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公开(公告)号:KR101393703B1
公开(公告)日:2014-05-14
申请号:KR1020120038553
申请日:2012-04-13
Applicant: 한국기계연구원
Abstract: 본 발명에 따른 기판, 기판 위에 위치하는 굴절층, 굴절층 위에 위치하는 제1 전극, 제1 전극 위에 형성되어 있는 발광층, 발광층 위에 형성되어 있는 제2 전극을 포함하고, 굴절층은 기판으로부터 제1 전극으로 갈수록 굴절율이 점진적으로 증가 또는 감소한다.
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公开(公告)号:KR1020140023778A
公开(公告)日:2014-02-27
申请号:KR1020120090231
申请日:2012-08-17
Applicant: 한국기계연구원
CPC classification number: Y02E10/549 , Y02P70/521 , H01L51/42
Abstract: A solar cell according to the present invention includes a substrate, a first electrode which is formed on the substrate, a metal oxide layer which is formed on the first electrode and includes a protrusion part, an active layer which is formed on the metal oxide layer, a buffer layer which is formed on the active layer, and a second electrode which is formed on the buffer layer.
Abstract translation: 根据本发明的太阳能电池包括基板,形成在基板上的第一电极,形成在第一电极上并包括突出部分的金属氧化物层,形成在金属氧化物层上的有源层 形成在有源层上的缓冲层和形成在缓冲层上的第二电极。
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公开(公告)号:KR101358246B1
公开(公告)日:2014-02-07
申请号:KR1020120012040
申请日:2012-02-06
Applicant: 한국기계연구원
Abstract: 본 발명은 고밀도 나노패턴 형성방법에 관한 것으로서, 본 발명에 따른 고밀도 나노패턴 형성방법은 기판으로부터 돌출되는 복수개의 볼록부를 형성하는 볼록부 형성단계; 상기 볼록부의 양측벽에 증착되어 상호 이격되는 복수개의 나노패턴을 형성하는 나노패턴 형성단계; 상기 나노패턴이 형성되는 기판을 몰드로 하여 상기 나노패턴에 대응되는 함몰패턴을 가지는 임프린팅 스탬프를 제작하는 스탬프 제작단계; 상기 임프린팅 스탬프 상에 형성되는 함몰패턴의 폭을 증가시키는 동시에 이웃하는 함몰패턴 간의 이격거리를 감소시키는 함몰패턴 제어단계;를 포함하되, 상기 함몰패턴 제어단계에서 제작되는 임프린팅 스탬프를 이용하여 상기 볼록부 형성단계 및 상기 나노패턴 형성단계를 재수행함으로써 고밀도의 나노패턴을 형성하는 것을 특징으로 한다.
이에 의하여, 미세선폭의 나노패턴을 높은 밀도로 형성할 수 있는 고밀도 나노패턴 형성방법이 제공된다.-
公开(公告)号:KR1020130137441A
公开(公告)日:2013-12-17
申请号:KR1020120061067
申请日:2012-06-07
IPC: H01L21/027
CPC classification number: H01L21/0274 , B82B1/001 , B82B3/0038
Abstract: A core-shell nanowire is provided. A core-shell nanowire array according to the present invention includes: a nanowire which is parallel to a substrate; and a coating layer which is coated on the upper side of the nanowire. According to the present invention, a core-shell nanowire array structure is formed after a nanowire array structure is formed using an existing lithography with all of the nanoscales like photolithography, an imprint, and the likes. [Reference numerals] (AA) Produce a first nano wire;(BB) Coat the first nano wire with a second material;(CC) Produce a core-shell nano wire
Abstract translation: 提供核 - 壳纳米线。 根据本发明的核 - 壳纳米线阵列包括:平行于衬底的纳米线; 以及涂覆在纳米线的上侧的涂层。 根据本发明,在使用具有所有纳米尺度的现有光刻形成纳米线阵列结构之后形成核 - 壳纳米线阵列结构,如光刻,印记等。 (附图标记)(AA)制造第一纳米线;(BB)用第二材料覆盖第一纳米线;(CC)生产核 - 壳纳米线
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公开(公告)号:KR1020130115846A
公开(公告)日:2013-10-22
申请号:KR1020120038553
申请日:2012-04-13
Applicant: 한국기계연구원
CPC classification number: H01L22/12 , H01L21/02164 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02282
Abstract: PURPOSE: An organic light emitting display device and a method for manufacturing the same are provided to easily form a refraction layer by a solution process, thereby simplifying a manufacturing process. CONSTITUTION: A refraction layer (300) is located on a substrate. A first electrode (710) is located on the refraction layer. A light emitting layer (720) is formed on the first electrode. A second electrode (730) is formed on the light emitting layer. The refractive index of the refraction layer gradually increases or decreases from the substrate to the first electrode.
Abstract translation: 目的:提供一种有机发光显示装置及其制造方法,通过溶液法容易地形成折射层,从而简化制造工序。 构成:折射层(300)位于基底上。 第一电极(710)位于折射层上。 在第一电极上形成发光层(720)。 在发光层上形成第二电极(730)。 折射层的折射率从衬底到第一电极逐渐增加或减小。
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公开(公告)号:KR1020130071152A
公开(公告)日:2013-06-28
申请号:KR1020110138507
申请日:2011-12-20
Applicant: 한국기계연구원
CPC classification number: Y02E10/50
Abstract: PURPOSE: A recessed metal pattern forming method is provided to easily make a recessed metal pattern by successively laminating a photopolymer resin layer and a thermoplastic resin layer. CONSTITUTION: A recessed metal pattern forming method is as follows. A thermoplastic resin layer is laminated on a photopolymer resin layer(S120). The thermoplastic resin layer is patterned. A recessed area is formed on the photopolymer resin layer(S130). A metal layer is deposited on the upper side of the thermoplastic resin layer and within the recessed area of the photopolymer resin layer(S140). The metal layer, which is laminated on the thermoplastic resin layer and on the upper side of the thermoplastic resin layer, is removed(S150). [Reference numerals] (AA) Start; (BB) End; (S110) Photopolymer resin layer laminating step; (S111) Application step; (S112) Pre-hardened step; (S120) Thermoplasticity resin layer laminating step; (S130) Complex printing step; (S131) Heating/pressurizing step; (S132) Hardening step; (S140) Metal layer laminating step; (S150) Removing step
Abstract translation: 目的:提供凹陷金属图案形成方法,通过依次层压光聚合物树脂层和热塑性树脂层来容易地形成凹陷的金属图案。 构成:凹陷金属图案形成方法如下。 在光聚合物树脂层上层压热塑性树脂层(S120)。 图案化热塑性树脂层。 在光聚合物树脂层上形成凹陷区域(S130)。 在热塑性树脂层的上侧和光聚合物树脂层的凹陷区域内沉积金属层(S140)。 除去热塑性树脂层和热塑性树脂层的上侧层叠的金属层(S150)。 (附图标记)(AA)开始; (BB)结束; (S110)光聚合物树脂层层叠工序; (S111)应用步骤; (S112)预硬化工序; (S120)热塑性树脂层层叠工序; (S130)复印机步骤; (S131)加热/加压步骤; (S132)硬化步骤; (S140)金属层层叠工序; (S150)拆卸步骤
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公开(公告)号:KR101269917B1
公开(公告)日:2013-05-31
申请号:KR1020110005152
申请日:2011-01-18
Applicant: 한국기계연구원
Abstract: 본발명은하나의마스터스탬프를이용하여제작한복수개의플렉시블몰드를이용하여대면적나노템플레이트를제작함으로서특히디스플레이용기판에나노임프린트기술을적용함에있어서공정의양산성을향상시킬수 있도록하는멀티스탬프를이용한대면적나노템플레이트제작방법에관한것으로, 하나의마스터스탬프를사용하여복수개의플렉시블몰드를제작하는준비단계; 대면적기판상에써멀레지스트(thermal resist)를코팅하는코팅단계; 코팅된상기기판위에복수개의상기플렉시블몰드를패턴면을하단으로하여이웃하는몰드를서로겹치게배열하는정렬단계; 정렬된상기기판과상기플렉시블몰드를고온, 고압으로가열하여패턴을전사하는임프린트단계; 임프린트된면에대해폴리머복제하여대면적나노템플레이트를완성하는복제단계;를포함하는것을특징으로한다.
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公开(公告)号:KR1020120082266A
公开(公告)日:2012-07-23
申请号:KR1020110003659
申请日:2011-01-13
Applicant: 한국기계연구원
CPC classification number: B29C33/424 , B29C33/38 , B29C59/022 , B29C2033/426 , G03F7/0002
Abstract: PURPOSE: A method for producing nano-templates having a large area through side bonding is provided to manufacture a large area template which size an operator wants by controlling the number of unit stamps and the area of a substrate. CONSTITUTION: A method for producing nano-templates having a large area through side bonding is as follows. A plurality of unit stamps(10) is manufactured. The unit stamps are arranged on a substrate(20) to be contacted with each other. The unit stamps are absorbed in the substrate by vacuum-pumping a patterned surface formed on the unit stamps. Bonding resin(30) is injected and cured on the upper portion of the unit stamps. A polymer replication for the side-bonded stamp is applied to side bonded stamps for forming a large area template(40).
Abstract translation: 目的:提供一种具有大面积通过侧面接合的纳米模板的制造方法,通过控制单位印章的数量和基板的面积来制造操作者想要的尺寸的大面积模板。 构成:通过侧面接合的面积大的纳米模板的制造方法如下。 制造多个单位印章(10)。 单元印章被布置在彼此接触的基板(20)上。 通过对形成在单位印章上的图案化表面进行真空抽吸,将单位印记吸收在基板中。 粘合树脂(30)在单位印章的上部注入并固化。 用于侧粘合印模的聚合物复制物被施加到用于形成大面积模板(40)的侧边贴合的邮票上。
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公开(公告)号:KR1020120071067A
公开(公告)日:2012-07-02
申请号:KR1020100132656
申请日:2010-12-22
Applicant: 한국기계연구원
CPC classification number: B29C33/3842 , B29C33/40 , C08J5/005 , G03F7/0002
Abstract: PURPOSE: A manufacturing method of a stamp for nano-imprinting is provided to manufacture stamps which have desired physical properties by surface treating the same without damaging the stamps. CONSTITUTION: A manufacturing method of a stamp for nano-imprinting comprises a step of processing a substrate which has polymer layer with nano-scaled fine patterns using a monomer or polymer which is represented by chemical formula 1 or 2 . Chemical formula 1 is as follows: A-B-D, and chemical formula 2 is as follows: A-D. In the chemical formula 1 or 2, A indicates a fluorocarbon group or hydro carbon group. B indicates a hydro carbon group or Si(R1)2-O-n-Si(R1)2-R2. R1 is independently an alkyl group with 1-10 carbons, R2 is an alkylene group with 1-10 carbons, and n indicates integers of 1-100. D is an acrylate group, methacrylate group, vinyl ether group, amine radical (R3 here is NR32 H, and CH3 or C6H5), epoxy radical, glycidyl group, glycidyl ether group, isocyanate radical (NCO), ester radical(R4 here COOR4 H or CH3), or thiol group(SH).
Abstract translation: 目的:提供用于纳米压印的印模的制造方法,以通过对其进行表面处理来制造具有所需物理性质的印章而不损坏印章。 构成:用于纳米压印的印模的制造方法包括使用由化学式1或2表示的单体或聚合物来处理具有纳米级精细图案的聚合物层的基板的步骤。 化学式1如下:A-B-D,化学式2如下:A-D。 在化学式1或2中,A表示碳氟基或碳氢基。 B表示氢碳基团或Si(R1)2-O-n-Si(R1)2-R2。 R1独立地为具有1-10个碳的烷基,R2是具有1-10个碳的亚烷基,n表示1-100的整数。 D为丙烯酸酯基,甲基丙烯酸酯基,乙烯基醚基,胺基(R3为NR32H,CH3或C6H5),环氧基,缩水甘油基,缩水甘油醚基,异氰酸酯基(NCO),酯基(R4为COOR4 H或CH 3)或硫醇基(SH)。
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