公开(公告)号：DE60041741D1

公开(公告)日：2009-04-23

申请号：DE60041741

申请日：2000-02-21

Applicant: MEMSCAP

Inventor： HILL EDWARD ,  WOOD ROBERT L ,  MAHADEVAN RAMASWAMY

IPC: B81B3/00 ,  H01H1/00 ,  H02N10/00

Abstract: MEMS structures are provided that compensate for ambient temperature changes, process variations, and the like, and can be employed in many applications. These structures include an active microactuator adapted for thermal actuation to move in response to the active alteration of its temperature. The active microactuator may be further adapted to move in response to ambient temperature changes. These structures also include a temperature compensation element, such as a temperature compensation microactuator or frame, adapted to move in response to ambient temperature changes. The active microactuator and the temperature compensation element move cooperatively in response to ambient temperature changes. Thus, a predefined spatial relationship is maintained between the active microactuator and the associated temperature compensation microactuator over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator. In an alternative embodiment wherein the active microactuator is suspended within a frame above the substrate, the MEMS structure holds at least a portion of the active microactuator in a fixed position relative to the substrate over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator. By actively altering the temperature of the active microactuator, the active microactuator can be controllably moved relative to the temperature compensation microactuator and/or the underlying substrate. Related methods of compensating for the effects of ambient temperature variations are provided. Further, an overplating technique is provided for precisely sizing a gap defined within a MEMS structure.

公开(公告)号：IL172720D0

公开(公告)日：2006-04-10

申请号：IL17272005

申请日：2005-12-20

Applicant: MEMSCAP INC

IPC: B81B20100101 ,  H01H1/00 ,  H01H36/00 ,  H01H50/00

Abstract: A magnetic switch includes a substrate having a recess therein. A rotor or rotors are provided on the substrate. The rotor includes a tail portion that overlies the recess, and a head portion that extends on the substrate outside the recess. The rotor may be fabricated from ferromagnetic material, and is configured to rotate the tail in the recess in response to a changed magnetic field. First and second magnetic switch contacts also are provided that are configured to make or break electrical connection between one another in response to rotation of the tail in the recess, in response to the changed magnetic field. Related operation and fabrication methods also are described.

公开(公告)号：FR2835963B1

公开(公告)日：2006-03-10

申请号：FR0201611

申请日：2002-02-11

Applicant: MEMSCAP

Inventor： HEDSTROM MARTIN

IPC: H01H59/00 ,  B81B7/02 ,  H01P1/12

公开(公告)号：DE60206793D1

公开(公告)日：2005-11-24

申请号：DE60206793

申请日：2002-06-16

Applicant: MEMSCAP CROLLES ,  LICORNE MEYLAN LAB

Inventor： KARAM JEAN-MICHEL ,  VIVIANT ERIC

IPC: A61B5/00 ,  A61B5/103 ,  A61B5/107

Abstract: The invention relates to a device for analysing the physico-chemical properties of a cutaneous surface comprising: a group of sensors which are assembled at an acquisition zone (4), opposite which the cutaneous surface to be analysed is positioned; and a processing unit (1) which is interfaced with the group of sensors, said unit being equipped with analysis means that can be used to determine certain physico-chemical properties of the cutaneous surface to be analysed using signals produced by said group of sensors.

公开(公告)号：FR2859035B1

公开(公告)日：2005-11-18

申请号：FR0350449

申请日：2003-08-22

Applicant: MEMSCAP

Inventor： HELIN PHILIPPE ,  RANSCH PASCAL

IPC: G06K19/063 ,  G06K19/14 ,  G06K19/16 ,  G06K19/06 ,  G06K1/12 ,  G09F3/02

公开(公告)号：DE60105479T2

公开(公告)日：2005-08-25

申请号：DE60105479

申请日：2001-03-19

Applicant: MEMSCAP CROLLES

Inventor： HILL EDWARD ARTHUR ,  DHULER VIIJAYAKUMAR RUDRAPPA ,  COWEN ALLEN BRUCE ,  MAHADEVAN RAMASWAMY ,  WOOD ROBERT L

IPC: B81B7/02 ,  H01H1/00 ,  H01H61/02 ,  G02B6/26

Abstract: Microelectromechanical actuators include a substrate, spaced apart supports on the substrate and a thermal arched beam that extends between the spaced apart supports and that further arches upon heating thereof, for movement along the substrate. One or more driven arched beams are coupled to the thermal arched beam. The end portions of the driven arched beams move relative to one another to change the arching of the driven arched beams in response to the further arching of the thermal arched beam, for movement of the driven arched beams. A driven arched beam also includes an actuated element at an intermediate portion thereof between the end portions, wherein a respective actuated element is mechanically coupled to the associated driven arched beam for movement therewith, and is mechanically decoupled from the remaining driven arched beams for movement independent thereof. By allowing independent movement of the actuated elements, a variety of actuator applications may be provided wherein it is desired to actuate multiple elements in the same or different directions. For example, first and second driven arched beams may extend parallel to one another, such that the actuated elements that are mechanically coupled to the first and second driven arched beams move in a same direction by the further arching of the thermal arched beam. In other embodiments, the first and second arched beams arch away from each other, such that the actuated elements that are coupled to the first and second driven arched beams move in opposite directions by the further arching of the thermal arched beam. In yet other embodiments, the first and second driven arched beams arch toward one another, such that the actuated elements that are mechanically coupled to the first and second driven arched beams move in opposite directions by the further arching of the thermal arched beam.

公开(公告)号：FR2853645A1

公开(公告)日：2004-10-15

申请号：FR0304651

申请日：2003-04-14

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: B81B3/00 ,  H01H59/00 ,  B81C1/00

Abstract: Production of an electronics component including a microelectromechanical structure comprising a metal part that is attached to a substrate through an anchoring zone and has a movable zone comprises forming a stack of alternating silicon oxide, silicon carbide, silicon oxide and silicon carbide layers on the substrate, forming the anchoring zone through the stack, forming the movable zone on top of the stack, and etching the upper silicon dioxide layer with hydrogen fluoride. Production of an electronics component including a microelectromechanical structure comprising a metal part that is attached to a substrate through an anchoring zone (20) and has a movable zone (24) mechanically separated from the substrate comprises forming a stack of alternating silicon oxide, silicon carbide, silicon oxide and silicon carbide layers on the substrate, forming the anchoring zone through the stack, forming the movable zone on top of the stack, and etching the upper silicon dioxide layer with anhydrous hydrogen fluoride gas.

公开(公告)号：FR2833411B1

公开(公告)日：2004-02-27

申请号：FR0115960

申请日：2001-12-11

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01F17/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04 ,  H01L27/08 ,  H01L49/00

Abstract: An electronic component is fabricated by: (a) incorporating an inductive microcomponent comprising stack(s) of layer of material (10a) having a low relative permittivity; (b) depositing an upper resin layer; (c) etching the resin layer to form channels defining the turns; (d) depositing a copper diffusion barrier layer; and (e) planarizing until the upper resin layer is revealed. Fabrication of an electronic component, incorporating an inductive microcomponent placed on top of a substrate and connected by a metal contact(s), comprises: (a) depositing on the substrate a stack(s) of layer of material having a low relative permittivity and a layer forming a hard mask (12a); (b) making an aperture in the hard mask layer placed in the upper position, vertically in line with the metal contacts; (c) etching the layers of material having a low relative permittivity and the subjacent hard mask layers down to the metal contact to form a via; (d) depositing a layer forming a copper diffusion barrier; (e) depositing a copper initiating layer; (f) depositing, electrolytically, a copper layer filling the via and covering the initiating layer; (g) planarizing the upper face until the upper hard mask layer is exposed; (h) depositing an upper resin layer formed from a material having a low relative permittivity; (i) etching the resin layer to form channels defining the turns of the inductive microcomponent and of possible other conductive features; (j) depositing a copper diffusion barrier layer; (k) depositing a copper initiating layer; (l) depositing electrolytically on the channels; and (m) planarizing until the upper resin layer is revealed.

公开(公告)号：FR2832852B1

公开(公告)日：2004-02-27

申请号：FR0115456

申请日：2001-11-29

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/12 ,  H01L23/15 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04 ,  H01L27/08 ,  H01F17/00

公开(公告)号：FR2842830A1

公开(公告)日：2004-01-30

申请号：FR0209459

申请日：2002-07-25

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  C23C16/40 ,  B32B18/00

Abstract: High permittivity multilayer structure comprises a number of superposed layers, each of thickness less than 500 Å. The layer structure includes two layers based on a mixed oxide derived from titanium oxide (TiO 2) and tantalum pentoxide (Ta 2O 5) separated by a layer based on a mixed oxide derived from at least hafnium dioxide (HfO 2) and alumina (Al 2O 3). Preferred Features: The mixed oxide derived from at least hafnium dioxide (HfO2) and alumina (Al2O3) can also include zirconium dioxide (ZrO 2) in its composition. At least one layer situated between the layers of mixed oxide derived from titanium oxide and tantalum pentoxide and the outer part of the structure comprises a mixed oxide derived from at least two materials selected from hafnium dioxide (HfO 2), alumina (Al 2O 3), zirconium oxide (ZrO 2), titanium dioxide (TiO 2), and tantalum pentoxide (Ta 2O 5). The thickness of each layer is 1-200 Å, preferably 1-100 Å, and most preferably 1-50 Å. At least one of the external layers is alumina (Al 2O 3). Each layer is deposited by atomic layer deposition (ALD).