Abstract:
Sensor packages and manners of formation are described. In an embodiment, a sensor package includes a supporting die characterized by a recess area and a support anchor protruding above the recess area. A sensor die is bonded to the support anchor such that an air gap exists between the sensor die and the recess area. The sensor die includes a sensor positioned directly above the air gap.
Abstract:
In some embodiments, a method and/or a system may include an integrated circuit. The integrated circuit may include a semiconductor die. The integrated circuit may include a plurality of wiring layers. At least one metal-insulator-metal (MIM) capacitor may be formed within the plurality of wiring layers. The integrated circuit may include a circuit. The circuit may include at least an inductor and a voltage regulator which, with the MIM capacitor, forms a voltage regulator for the semiconductor die. The circuit may be coupled substantially below at least a portion of the MIM capacitor in the plurality of layers. The circuit may be electrically coupled to the capacitor through the plurality of wiring layers. The integrated circuit may include a plurality of electrical connectors, the plurality of electrical connectors coupled to the second surface at points separate from an area of the second surface that is occupied by the circuit.
Abstract:
A finger biometric sensor assembly may include a finger biometric sensor integrated circuit (IC) die having a finger sensing area and a cover layer aligned with the finger sensing area. The finger biometric sensor may also include a direct bonding interface between the finger biometric sensor and the cover layer.
Abstract:
Packages and methods of formation are described. In an embodiment, a package includes a redistribution layer (RDL) formed directly on a top die, and a bottom die mounted on a back surface of the RDL.
Abstract:
A semiconductor package includes a processor die (e.g., an SoC) and one or more memory die (e.g., DRAM) coupled to a ball grid array (BGA) substrate. The processor die and the memory die are coupled to opposite sides of the BGA substrate using terminals (e.g., solder balls). The package may be coupled to a printed circuit board (PCB) using one or more terminals positioned around the perimeter of the processor die. The PCB may include a recess with at least part of the processor die being positioned in the recess. Positioning at least part of the processor die in the recess reduces the overall height of the semiconductor package assembly. A voltage regulator may also be coupled to the BGA substrate on the same side as the processor die with at least part of the voltage regulator being positioned in the recess a few millimeters from the processor die.
Abstract:
Vertically stacked system in package structures are described. In an embodiment, a package includes a first level molding and fan out structure, a third level molding and fan out structure, and a second level molding and fan out structure between the first and third levels. The second level molding and fan out structure includes back-to-back facing die, with a front surface of each die bonded to a redistribution layer.
Abstract:
A semiconductor package includes a processor die (e.g., an SoC) and one or more memory die (e.g., DRAM) coupled to a ball grid array (BGA) substrate. The processor die and the memory die are coupled to opposite sides of the BGA substrate using terminals (e.g., solder balls). The package may be coupled to a printed circuit board (PCB) using one or more terminals positioned around the perimeter of the processor die. The PCB may include a recess with at least part of the processor die being positioned in the recess. Positioning at least part of the processor die in the recess reduces the overall height of the semiconductor package assembly. A voltage regulator may also be coupled to the BGA substrate on the same side as the processor die with at least part of the voltage regulator being positioned in the recess a few millimeters from the processor die.
Abstract:
Fanout wafer level packages (FOWLPs) and methods of formation are described. In an embodiment, a package includes a first routing layer, a first die on a top side of the first routing layer, and a first molding compound encapsulating the first die on the first routing layer. A first plurality of conductive pillars extends from a bottom side of the first routing layer. A second die is on a top side of a second routing layer, and the first plurality of conductive pillars is on the top side of the routing layer. A second molding compound encapsulates the first molding compound, the first routing layer, the first plurality of conductive pillars, and the second die on the second routing layer. In an embodiment, a plurality of conductive bumps (e.g. solder balls) extends from a bottom side of the second routing layer.
Abstract:
Packages and 3D die stacking processes are described. In an embodiment, a package includes a second level die hybrid bonded to a first package level including a first level die encapsulated in an oxide layer, and a plurality of through oxide vias (TOVs) extending through the oxide layer. In an embodiment, the TOVs and the first level die have a height of about 20 microns or less.
Abstract:
Sensor packages and manners of formation are described. In an embodiment, a sensor package includes a supporting die characterized by a recess area and a support anchor protruding above the recess area. A sensor die is bonded to the support anchor such that an air gap exists between the sensor die and the recess area. The sensor die includes a sensor positioned directly above the air gap.