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公开(公告)号：KR100460201B1
公开(公告)日：2004-12-08
申请号：KR1020020018878
申请日：2002-04-08
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: PURPOSE: A method for forming a substrate for manufacturing an SiGe/Si HFET(Hetero-junction Field Effect Transistor) and the substrate thereof are provided to be capable of obtaining a thin buffer layer having good device characteristics by carrying out an in-situ heat treatment. CONSTITUTION: After forming the first silicon germanium layer(12) having an inhomogeneous germanium constitution on a silicon epitaxial layer(10), a heat treatment is carried out at the resultant structure by in-situ. Then, the second silicon germanium layer(14) having a homogeneous germanium, is formed on the resultant structure. A silicon cap layer(16) is formed on the second silicon germanium layer. At the time, the first and second silicon germanium layer are used as a buffer layer.
Abstract translation: 目的：提供一种形成用于制造SiGe / Si HFET（异质结场效应晶体管）的衬底及其衬底的方法，其能够通过执行原位热获得具有良好器件特性的薄缓冲层 治疗。 构成：在硅外延层（10）上形成具有不均匀锗组成的第一硅锗层（12）之后，通过原位在所得结构上进行热处理。 然后，在所得结构上形成具有均匀锗的第二硅锗层（14）。 硅盖层（16）形成在第二硅锗层上。 此时，第一和第二硅锗层被用作缓冲层。
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公开(公告)号：KR100425579B1
公开(公告)日：2004-04-03
申请号：KR1020010044056
申请日：2001-07-21
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: PURPOSE: A method for forming a silicon germanium layer using different kinds of sources according to a composition ratio of germanium is provided to improve a characteristic of the silicon germanium layer by changing easily the composition ratio of the germanium of silicon germanium layer. CONSTITUTION: A forming method of a silicon germanium layer includes a process for forming an Si1-xGex layer on a substrate within a process chamber having temperature of 150 to 400 degrees centigrade by using a unit atomic layer epitaxy method. In the forming process of the Si1-xGex layer, a silicon source is supplied to an upper surface of the substrate. The first purge gas is supplied to the upper surface of the substrate. A germanium source is supplied to the upper surface of the substrate. The second purge gas is supplied to the upper surface of the substrate. A hydrogen radical is supplied to the upper surface of the substrate. The different kinds of sources are supplied according to a value of x of the Si1-xGex layer.
Abstract translation: 目的：提供一种根据锗的组成比使用不同种源形成硅锗层的方法，以通过容易地改变硅锗层的锗的组成比来改善硅锗层的特性。 构成：硅锗层的形成方法包括通过使用单元原子层外延方法在温度为150至400摄氏度的处理室内在衬底上形成Si 1-x Ge x层的工艺。 在Si1-xGex层的形成过程中，硅源被供应到衬底的上表面。 第一吹扫气体被供应到基板的上表面。 锗源被提供给衬底的上表面。 第二吹扫气体被供应到基板的上表面。 氢基被提供给基板的上表面。 根据Si1-xGex层的x值提供不同种类的源。
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公开(公告)号：KR101849267B1
公开(公告)日：2018-04-17
申请号：KR1020120125499
申请日：2012-11-07
Applicant: 한국전자통신연구원
IPC: H01L31/042 , H01L31/0749 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 본발명의실시예에따른박막태양전지는기판상에형성된후면전극, 상기후면전극상에형성된광 흡수층, 상기광 흡수층상에형성된버퍼층, 상기버퍼층상에형성된전면투명전극, 상기전면투명전극의가장자리상에형성되어상기전면투명전극의일부상면을노출시키는그리드전극, 및상기일부상면이노출된상기전면투명전극의상면을덮는반사방지막을포함하되, 상기버퍼층은티타늄산화물(TiO)로이루어진다.
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公开(公告)号：KR1020150143258A
公开(公告)日：2015-12-23
申请号：KR1020140176133
申请日：2014-12-09
Applicant: 한국전자통신연구원
Inventor： 임정욱
CPC classification number: G02F1/15 , G02F1/153 , G02F1/157 , G02F2001/1502 , G02F2001/1504
Abstract: 본발명의일 실시예에따른광변색유리는단파장의광에서가시광투과도가감소하고장파장의광에서가시광투과도가증가하는광변색층, 광변색층의일면상에제공되어광변색층을향해입사되는광 중단파장의광만투과시키는단파장투과층, 광변색층의대항하는다른일면상에제공되어광변색층을향해입사되는광의파장을장파장으로변환시키는파장변환층, 혹은광변색층을향해입사되는광 중장파장의광만투과시키는장파장투과층을포함한다. 광변색층의가시광투과도는광변색층의대항하는양면으로광의입사방향을통해조절할수 있다. 광변색층에따라다양한색의구현이가능하며, 단파장투과층의적외선차단으로인해단열기능을겸할수 있다.
Abstract translation: 根据本发明的实施例，光致变色玻璃包括：在长波长的光中可见光的透过率降低并且可见光的透射率在长波长的光中增加的光致变色层; 设置在光致变色层的一个表面上的短波长透射层，仅透射入射到光致变色层的光的短波长光; 以及设置在与光致变色层相反的另一个表面上的波长转换层，以将入射到光致变色层的光的波长转换成长波长，或长波长透射层，以仅透射长的光 - 从入射到光致变色层的光的波长。 光致变色层的可见光的透射率可以通过光的入射方向控制到光致变色层的两个相对表面。 因此，光致变色玻璃可以根据光致变色层实现各种颜色，并且由于短波长透射层的红外阻挡而具有热绝缘功能。
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公开(公告)号：KR101573029B1
公开(公告)日：2015-12-03
申请号：KR1020110136575
申请日：2011-12-16
Applicant: 한국전자통신연구원
IPC: H01L31/0445 , H01L31/075 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 본발명은박막태양전지및 그제조방법에관한것으로, 기판, 상기기판상에배치된제1 n형불순물반도체막과제1 p형불순물반도체막사이에수소함유량이연속적으로변하는제1 비정질진성반도체막이삽입된제1 셀, 상기제1 n형불순물반도체막과인접한금속전극, 및상기제1 p형불순물반도체막과인접한투명전극을포함한다. 상기제1 비정질진성반도체막의상기수소함유량은광이입사되는쪽에배치되는상기제1 p형불순물반도체막과의제1 계면으로부터상기광이입사되는쪽과반대되는쪽에배치되는상기제1 n형불순물반도체막과의제2 계면으로갈수록연속적으로작아진다.
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Patent Agency Ranking
公开(公告)号：KR1020140122164A
公开(公告)日：2014-10-17
申请号：KR1020130127993
申请日：2013-10-25
Applicant: 한국전자통신연구원
IPC: H01L31/042
CPC classification number: Y02E10/50 , H01L31/042
Abstract: 본 발명은 박막 태양전지의 구조를 제공한다. 이 박막 태양전지의 구조는 제 1 기판; 상기 제 1 기판 상에 제공된 제 1 전극; 상기 제 1 전극 상에 제공된 p-형 반도체층; 상기 P-형 반도체층 상에 제공된 제 1 완충층; 상기 제 1 완충층 상에 제공된 광흡수 영역; 상기 광흡수 영역 상에 제공된 제 2 완충층; 상기 제 2 완충층 상에 제공된 n-형 반도체층; 상기 n-형 반도체층 상에 제공된 제 2 전극; 및 상기 제 2 전극 상에 제 2 기판을 포함하며, 상기 광흡수 영역은 실리콘층, 상기 실리콘층 상의 제 1 층, 및 상기 제 1 층 상의 제 2 층을 포함한다.
Abstract translation: 本发明提供薄膜太阳能电池的结构。 薄膜太阳能电池的结构包括第一基板，设置在第一基板上的第一电极，设置在第一电极上的p型半导体层，设置在p型上的第一缓冲层 半导体层，设置在第一缓冲层上的光吸收区域，设置在光吸收区域上的第二缓冲层，设置在第二缓冲层上的n型半导体层，设置在第二缓冲层上的第二电极 在n型半导体层上，以及设置在第二电极上的第二基板。 光吸收区域包括硅层，位于硅层上的第一层和位于第一层上的第二层。
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公开(公告)号：KR1020140100646A
公开(公告)日：2014-08-18
申请号：KR1020130013441
申请日：2013-02-06
Applicant: 한국전자통신연구원
IPC: H01L31/042
CPC classification number: Y02E10/50 , H01L31/042
Abstract: A solar cell according to an embodiment of the present invention may comprise: a semiconductor substrate including a silicon crystal; a first immobilization layer, a second immobilization layer, and a first semiconductor layer which are stacked in order on a first surface of the semiconductor substrate; a third immobilization layer, a fourth immobilization layer, and a second semiconductor layer which are stacked in order on a first electrode layer, a first electrode pattern, and a second surface of the semiconductor substrate; and a second electrode layer and a second electrode pattern. The first to fourth immobilization layer may contain intrinsic amorphous silicon. The second immobilization layer has a higher crystallinity than the first immobilization layer, and the fourth immobilization layer has a higher crystallinity than the third immobilization layer. The solar cell can improve the efficiency and lifetime.
Abstract translation: 根据本发明的实施例的太阳能电池可以包括：包括硅晶体的半导体衬底; 第一固定层，第二固定层和第一半导体层，其顺序层叠在半导体基板的第一表面上; 第三固定层，第四固定层和第二半导体层，其顺序层叠在半导体基板的第一电极层，第一电极图案和第二表面上; 以及第二电极层和第二电极图案。 第一至第四固定层可以含有本征非晶硅。 第二固定层具有比第一固定层更高的结晶度，第四固定层具有比第三固定层更高的结晶度。 太阳能电池可以提高效率和寿命。
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公开(公告)号：KR1020130123060A
公开(公告)日：2013-11-12
申请号：KR1020120046184
申请日：2012-05-02
Applicant: 한국전자통신연구원
IPC: H01L31/042
CPC classification number: Y02E10/50 , H01L31/042
Abstract: A solar cell according to one embodiment of the present invention comprises a substrate; a first electrode on the substrate; a second electrode on the first electrode; a light absorption layer between the first electrode and the second electrode; and a copper-oxide thin film in contact with at least one surface of the first electrode and the second electrode. The present invention can make various and detailed color by controlling the thickness of the copper-oxide thin film and an oxygen ratio. Furthermore, the present invention improves the light efficiency of the solar cell by providing anti-reflection films at the same time according to the positions.
Abstract translation: 根据本发明的一个实施例的太阳能电池包括基板; 基板上的第一电极; 第一电极上的第二电极; 在第一电极和第二电极之间的光吸收层; 以及与所述第一电极和所述第二电极的至少一个表面接触的氧化铜薄膜。 本发明可以通过控制氧化铜薄膜的厚度和氧气比来形成各种详细的颜色。 此外，本发明通过根据位置同时提供抗反射膜来提高太阳能电池的光效率。
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公开(公告)号：KR1020130034334A
公开(公告)日：2013-04-05
申请号：KR1020110098294
申请日：2011-09-28
Applicant: 한국전자통신연구원
IPC: E06B3/677 , H01L31/042
CPC classification number: C03C27/06 , E06B3/6612 , H01L31/0488 , Y02B10/10 , Y02E10/50 , Y10T156/10
Abstract: PURPOSE: A vacuum window including a solar cell and a manufacturing method thereof are provided to prevent the temperature of a solar cell plate from being increased using a glass including high infrared light reflectivity and by separating the solar cell plate from a plate glass. CONSTITUTION: A vacuum window including a solar cell comprises a first and a second plate glass(201,203), a vacuum layer(205), and a solar cell plate(207). The first plate glass and the second plate glass are connected in vacuum, and the solar cell plate is formed on a second plate glass surface. The solar cell plate is separated from the first plate glass. The first plate glass is formed with a low emissivity glass including high infrared light reflectivity. The solar cell plate is formed as a semi transmission type and is comprised of inorganic materials such as silicon, CIGS, and CdTe. The second plate glass comprises a second plate glass(209) in the opposite direction to the vacuum layer, and an inert gas is injected between the plate glasses.
Abstract translation: 目的：提供一种包括太阳能电池的真空窗及其制造方法，以防止使用包括高红外光反射率的玻璃和通过将太阳能电池板与平板玻璃分离来提高太阳能电池板的温度。 构成：包括太阳能电池的真空窗包括第一和第二平板玻璃（201,203），真空层（205）和太阳能电池板（207）。 第一平板玻璃和第二平板玻璃在真空中连接，太阳能电池板形成在第二平板玻璃表面上。 太阳能电池板与第一平板玻璃分离。 第一平板玻璃由包括高红外光反射率的低辐射玻璃形成。 太阳能电池板形成为半透射型，由无机材料如硅，CIGS和CdTe组成。 第二平板玻璃包括与真空层相反的方向的第二平板玻璃（209），并且在平板玻璃之间注入惰性气体。
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公开(公告)号：KR101221870B1
公开(公告)日：2013-01-15
申请号：KR1020090055020
申请日：2009-06-19
Applicant: 한국전자통신연구원
IPC: H01L31/055 , H01L31/042
CPC classification number: Y02E10/52
Abstract: 태양 전지를 제공한다. 이 태양 전지는 p형 도펀트 영역 및 n형 도펀트 영역을 포함하는 광전 변환층, 및 광전 변환층의 제1 면 상에 배치된 파장 변환층을 포함한다. 파장 변환층은 태양광내 제1 파장을 갖는 입사 성분을 제2 파장을 갖는 투과 성분으로 변환시킨다.
Abstract translation: 目的：提供光伏电池以通过增加对光伏层的辐射强度来最小化阳光的损失。 构成：太阳能电池包括光电转换层（110），波长转换层（120），第一电极和第二电极。 光电转换层具有彼此面对的第一面和第二面，并且包括p型掺杂剂区域和n型掺杂剂区域。 波长转换层布置在光电转换层的第一侧上，并将具有第一波长的入射分量转换为具有第二波长的穿透分量。 第一电极介于光电转换层和波长转换层之间。
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