochspannungsanwendungen

    公开(公告)号：EP1557560A1

    公开(公告)日：2005-07-27

    申请号：EP04425035.5

    申请日：2004-01-22

    Applicant: STMicroelectronics S.r.l.

    Inventor： Torres, Antonino ,  Patti, Davide

    IPC: F02P3/055 ,  H03K17/567

    CPC classification number: H03K17/0828 ,  F02D2041/2075 ,  F02P3/0435

    Abstract: The present invention relates to a circuit (20) for dynamic control of a power transistor in applications for high voltage and of the type wherein a power transistor (TR1) has a conduction terminal (C) connected to a load and a control terminal (G1) receiving a driving signal from a driver block (4) activated by a trigger signal (Vin) received on a circuit input terminal (IN1). Advantageously, the circuit (20) comprises a JFET component (TR2) inserted between the conduction (C) and control (G1) terminal of the power transistor (TR1) and equal to a resistance with non-linear feature.
    Moreover, the JFET component (TR2) is monolithically integrated in the structure of said power transistor (TR1).

    Abstract translation: 本发明涉及一种用于在高电压应用中动态控制功率晶体管的电路（20），其中功率晶体管（TR1）具有连接到负载的导通端（C）和控制端（G1 接收由在电路输入端子（IN1）上接收的触发信号（Vin）激活的驱动器块（4）的驱动信号。 有利地，电路（20）包括插入在功率晶体管（TR1）的导通（C）和控制（G1）端子之间并等于具有非线性特征的电阻的JFET部件（TR2）。 此外，JFET部件（TR2）被单片集成在所述功率晶体管（TR1）的结构中。

    Integrated power device with improved efficiency and reduced overall dimensions
    4.
    发明公开
    Integrated power device with improved efficiency and reduced overall dimensions 审中-公开
    Integriertes Leistungsbauelement mit verbesserter Effizienz und reduzierten Gesamtabmessungen

    公开(公告)号：EP1221718A1

    公开(公告)日：2002-07-10

    申请号：EP01830004.6

    申请日：2001-01-08

    Applicant: STMicroelectronics S.r.l.

    Inventor： Letor, Romeo ,  Torres, Antonino ,  Fragapane, Leonardo

    IPC: H01L25/16 ,  H01L27/02

    CPC classification number: H01L27/0248

    Abstract: The integrated power device (100) comprises a power transistor (2) made up of a first diode (25) and a second diode (26) which are connected together in series between a collector region (6) and emitter-contact region (14) of the power transistor (2) and define a common intermediate node (24). The power device (100) also comprises a control circuit (3) including a high-voltage region (30) bonded on the emitter-contact region (14) by means of an adhesive layer (108), and biasing means (109, 110, 111) connected between the common intermediate node (24) and the high-voltage region (30). The biasing means (109, 110, 111) comprise a contact pad (109) electrically connected to the common intermediate node (24), an electrical connection region (111) which is in electrical contact with the high-voltage region (30), and a wire (110) having a first end soldered on the contact pad (109) and a second end soldered on said electrical connection region (111).

    Abstract translation: 集成功率器件（100）包括由第一二极管（25）和第二二极管（26）构成的功率晶体管（2），它们串联在集电极区域（6）和发射极 - 接触区域（14）之间 ）并且限定公共中间节点（24）。 功率器件（100）还包括控制电路（3），该控制电路（3）包括通过粘合剂层（108）接合在发射极 - 接触区域（14）上的高压区域（30）和偏置装置（109,110 ，111）连接在公共中间节点（24）和高压区域（30）之间。 偏置装置（109,110,111）包括电连接到公共中间节点（24）的接触焊盘（109），与高压区域（30）电接触的电连接区域（111） 以及具有焊接在所述接触焊盘（109）上的第一端和焊接在所述电连接区域（111）上的第二端的导线（110）。

    Control circuit for an electronic driving device of inductive loads, in particular for a device with an input signal having, at the high logic state, non optimal voltage value
    6.
    发明公开
    Control circuit for an electronic driving device of inductive loads, in particular for a device with an input signal having, at the high logic state, non optimal voltage value 有权
    对于电感性负载，特别是用于在高逻辑状态的装置dessem输入信号的电子驱动器装置控制电路具有非最优电压值

    公开(公告)号：EP1548275A1

    公开(公告)日：2005-06-29

    申请号：EP03425763.4

    申请日：2003-11-28

    Applicant: STMicroelectronics S.r.l.

    Inventor： Torres, Antonino ,  Torrisi, Giovanni Luca

    IPC: F02P3/04 ,  H03K17/042

    CPC classification number: F02P3/04 ,  F02D2041/2017 ,  F02D2041/2075 ,  F02P3/0435 ,  H03K17/0406 ,  H03K17/04206 ,  H03K17/0828

    Abstract: A control circuit (6) for an electronic driving device (9) of inductive loads is described, comprising at least a control block (1, 10) activated by a trigger signal (V TRIGGER ) having at the high logic state non optimal voltage values and output-connected to a control terminal of a power element (TR1) of the electronic driving device (9).
    The control circuit also comprises an auxiliary current generator (A) capable of delivering a current (I AUX ) to be added to the current (I DRIV ) outputted by said control block (1, 10) to supply a driving current I GATE .

    Abstract translation: 的控制电路（6），用于在被描述感性负载的电子驱动装置（9），至少包括具有高逻辑状态的非最佳的电压值由一个触发信号（V触发）激活的控制块（1，10）和 输出连接到电子驱动装置（9）的功率元件（TR1）的控制端子。 能够提供的电流（IAUX）的控制电路，因此（A）被添加到当前（Idriv）由所述控制块（1，10）的输出以提供辅助电流发生器的驱动电流IGATE包括。

    Monolithically integrated power IGBT device (Insulated Gate Bipolar Transistor)
    9.
    发明公开
    Monolithically integrated power IGBT device (Insulated Gate Bipolar Transistor) 审中-公开
    Monolithisch integrierte Leistungs-IGBT Vorrichtung（双管晶体管隔离器Gate-Elektrode）

    公开(公告)号：EP1727203A1

    公开(公告)日：2006-11-29

    申请号：EP05425365.3

    申请日：2005-05-24

    Applicant: STMicroelectronics S.r.l.

    Inventor： Torres, Antonino ,  Sueri, Stefano ,  Patti, Davide

    IPC: H01L27/02 ,  H03K17/0814 ,  F02P3/04

    CPC classification number: F02P3/0435 ,  F02D2041/2058 ,  F02D2041/2075 ,  F02P3/02 ,  H03K17/08128

    Abstract: A power IGBT device is described being monolithically integrated and comprising an input terminal (I10) suitable to receive an input voltage (Vin) and an output terminal (O10) suitable to supply a current (Iout) with limited and predetermined highest value. Such IGBT device comprising an IGBT power element (2) inserted between said output terminal (O10) and a supply reference (GND) and having a control terminal (15) connected to the input terminal (110) by means of a control circuit (12) comprising at least a transistor (18) inserted between the control terminal (15) and the supply reference (GND) and a resistive element (Rc) inserted between the input terminal (I10) and the control terminal (15).

    Abstract translation: 电力IGBT器件被描述为单片集成的，并且包括适于接收输入电压（Vin）的输入端（I10）和适于提供具有有限和预定最高值的电流（Iout）的输出端（O10）。 这种IGBT器件包括插入在所述输出端子（O10）和电源基准（GND）之间并且具有通过控制电路（12）连接到输入端子（110）的控制端子（15）的IGBT功率元件（2） ）包括插入在控制端子（15）和供电基准（GND）之间的至少一个晶体管（18）和插入在输入端子（I10）和控制端子（15）之间的电阻元件（Rc）。

    Integrated circuit and method of soft thermal shut down for power devices
    10.
    发明公开
    Integrated circuit and method of soft thermal shut down for power devices 有权
    Integrierte Schaltung und Methode zur programmierten ThermalabschaltungfürStarkstromgeräte

    公开(公告)号：EP1229234A1

    公开(公告)日：2002-08-07

    申请号：EP01830066.5

    申请日：2001-02-01

    Applicant: STMicroelectronics S.r.l.

    Inventor： Spampinato, Sergio Tommaso ,  Torres, Antonino

    IPC: F02D41/20 ,  G05F3/30 ,  H03K5/08

    CPC classification number: G05F3/225 ,  F02D41/20 ,  H03K17/0826 ,  H03K2017/0806

    Abstract: A thermal control circuit for an integrated power transistor comprises a current generator, controlled by a turn on signal, a sensing resistance in series to the power transistor, a current limiter acting when the voltage drop on the sensing resistance overcomes a certain value, a current amplifier coupled to the output node of the controlled current generator, outputting a drive current that is injected on a control node of the power transistor, and a soft thermal shut down circuit whose conduction state is enhanced as the temperature increases for reducing the drive current.
    The circuit controls the voltage on the power transistor in a more effective manner than known devices because the current amplifier has a variable gain controlled by the state of conduction of the soft thermal shut down circuit.
    The improvement substantially consists in reducing progressively the gain of the current amplifier as the temperature of the integrated circuit increases, until a thermal equilibrium is reached.

    Abstract translation: 用于集成功率晶体管的热控制电路包括由导通信号控制的电流发生器，与功率晶体管串联的感测电阻，当感测电阻上的电压降克服一定值时起作用的限流器，电流 耦合到受控电流发生器的输出节点的放大器，输出被注入到功率晶体管的控制节点上的驱动电流;以及软热关断电路，其导通状态随着温度升高而降低驱动电流。 该电路以比已知的器件更有效的方式控制功率晶体管上的电压，因为电流放大器具有由软热关断电路的导通状态控制的可变增益。 该改进实质上在于随着集成电路的温度升高而逐渐降低电流放大器的增益，直到达到热平衡。

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