公开(公告)号：US11754640B2

公开(公告)日：2023-09-12

申请号：US17219059

申请日：2021-03-31

Applicant: Infineon Technologies AG

Inventor： Matthias Stecher ,  Hermann Gruber ,  Thorsten Hinderer

IPC: G01R31/62 ,  H01F27/40 ,  H01F27/29

CPC classification number: G01R31/62 ,  H01F27/29 ,  H01F27/40

Abstract: A device including a first voltage domain and a second voltage domain is provided, the voltage domains being separated by an isolation barrier. In addition, the device includes a scratch detection circuit including a first and a second electrode at a distance of less than 2 μm.

公开(公告)号：US20210318392A1

公开(公告)日：2021-10-14

申请号：US17219059

申请日：2021-03-31

Applicant: Infineon Technologies AG

Inventor： Matthias Stecher ,  Hermann Gruber ,  Thorsten Hinderer

IPC: G01R31/62 ,  H01F27/29 ,  H01F27/40

Abstract: A device including a first voltage domain and a second voltage domain is provided, the voltage domains being separated by an isolation barrier. In addition, the device includes a scratch detection circuit including a first and a second electrode at a distance of less than 2 μm.

公开(公告)号：US11081384B2

公开(公告)日：2021-08-03

申请号：US16388632

申请日：2019-04-18

Applicant: Infineon Technologies AG

Inventor： Hermann Gruber ,  Joerg Busch

IPC: H01L21/762 ,  H01L23/00 ,  H01L23/532 ,  H01L23/495

Abstract: A method includes producing a semiconductor arrangement having a semiconductor layer, a first insulation layer arranged on the semiconductor layer and facing a first surface of the semiconductor arrangement, and an insulating via extending in a vertical direction through the semiconductor layer as far as the first insulation layer, the insulating via surrounding a region of the semiconductor layer in a ring-shaped fashion. The method further includes permanently securing a first carrier to the first surface of the semiconductor arrangement.

公开(公告)号：US20200321388A1

公开(公告)日：2020-10-08

申请号：US16909745

申请日：2020-06-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US20190326155A1

公开(公告)日：2019-10-24

申请号：US16388632

申请日：2019-04-18

Applicant: Infineon Technologies AG

Inventor： Hermann Gruber ,  Joerg Busch

IPC: H01L21/762 ,  H01L23/00 ,  H01L23/532 ,  H01L23/495

Abstract: A method includes producing a semiconductor arrangement having a semiconductor layer, a first insulation layer arranged on the semiconductor layer and facing a first surface of the semiconductor arrangement, and an insulating via extending in a vertical direction through the semiconductor layer as far as the first insulation layer, the insulating via surrounding a region of the semiconductor layer in a ring-shaped fashion. The method further includes permanently securing a first carrier to the first surface of the semiconductor arrangement.

公开(公告)号：US09576844B2

公开(公告)日：2017-02-21

申请号：US14962393

申请日：2015-12-08

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze ,  Karsten Kellermann ,  Michael Sommer ,  Christian Rottmair ,  Roland Rupp

IPC: H01L21/30 ,  H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  C30B25/18 ,  H01L21/324 ,  H01L21/265 ,  H01L21/321 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L21/76254 ,  C30B25/186 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02598 ,  H01L21/2007 ,  H01L21/265 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76251 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

Abstract: A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.

Abstract translation: 通过提供包括石墨和保护层的载体晶片来形成复合晶片，形成结合层，并通过粘合层将载体晶片接合到半导体晶片。

公开(公告)号：US09252045B2

公开(公告)日：2016-02-02

申请号：US13776796

申请日：2013-02-26

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/31 ,  H01L21/469 ,  H01L21/762 ,  H01L29/02 ,  H01L29/16 ,  H01L21/02

CPC classification number: H01L21/76251 ,  H01L21/02002 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/7624 ,  H01L29/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161

Abstract: A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

Abstract translation: 提供了一种复合晶片，其包括具有石墨芯和附着于载体基板的单晶半导体衬底或层的载体衬底和用于制造这种复合晶片的相应方法。

公开(公告)号：US10854669B2

公开(公告)日：2020-12-01

申请号：US16909745

申请日：2020-06-23

Applicant: Infineon Technologies AG

Inventor： Dirk Meinhold ,  Emanuele Bruno Bodini ,  Felix Braun ,  Hermann Gruber ,  Uwe Hoeckele ,  Dirk Offenberg ,  Klemens Pruegl ,  Ines Uhlig

IPC: H01L27/146 ,  H01L27/148

Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

公开(公告)号：US20160086844A1

公开(公告)日：2016-03-24

申请号：US14962393

申请日：2015-12-08

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze ,  Karsten Kellermann ,  Michael Sommer ,  Christian Rottmair ,  Roland Rupp

IPC: H01L21/762 ,  H01L21/321 ,  H01L21/265 ,  H01L29/20 ,  H01L21/324 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/76254 ,  C30B25/186 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02598 ,  H01L21/2007 ,  H01L21/265 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76251 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

Abstract: A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.

Abstract translation: 通过提供包括石墨和保护层的载体晶片来形成复合晶片，形成结合层，并通过粘合层将载体晶片接合到半导体晶片。

公开(公告)号：US20150279941A1

公开(公告)日：2015-10-01

申请号：US14719974

申请日：2015-05-22

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze

IPC: H01L29/161 ,  H01L29/04

CPC classification number: H01L21/76251 ,  H01L21/02002 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/7624 ,  H01L29/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161

Abstract: A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.

Abstract translation: 提供了一种复合晶片，其包括具有石墨芯和附着于载体基板的单晶半导体衬底或层的载体衬底和用于制造这种复合晶片的相应方法。