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公开(公告)号：KR100419233B1
公开(公告)日：2004-02-21
申请号：KR1020020012985
申请日：2002-03-11
Applicant: 삼성전자주식회사
IPC: B81C1/00
CPC classification number: B81B3/0078 , B81B2201/014 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C2201/0107 , B81C2201/014 , H01H59/0009
Abstract: A method for fabricating a MEMS device having a fixing part, driving part, electrode part, and contact parts on a substrate. A driving electrode is formed on the substrate, and then an insulation layer is formed thereon. The insulation layer is patterned, and the regions of the insulation layer in which the fixing part and the contact parts are formed are etched. A metal layer is formed on the substrate. The metal layer is planarized down to the insulation layer, and the driving electrode is formed. A sacrificial layer is formed on the substrate, and a groove-shaped space is formed in a region in which the fixing part is formed. A MEMS structure layer is formed on the sacrificial layer. Sidewalls are formed in the groove-shaped space, and the fixing part and driving part are formed, leaving the sacrificial layer underneath the fixing part.
Abstract translation: 一种用于制造MEMS器件的方法，所述MEMS器件在基板上具有固定部分，驱动部分，电极部分和接触部分。 在基板上形成驱动电极，然后在其上形成绝缘层。 对绝缘层进行图案化，并且蚀刻其中形成有固定部分和接触部分的绝缘层的区域。 在衬底上形成金属层。 金属层被平坦化到绝缘层，并形成驱动电极。 牺牲层形成在基板上，并且在形成固定部的区域中形成槽状空间。 MEMS结构层形成在牺牲层上。 在槽形空间中形成侧壁，形成固定部分和驱动部分，在固定部分的下面留下牺牲层。 ＆lt;图像＆GT;
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公开(公告)号：KR100414213B1
公开(公告)日：2004-01-07
申请号：KR1020010044449
申请日：2001-07-24
Applicant: 삼성전자주식회사
IPC: G01R31/02
CPC classification number: G01R31/2853
Abstract: In the present invention, an apparatus of testing a leakage protection reliability of an integrated circuit interconnection. The apparatus has at least one comb-like pattern, a serpentine-like pattern and means of applying a bias to the patterns and forms a maximum field region at an interconnection formed around a via, i.e., at the end of a tooth portion composing the comb-like pattern. In one structure of the present invention, the comb-like pattern is formed at one level, and the serpentine-like pattern has a plurality of unit parts corresponding to the tooth portions, respectively, and connection parts connecting the neighboring two unit parts. Each of the unit parts is formed at the same level with the comb-like pattern and spaced apart from the tooth portion by a minimum design length according to a design rule. The unit part has vias formed through an interlayer dielectric layer at the both ends of a tooth parallel part, two tooth parallel parts connected with the vias, respectively, and a length parallel part electrically connecting two tooth parallel parts.
Abstract translation: 在本发明中，测试集成电路互连的漏电保护可靠性的装置。 该装置具有至少一个梳状图案，蜿蜒状图案和对图案施加偏压并且在通孔周围形成的互连处形成最大场区的装置，即在组成该齿的齿部的端部处 梳状图案。 在本发明的一个结构中，梳状图案形成在一个水平面上，并且蛇形状图案具有分别与齿部对应的多个单位部分和连接相邻的两个单位部分的连接部分。 根据设计规则，每个单元部分与梳状图案形成在同一水平面上并且与齿部分分开最小设计长度。 单元部分具有通过在齿平行部分的两端处的层间介电层形成的通孔，分别与通路连接的两个齿平行部分和电连接两个齿平行部分的长度平行部分。
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公开(公告)号：KR1020030073432A
公开(公告)日：2003-09-19
申请号：KR1020020012985
申请日：2002-03-11
Applicant: 삼성전자주식회사
IPC: B81C1/00
CPC classification number: B81B3/0078 , B81B2201/014 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C2201/0107 , B81C2201/014 , H01H59/0009
Abstract: PURPOSE: A MEMS device and a method for fabricating the same are provided to improve reliability of the MEMS device with achieving a stable driving characteristic of the MEMS device. CONSTITUTION: A driving electrode layer(320) is formed on a substrate(310) by patterning a driving electrode. A planar mold is formed on the substrate(310) having the driving electrode layer(320). The planar mold functions as an insulating layer(330). After patterning the insulating layer(330), the insulating layer(330) formed in a predetermined area, in which a fixing section and a contact section are formed, is etched. Then, a metal layer(340) is formed on the substrate(310) including the fixing section and contact section.
Abstract translation: 目的：提供一种MEMS器件及其制造方法，以通过实现MEMS器件的稳定的驱动特性来提高MEMS器件的可靠性。 构成：通过对驱动电极进行构图，在基板（310）上形成驱动电极层（320）。 在具有驱动电极层（320）的基板（310）上形成平面模具。 平面模具用作绝缘层（330）。 在图案化绝缘层（330）之后，形成在其中形成有固定部分和接触部分的预定区域中的绝缘层（330）被蚀刻。 然后，在包括固定部和接触部的基板（310）上形成金属层（340）。
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公开(公告)号：KR100387241B1
公开(公告)日：2003-06-12
申请号：KR1020010028689
申请日：2001-05-24
Applicant: 삼성전자주식회사
IPC: H01H59/00
Abstract: PURPOSE: An RF MEMS(Micro Electro Mechanical System) switch is provided to reduce an insertion loss when an RF switch is turned on and improve a signal separation characteristic when the RF switch is turned off. CONSTITUTION: An input signal line(112) and two output signal lines(114) are formed on a dielectric substrate(100). An RF ground is formed on both sides of the input signal line(112) and the output signal lines(114). A gap(116) is formed between the input signal line(112) and the output signal lines(114). A contact plate(130) is formed to an upper direction of the gap(116). A driving electrode(140) is formed at both sides of the gap(116). A plurality of anchors(142) are formed on the driving electrode(140). A plurality of driving beams(144) are extended to an opposite direction of the anchors(142). An insulating portion(160) is inserted between the driving beams(144) and the contact plate(130). An insulating layer is formed on an RF ground(120) contacted with the driving beams(144). The RF grounds(120) are connected each other with a bridge(150). The bridge(150) is formed with a pillar(152) and a beam(154).
Abstract translation: 目的：提供RF MEMS（微机电系统）开关，以减少RF开关打开时的插入损耗，并改善RF开关关闭时的信号分离特性。 构成：在电介质基板（100）上形成输入信号线（112）和两条输出信号线（114）。 在输入信号线（112）和输出信号线（114）的两侧形成RF地。 在输入信号线（112）和输出信号线（114）之间形成间隙（116）。 接触板（130）形成在间隙（116）的上方。 驱动电极（140）形成在间隙（116）的两侧。 在驱动电极（140）上形成多个锚（142）。 多个驱动梁（144）延伸到锚（142）的相反方向。 在驱动梁（144）和接触板（130）之间插入绝缘部分（160）。 在与驱动梁（144）接触的RF接地（120）上形成绝缘层。 RF接地（120）通过桥（150）相互连接。 桥（150）形成有柱（152）和梁（154）。
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公开(公告)号：KR1020030009816A
公开(公告)日：2003-02-05
申请号：KR1020010044450
申请日：2001-07-24
Applicant: 삼성전자주식회사
IPC: G01R31/02
CPC classification number: H01L22/34 , G01R31/2853 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: An apparatus of testing insulation reliability of integrated circuit wiring is provided to estimate a trouble point of a semiconductor device when an electric field is concentrated at a peripheral wiring of a multi-layer via. CONSTITUTION: A plurality of branch patterns(120) are formed on the same layer as an axis pattern(110) and are diverged into a vertical direction to the axis pattern. A comb pattern(100) is formed vertically to the branch patterns and the axis pattern at each end of the branch patterns, and has a plurality of comb via holes(130) formed so as to penetrate an interlayer insulation film. Two branch parallel parts(310) are formed parallel with the branch patterns. An axis parallel part(320) is parallel with the axis pattern, and is used to connect ends of the two branch parallel parts. A plurality of serpentine unit parts(340) are vertical to the two branch parallel parts at ends of the two branch parallel parts, and has serpentine via holes(330) formed so as to penetrate the interlayer insulation film. A serpentine pattern(300) is parallel with the axis pattern, and is formed on another wiring layer spaced apart by the branch parallel part and the interlayer insulation film. The serpentine pattern has a connection part(350) for connecting two units and is connected to two via holes formed adjacent to the units. A voltage applying means applies a voltage to the comb pattern and the serpentine pattern.
Abstract translation: 目的：提供一种测试集成电路布线的绝缘可靠性的装置，以便在电场集中在多层通孔的外围布线时估计半导体器件的故障点。 构成：多个分支图案（120）形成在与轴图案（110）相同的层上，并且分散成与轴图案的垂直方向。 梳状图案（100）垂直于分支图案和分支图案的每一端处的轴图案形成，并且具有形成为穿透层间绝缘膜的多个梳状通孔（130）。 两个分支平行部分（310）与分支图形平行地形成。 轴平行部分（320）与轴图案平行，用于连接两个分支平行部分的端部。 多个蛇形单元部分（340）在两个分支平行部分的端部处垂直于两个分支平行部分，并且具有形成为穿透层间绝缘膜的蛇形通孔（330）。 蛇形图案（300）与轴图案平行，并且形成在由分支平行部分和层间绝缘膜间隔开的另一布线层上。 蛇形图案具有用于连接两个单元的连接部分（350），并且连接到与单元相邻形成的两个通孔。 电压施加装置向梳形图案和蛇形图案施加电压。
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Patent Agency Ranking
公开(公告)号：KR100327495B1
公开(公告)日：2002-03-15
申请号：KR1020000026472
申请日：2000-05-17
Applicant: 삼성전자주식회사
IPC: H03H9/54
Abstract: 본 발명은 자기장의 세기를 조절하여 중심 주파수를 정밀하게 조정할 수 있도록 하는 주파수 트리밍 코일을 갖는 벌크 음파 공진기 및 필터(Bulk acoustic wave resonators and filters having a frequency trimming coil)를 기재한다. 본 발명에 따른 주파수 트리밍 코일을 갖는 벌크 음파 공진기 및 필터는, 반도체 기판; 반도체 기판 상에 형성된 하부 전극판; 하부 전극판 상에 형성된 압전체 박막; 압전체 박막 상에 형성된 상부 전극판; 및 두 전극판 중 적어도 어느 한 전극판의 가장자리에 압전체 박막에 자기장을 인가하기 위한 자기장 유도 코일;을 구비함으로써, 제조 공정시 형성된 압전체 박막에 두께 차이가 발생하더라도 자기장 유도 코일로서 압전체 박막에 자기장을 인가하여 원하는 주파수의 신호에 공진되거나 원하는 주파수의 신호를 필터링 할 수 있도록 그 사용 주파수를 정밀하게 트리밍하여 사용한다.
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公开(公告)号：KR1020010105733A
公开(公告)日：2001-11-29
申请号：KR1020000026472
申请日：2000-05-17
Applicant: 삼성전자주식회사
IPC: H03H9/54
Abstract: The disclosed ring clamp has two half-shells (10, 20), each having a first extremity with a bearing pad (12, 22) extending outwards, as well as a second extremity equipped with one of the elements (14, 22) of the means of connection used to connect the two second extremities of the half- shells removably. The section of said half-shells is substantially U- shaped, with the branches of the 'U' extending towards the interior and having the capacity to operate in conjunction with the protruding support surfaces on the extremities of the two tubes. The clamp comprises a tightening screw (30), the post (32) of which traverses the pierced holes of the bearing pads (12, 22). The length (L) of the post is at least substantially equal to the radius (R) of the ring clamp when closed, and said post is inserted loosely into the holes of the bearing pads. The elements (14, 24) of said means of connection are designed to unite in order to bring together the second half-shell extremities, or to separate in order to maintain said extremities apart while the post of the screw remains in place in the holes of the bearing pads.
Abstract translation: 所公开的环形夹具具有两个半壳（10,20），每个具有第一末端，其具有向外延伸的轴瓦（12,22），以及配备有元件（14,22）之一的第二末端 用于连接半壳的两个第二末端的连接装置可拆卸。 所述半壳的部分基本上为U形，其中U形分支向内部延伸，并具有与两根管的末端上的突出的支撑表面一起操作的能力。 所述夹具包括紧固螺钉（30），所述紧固螺钉（30）穿过所述轴承瓦块（12,22）的穿孔。 柱的长度（L）至少基本上等于闭合时环形夹具的半径（R），并且所述柱松动地插入轴承瓦的孔中。 所述连接装置的元件（14,24）被设计成联合在一起以将第二半壳末端组合在一起，或者为了保持所述末端分开而分离，同时螺钉的柱保持在孔中 的轴瓦。
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公开(公告)号：KR1020000061886A
公开(公告)日：2000-10-25
申请号：KR1019990011267
申请日：1999-03-31
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A cavity resonator is provided to reduce a phase noise of an electromagnetic wave radiated MMIC(Monolithic Microwave Integrated Circuit) VCO(Voltage Controlled Oscillator) for accepting a silicone micromachined cavity in a pressure control oscillator of a reflection type. CONSTITUTION: A cavity resonator includes a cavity(500), a microstrip line(400) and a slot(210). The cavity(500) is made by a fine processing of a silicone and a micro electro mechanical system instead of a metal cavity and a lower thin film of the cavity with a rectangular parallelepiped type is made of a gold thin film and the thin film(200) of a ground plane covers the top of the lower thin film of the cavity. A film as the micro electro mechanical system is inserted between microstrip line(400) and the thin film(200) of top ground plane to maintain a direct way. And in an 1-slot cavity resonator, a signal from VCO is sent through the gold strip line(400) an electromagnetic wave mode in the cavity is made by an electromagnetic wave coupling of the strip line(400) and the cavity(500). In this coupling a slot(210) is used and the stable electromagnetic mode is sent to the strip line through the slot and is radiated through the antenna.
Abstract translation: 目的：提供一种空腔谐振器，以减少电磁波辐射MMIC（单片微波集成电路）VCO（压控振荡器）的相位噪声，用于接收反射型压力控制振荡器中的硅树脂微加工腔。 构成：空腔谐振器包括空腔（500），微带线（400）和狭槽（210）。 空腔（500）通过硅树脂和微机电系统的精细加工而不是金属空腔制成，并且具有长方体形状的空腔的下薄膜由金薄膜和薄膜（ 接地平面的200）覆盖空腔的下薄膜的顶部。 将微电子机械系统的薄膜插入到微带线（400）和顶部接地平面的薄膜（200）之间以保持直接的方式。 并且在1槽空腔谐振器中，来自VCO的信号通过金带线（400）发送，空腔中的电磁波模式由带状线（400）和空腔（500）的电磁波耦合构成， 。 在该耦合中，使用槽（210），并且通过该槽将稳定的电磁模式发送到带状线并通过天线辐射。
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公开(公告)号：KR1019990084330A
公开(公告)日：1999-12-06
申请号：KR1019980015989
申请日：1998-05-04
Applicant: 삼성전자주식회사
Abstract: 본 발명은 실리콘을 전기화학적으로 부식시켜 얻은 수십나노미터 크기의 기공 실리콘(porous silicon)을 응용하여 제조한 기공 실리콘을 이용한 단일전자 트랜지스터(single electron transistor) 및 그 제조 방법에 관한 것이다. 본 발명에 따른 기공 실리콘을 이용한 단일전자 트랜지스터는 하부가 이산화 실리콘(SiO
2 )으로 구성된 실리콘 기판(SOI)에 직경 5 nm 이하의 기공 실리콘들을 HF-based 용액 내에서 전기화학적 부식에 의해 제조하여 단일전자 트랜지스터의 아일런드(island)로 활용하고, 금속 혹은 불순물이 주입 혹은 도핑된 실리콘으로 소스(source), 드레인(drain) 및 게이트(gate)를 형성함으로써, 아일런드 및 터넬장벽 형성이 보다 용이하여 대량 생산이 가능하며 또한 아일런드 크기를 산화로에서 조절할 수 있으므로 상온 작동이 가능한 단일전자 트랜지스터를 쉽게 제작할 수 있다.-
公开(公告)号：KR1019990069116A
公开(公告)日：1999-09-06
申请号：KR1019980003152
申请日：1998-02-04
Applicant: 삼성전자주식회사
Inventor： 김정우
IPC: H01L21/027
Abstract: 본 발명은 금속 단전자 소자의 패턴으로 사용되는 티타늄 박막의 패턴 형성후 감광막 제거에 관한 것이다. 본 발명에 따른 단일 전자 소자 제작을 위한 감광막 제거 방법은 티타늄의 물질 친화력으로 인하여 생기는 감광막 제거의 어려움을 해결하기 위해 산소 플라즈마 애슁(plasma ashing) 공정을 이용하여 감광막을 제거하고, 산소와 반응을 일으킨 산화 티타늄은 황산을 이용하여 제거함으로써 포토레지스트가 남지않은(photoresist-free) 티타늄 박막을 얻는다.
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