Abstract:
An electron emitter comprises a single, cubic lanthanum hexaboride crystal (1) mounted in a supporting material heatable by heating wires (3), the arrangement being such that a naturally grown edge (2) between two crystal faces, preferably (1,0,0) faces, forms a line emitter which has high length to radius and width ratios, preferably of at least 50 : 1.
Abstract:
Method of manufacturing a dispenser cathode having an emissive surface (51) extending substantially perpendicularly to an axis (52), which emissive surface (51) of the cathode is surrounded by a conductive collar (68) which extends from the edge of the emissive surface substantially parallel to the axis (52). By making the part of the emissive surface (51) which adjoins the collar (68) to be less porous than the reaminder of the emissive surface by sealing the pores with a high energy beam or by locally squeezing the pores during a drawing process of a holder around the emissive body (60), the anode current, especially in a diode gun, can be further reduced.
Abstract:
A dispenser cathode and method for making the same are disclosed wherein a mixture of tungsten and aluminate powders are pressed by a die into a foil sleeve. A heater assembly can be attached to the back of the pellet for activating the emissive material. An impregnated cathode therefore can be manufactured in a few hours by relatively inexpensive processing techniques.
Abstract:
A method of fabricating a self-aligned gated electron field emitter. An oxidation process forms an optimized, atomically sharp needle (18) in a silicon substrate (12). The needle and surrounding planar area is conformally coated with silicon dioxide (22). A dielectric layer (24) is deposited and planarized over the needle. The dielectric layer is partially etched away to expose the coated needle. The exposed silicon dioxide needle is isotropically etched so as to undercut the dielectric layer. A gate metal is directionally deposited so as to form a gate layer (26) on the planar portions of the dielectric layer that is electrically isolated from the gate metal (28) deposited on the needle. The metal on the needle is anodically etched by applying the potential only to the silicon and not to the gate layer. Electro-plating may recoat the needle with another metal (30). The silicon substrate may be replaced by a glass substrate (42) on which is deposited a polysilicon or amorphous silicon layer (40).
Abstract:
A method and apparatus for depositing emitter material (3) on a wire cathode by means of electrodeposition. An amount (13) of a suspension comprising an alkaline-earth compound is transferred by a drop holder (11) which is positioned around the wire (2), by movement in a direction transverse to a longitudinal axis of the wire (2), whereafter an electric voltage is applied to the drop holder (11) and the wire (2) to deposit the emitter material (3) on the wire (2), after which the drop holder (11) is withdrawn from the wire (2) again. During the electrodeposition process, the drop holder (11) and the wire (2) can be moved with respect to each other along sections of the wire (2) where the emitter material (3) has to be deposited.
Abstract:
Porous agglomerates (14) are made from pure tungsten by sintering fine particles together and mechnically breaking down the mass to form some agglomerates (14) considerably larger than the particles. These agglomerates (14) are mixed with fine iridium powder (18) and sintered to form a porous mass. The mass is machined to the cathode shapes (10') and impregnated with an alkaline earth aluminate (18). The large agglomerates (14) alloy with the iridium only on their outer surface. Their pure tungsten interior provides the surfaces to reduce the alkaline earth oxide to the metal which activates the cathode.