公开(公告)号：JP2002141412A

公开(公告)日：2002-05-17

申请号：JP2001255934

申请日：2001-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HASLER BARBARA ,  SCHNABEL RAINER FLORIAN ,  SCHINDLER GUENTHER DR ,  WEINRICH VOLKER

IPC: H01L23/522 ,  H01L21/02 ,  H01L21/28 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a conducting connection which permits the number of processes to be held as small as possible, or rather to be reduced, without such problems as overetching of trenches and dielectric close-off. SOLUTION: A semiconductor substrate having at least one insulation layer is prepared. A mask is formed on the upper face of the insulation layer, and then an isotropic etching process is mainly conducted, and then an anisotropic etching is mainly conducted until reaching the lower face of the insulation film and thereby forming a contact hole. Then, the mask is removed and the contact hole is filled with a first conductive material. The first conductive material is etched back to a specified depth, and then a free region of the contact hole is filled with at least one kind of second conductive material.

公开(公告)号：JP2003258127A

公开(公告)日：2003-09-12

申请号：JP2003040423

申请日：2003-02-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GABRIC ZVONIMIR ,  PAMLER WERNER ,  WEINRICH VOLKER

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115

Abstract: PROBLEM TO BE SOLVED: To provide the manufacturing method of constituents improved in the adhesion of a noble metal layer to an insulation layer. SOLUTION: The method for improving adhesion between the noble metal layer (28) and the insulation layer (34) is proposed. In this method, a silicon layer is provided between the noble metal layer (28) and the insulation layer (34). The silicon layer is salicided and oxidized by applying heat treatment in an atmosphere where oxygen is present. In this case, an oxidized silicon layer (30'), effecting strong mixture of the noble metal and the formed oxide, is produced. Adhesion of the noble metal layer (28) to the insulation layer (34) is improved, based on a comparatively large internal surface acquired by this method. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2001244425A

公开(公告)日：2001-09-07

申请号：JP2001051142

申请日：2001-02-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER DR ,  WEINRICH VOLKER ,  KASKO IGOR

IPC: H01L27/105 ,  H01L21/02 ,  H01L21/8246

Abstract: PROBLEM TO BE SOLVED: To provide an executable method of manufacturing, with only a little labor, a ferroelectric-material capacitor having two pieces or more of withstand voltage which are different from each other. SOLUTION: First, a first electrode structure 11 having the surface which forms at least two-height levels is formed on a substrate 1, a ferroelectric- material layer 13 having a variety of layer thickness is laminated on the first electrode structure 11 by spin coating, and in succession, a second electrode structure 12 is formed on the ferroelectric-material layer 13.

公开(公告)号：JP2001237402A

公开(公告)日：2001-08-31

申请号：JP2000393554

申请日：2000-12-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER DR ,  WEINRICH VOLKER ,  AHLSTEDT MATTIAS

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a structured metal oxide containing layer. SOLUTION: The method comprises the processing steps of preparing a substrate, covering a metal oxide containing layer on the substrate, structuring the metal oxide containing layer, and covering a repair layer covering at least edges of the metal oxide containing layer, and the repair layer contains at least one kind of element which is contained in the metal oxide containing layer but lacks in the stoichiometric composition at the edges due to structuring, and is heat-treated so as to diffuse the element from the repair layer at damaged regions of the edges of the metal oxide containing layer.

公开(公告)号：WO0065658A3

公开(公告)日：2001-03-29

申请号：PCT/DE0001303

申请日：2000-04-20

Applicant: INFINEON TECHNOLOGIES AG ,  WEINRICH VOLKER ,  SCHINDLER GUENTHER ,  MAZURE ESPEJO CARLOS

Inventor： WEINRICH VOLKER ,  SCHINDLER GUENTHER ,  MAZURE-ESPEJO CARLOS

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/06 ,  H01L27/105 ,  H01L21/8242

CPC classification number: H01L28/60 ,  H01L21/32136 ,  H01L27/0688

Abstract: The invention relates to a method of producing a high-epsilon dielectric/ferroelectric capacitor. According to the inventive method, a structural layer (10) with a central base-layer zone (11) and a trench (13) that is filled with Si and that laterally surrounds said layer is produced. A metal layer (14) is deposited on said layer and is siliconized above the Si-filled trench (13). When the siliconized metal layer section (18) is oxidized, it migrates into the trench (13), thereby forming a base electrode (19) above the base-layer zone (11).

Abstract translation: 在用于与中央基体层区（11）和有Si填充的沟槽围绕该横向制造高电介质基-ε-/铁电电容器结构化层（10）的方法（13）被产生。 此外，金属层（14）沉积和硅化在Si填充的沟槽（13）。 通过在沟槽（13），其特征在于，形成具有基极电极（19）的基本层区（11）氧化硅化金属层部分（18）迁移到这一点。

公开(公告)号：DE50014668D1

公开(公告)日：2007-10-31

申请号：DE50014668

申请日：2000-06-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGELHARDT MANFRED ,  WEINRICH VOLKER ,  KREUPL FRANZ ,  SCHIELE MANUELA

IPC: H01L21/3213 ,  H01L27/105 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108

Abstract: The invention relates to a method for fabricating a semiconductor memory component, in particular a DRAM or FeRAM having a silicon substrate. The lower electrode of a storage capacitor is insulated from the silicon substrate by a barrier layer. The barrier layer is patterned using a hard mask, in particular, made from SiO2, SiN, SiON, before the storage capacitor is applied, and the mask layer which remains after the patterning is removed so as to uncover the patterned barrier layer. The invention provides for the patterned barrier layer to be embedded in SiO2 by means of CVD (chemical vapor deposition) prior to the removal of the remaining mask layer, and for the remaining mask layer, together with the SiO2 embedding, to be removed from the surface of the barrier layer using an SiO2-CMP (chemical mechanical polishing) process.

公开(公告)号：DE10207130B4

公开(公告)日：2007-09-27

申请号：DE10207130

申请日：2002-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  PAMLER WERNER ,  GABRIC ZVONIMIR

IPC: H01L21/283 ,  H01L27/108 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115

Abstract: A method for improving the adhesion between a noble metal layer and an insulation layer includes configuring a silicon layer between the noble metal layer and the insulation layer. The silicon layer is siliconized and oxidized by a thermal treatment in an oxidative environment, resulting in an oxidized silicide layer with high intermixing of the noble metal and the formed oxide. The relatively large inner surface achieved as a result improves the adhesion between the noble metal layer and the insulation layer.

公开(公告)号：DE10118422B4

公开(公告)日：2007-07-12

申请号：DE10118422

申请日：2001-04-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  BEITEL GERHARD ,  HAUSER ANDREAS ,  BOSK PETER

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311 ,  H01L21/321 ,  H01L21/44 ,  H01L21/4763

公开(公告)号：DE10116875B4

公开(公告)日：2006-06-14

申请号：DE10116875

申请日：2001-04-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  KROENKE MATTHIAS ,  WEINRICH VOLKER

IPC: H01L21/8239 ,  H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/11507

公开(公告)号：DE19901002B4

公开(公告)日：2005-09-22

申请号：DE19901002

申请日：1999-01-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  ENGELHARDT MANFRED ,  DIENER WALTER

IPC: C23F1/02 ,  C23F4/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/304 ,  C23F1/00 ,  H01L21/3065