公开(公告)号：DE10027932A1

公开(公告)日：2001-12-13

申请号：DE10027932

申请日：2000-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGELHARDT MANFRED ,  WEINRICH VOLKER

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/283

Abstract: The method involves using a catalyst (5) before and/or during etching. A catalyst is applied to at least one inner surface of the structure to be etched. The catalyst can already form part of the insulating coating, can be inserted as a spacer (6) or can be introduced in the gaseous phase. The catalyst can form part of the etching chamber. Independent claims are also included for the following: an electronic or microelectronic component

公开(公告)号：DE10006964A1

公开(公告)日：2001-09-13

申请号：DE10006964

申请日：2000-02-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOENLEIN WOLFGANG ,  ENGELHARDT MANFRED ,  KREUPL FRANZ

IPC: H01J9/02 ,  H01J1/304 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H05K3/40 ,  B82B3/00 ,  B82B1/00

Abstract: The invention provides in a preferred embodiment an electronic component comprising a first conductive layer, a non-conductive layer and a second conductive layer. A hole is etched through the non-conductive layer. A nanotube, which is provided in said hole, links the first conductive layer to the second conductive layer in a conductive manner.

公开(公告)号：DE10004394A1

公开(公告)日：2001-08-16

申请号：DE10004394

申请日：2000-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGELHARDT MANFRED

IPC: H01L21/033 ,  H01L21/308