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    INTEGRATED CAPACITIVE MICROFLUIDIC SENSORS METHOD AND APPARATUS
    91.
    发明专利
    INTEGRATED CAPACITIVE MICROFLUIDIC SENSORS METHOD AND APPARATUS 未知

    公开(公告)号：CA2519233A1

    公开(公告)日：2004-10-07

    申请号：CA2519233

    申请日：2004-03-17

    Applicant: CALIFORNIA INST OF TECHN

    Inventor： XIE JUN ,  TAI YU-CHONG ,  SHIH JASON

    IPC: G01N27/22 ,  G01N27/447 ,  G01D5/24 ,  B81C1/00 ,  B81B7/02 ,  G01L9/12

    Abstract: A microfluidic device and method for capacitive sensing. The device includes a fluid channel including an inlet at a first end and an outlet at a second en d, a cavity region coupled to the fluid channel, and a polymer based membrane coupled between the fluid channel and the cavity region. Additionally, the device includes a first capacitor electrode coupled to the membrane, a secon d capacitor electrode coupled to the cavity region and physically separated fr om the first capacitor electrode by at least the cavity region, and an electric al power source coupled between the first capacitor electrode and the second capacitor electrode and causing an electric field at least within the cavity region. The polymer based membrane includes a polymer.

    METHOD AND RESULTING DEVICE FOR FABRICATING ELECTRET MATERIALS ON BULK SUBSTRATES
    92.
    发明专利
    METHOD AND RESULTING DEVICE FOR FABRICATING ELECTRET MATERIALS ON BULK SUBSTRATES 未知

    公开(公告)号：AU2003238881A1

    公开(公告)日：2003-12-22

    申请号：AU2003238881

    申请日：2003-06-04

    Applicant: CALIFORNIA INST OF TECHN

    Inventor： BOLAND JUSTIN ,  TAI YU-CHONG

    IPC: H02N1/08

    Abstract: An electret device. The device has a thickness of substrate material having a contact region. An electrically floating conducting region is formed overlying the thickness of substrate material. The floating conducting region is free from physical contact with the contact region. A protective layer is formed overlying the floating conductive layer. The protective layer has a surface region and seals the floating conducting region. The thickness of substrate material, floating conducting region, and protective layer form a sandwiched structure having a charge density of at least 1x10-4 Coulombs/m2 and a peak to peak charge uniformity of 5% and less.

    Thin film electret microphone
    98.
    发明专利
    Thin film electret microphone 未知

    公开(公告)号：AU2923397A

    公开(公告)日：1997-11-07

    申请号：AU2923397

    申请日：1997-04-18

    Applicant: CALIFORNIA INST OF TECHN

    Inventor： TAI YU-CHONG ,  HSU TSENG-YANG ,  HSIEH WEN H

    IPC: H04R31/00 ,  H04R19/01 ,  H04R25/00 ,  H01G7/02

    Abstract: An electret formed by micro-machining technology on a support surface, including a self-powered electret sound transducer, preferably in the form of a microphone, formed by micro-machining technology. Each microphone is manufactured as a two-piece unit, comprising a microphone membrane unit and a microphone back plate, at least one of which includes an electret formed by micro-machining technology. When juxtaposed, the two units form a microphone that can produce a signal without the need for external biasing, thereby reducing system volume and complexity. The electret material used is a thin film of spin-on polytetrafluoroethylene (PTFE). An electron gun preferably is used for charge implantation. The electret has a saturated charged density in the range of about 2x10 C/m to about 8x10 C/m . Thermal annealing is used to stabilize the implanted charge. An open circuit sensitivity of about 0.5 mV/Pa has been achieved for a hybrid microphone package.

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