公开(公告)号：KR100091959B1

公开(公告)日：1995-11-22

申请号：KR1019920023353

申请日：1992-12-04

Applicant: 한국전자통신연구원

Inventor： 이성재 ,  박경완 ,  김경옥

IPC: H01L39/00

公开(公告)号：KR100089997B1

公开(公告)日：1995-10-09

申请号：KR1019920006000

申请日：1992-04-10

Applicant: 한국전자통신연구원

Inventor： 박경완 ,  박경호 ,  이성재 ,  추혜용 ,  최상수

IPC: H01L29/73

公开(公告)号：KR1019950011032B1

公开(公告)日：1995-09-27

申请号：KR1019920020985

申请日：1992-11-10

Applicant: 한국전자통신연구원

Inventor： 이성재 ,  박경완 ,  박경호 ,  장순호

IPC: H01L29/80

Abstract: The device consists of a semi-insulating semiconductor substrate, a buffer layer which is undoped by impurities that exist on some top parts of the semiconductor substrate, a spacer layer in which 2 dimensional electron gas is formed, a carrier source layer which is doped by impurities that is formed on the top part of the spacer layer, a cap layer which is formed on the top part of the carrier source layer, a gate electrode which is formed on the top part of the cap layer, and a source and a drain electrodes which are formed to be contacted with the 2 dimensional electron gas.

Abstract translation: 该器件包括半绝缘半导体衬底，不存在于半导体衬底的一些顶部上的杂质的缓冲层，形成二维电子气的隔离层，由 在间隔层的顶部形成的杂质，形成在载体源层的顶部的盖层，形成在盖层的顶部的栅电极，以及源极和漏极 形成为与二维电子气接触的电极。

公开(公告)号：KR1019940001475A

公开(公告)日：1994-01-20

申请号：KR1019920011451

申请日：1992-06-29

Applicant: 한국전자통신연구원

Inventor： 이성재 ,  박경완 ,  박경호

IPC: H01L39/00