公开(公告)号：US20200091284A1

公开(公告)日：2020-03-19

申请号：US16568911

申请日：2019-09-12

Applicant: Infineon Technologies AG

Inventor： Markus Zundel

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/423

Abstract: A semiconductor device includes a semiconductor body having a first surface. A first trench extends in a vertical direction into the semiconductor body. The semiconductor device also includes a first interlayer in the first trench and a first dopant source in the first trench. The first interlayer is arranged between the first dopant source and the semiconductor body, and the first dopant source includes a first dopant species. The semiconductor device also includes a semiconductor area doped with the first dopant species and which completely surrounds the first trench at least at a depth in the semiconductor body and adjoins the first trench.

公开(公告)号：US10439030B2

公开(公告)日：2019-10-08

申请号：US15646152

申请日：2017-07-11

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Rolf Weis ,  Franz Hirler ,  Martin Vielemeyer ,  Markus Zundel ,  Peter Irsigler

IPC: H01L29/92 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/10 ,  H01L27/12 ,  H01L29/06

Abstract: A semiconductor device includes a transistor in a semiconductor body having a first main surface. The transistor includes: a source contact electrically connected to a source region; a drain contact electrically connected to a drain region; a gate electrode at the channel region, the channel region and a drift zone disposed along a first direction between the source and drain regions, the first direction being parallel to the first main surface, the channel region patterned into a ridge by adjacent gate trenches formed in the first main surface, the adjacent gate trenches spaced apart in a second direction perpendicular to the first direction, a longitudinal axis of the ridge extending in the first direction and a longitudinal axis of the gate trenches extending in the first direction; and at least one of the source and drain contacts being adjacent to a second main surface opposite the first main surface.

公开(公告)号：US20190157259A1

公开(公告)日：2019-05-23

申请号：US16236741

申请日：2018-12-31

Applicant: Infineon Technologies AG

Inventor： Dirk Ahlers ,  Markus Zundel ,  Peter Brandl ,  Kurt Matoy ,  Thomas Ostermann

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/78

Abstract: A semiconductor device of an embodiment includes a transistor device in a semiconductor die including a semiconductor body. The transistor device includes transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body. The semiconductor device further includes a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells. A first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells. The semiconductor device further includes a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area.

公开(公告)号：US20180286944A1

公开(公告)日：2018-10-04

申请号：US15941637

申请日：2018-03-30

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Karl-Heinz Bach ,  Christian Kampen ,  Dietmar Kotz ,  Andrew Christopher Graeme Wood ,  Markus Zundel

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/10 ,  H01L21/266 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0619 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813

Abstract: A semiconductor device includes a semiconductor body having a semiconductor substrate of a first conductivity type and a semiconductor layer of the first conductivity type on the substrate. A trench structure extends into the semiconductor body from a first surface and includes a gate electrode and at least one field electrode arranged between the gate electrode and a bottom side of the trench structure. A body region adjoins the trench structure and laterally extends from a transistor cell area into an edge termination area. A pn junction is between the body region and semiconductor layer. A doping concentration of at least one of the body region and semiconductor layer is lowered at a lateral end of the pn junction in the edge termination area compared to a doping concentration of the at least one of the body region and semiconductor layer at the pn junction in the transistor cell area.

公开(公告)号：US09899509B2

公开(公告)日：2018-02-20

申请号：US15082668

申请日：2016-03-28

Applicant: Infineon Technologies AG

Inventor： Markus Zundel

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/7811 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7813

Abstract: An embodiment of a semiconductor device comprises a trench transistor cell array in a semiconductor body. The semiconductor device further comprises an edge termination region of the trench transistor cell array. At least two first auxiliary trench structures extend into the semiconductor body from a first side and are consecutively arranged along a lateral direction. The edge termination region is arranged, along the lateral direction, between the trench transistor cell array and the at least two first auxiliary trench structures. First auxiliary electrodes in the at least two first auxiliary trench structures are electrically connected together and electrically decoupled from electrodes in trenches of the trench transistor cell array.

公开(公告)号：US09847387B2

公开(公告)日：2017-12-19

申请号：US15169290

申请日：2016-05-31

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Andrew Christopher Graeme Wood

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/739 ,  H01L29/10 ,  H01L21/265 ,  H01L21/324 ,  H01L29/423 ,  H01L29/08

CPC classification number: H01L29/0634 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42376 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815

Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.

公开(公告)号：US20170317176A1

公开(公告)日：2017-11-02

申请号：US15646152

申请日：2017-07-11

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Rolf Weis ,  Franz Hirler ,  Martin Vielemeyer ,  Markus Zundel ,  Peter Irsigler

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L27/12

CPC classification number: H01L29/4175 ,  H01L27/1203 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66696 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7826 ,  H01L29/7835

Abstract: A semiconductor device includes a transistor in a semiconductor body having a first main surface. The transistor includes: a source contact electrically connected to a source region; a drain contact electrically connected to a drain region; a gate electrode at the channel region, the channel region and a drift zone disposed along a first direction between the source and drain regions, the first direction being parallel to the first main surface, the channel region patterned into a ridge by adjacent gate trenches formed in the first main surface, the adjacent gate trenches spaced apart in a second direction perpendicular to the first direction, a longitudinal axis of the ridge extending in the first direction and a longitudinal axis of the gate trenches extending in the first direction; and at least one of the source and drain contacts being adjacent to a second main surface opposite the first main surface.

公开(公告)号：US09634081B2

公开(公告)日：2017-04-25

申请号：US14048173

申请日：2013-10-08

Applicant: Infineon Technologies AG

Inventor： Hermann Gruber ,  Thomas Gross ,  Werner Irlbacher ,  Markus Zundel ,  Mathias von Borcke ,  Hans Joachim Schulze

IPC: H01L49/02 ,  H01L27/08 ,  H01L21/266 ,  G01K7/18

CPC classification number: H01L28/20 ,  G01K7/186 ,  H01L21/266 ,  H01L27/0802

Abstract: A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.

公开(公告)号：US20170110572A1

公开(公告)日：2017-04-20

申请号：US15288243

申请日：2016-10-07

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Christian Kampen ,  Jacob Tillmann Ludwig

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10

CPC classification number: H01L29/7813 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

Abstract: A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift region portion and at least one second drift region portion. A majority of dopants within the first drift region portion are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer. Further, a majority of &pants within the second drift region portion are a second species of dopants. Additionally, the semiconductor device includes a trench extending from a surface of the semiconductor layer into the semiconductor layer. A vertical distance of a border between the first drift region portion and the second drift region portion to the surface of the semiconductor layer is larger than 0.5 times a maximal depth of the trench and less than 1.5 times the maximal depth of the trench.

公开(公告)号：US09570576B2

公开(公告)日：2017-02-14

申请号：US14102290

申请日：2013-12-10

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Anton Mauder ,  Markus Zundel ,  Hans-Joachim Schulze ,  Franz Hirler ,  Hans Weber

IPC: H01L21/332 ,  H01L29/66 ,  H01L21/02 ,  H01L21/306 ,  H01L29/06 ,  H01L21/768 ,  H01L29/739 ,  H01L29/78 ,  H01L29/40 ,  H01L29/861

CPC classification number: H01L29/66333 ,  H01L21/02118 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02258 ,  H01L21/30604 ,  H01L21/76831 ,  H01L21/76898 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/402 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/861

Abstract: A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic oxidation of a back side surface region of a back side surface of the semiconductor substrate to form an oxide layer at the back side surface of the semiconductor substrate.

Abstract translation: 一种形成半导体器件的方法包括在半导体衬底的主表面上形成电结构，并对半导体衬底的背面表面的背面表面区进行阳极氧化，以在后侧形成氧化物层 半导体衬底的表面。