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    PHOTOMASK
    91.
    发明专利
    PHOTOMASK 失效

    公开(公告)号：JPS5984244A

    公开(公告)日：1984-05-15

    申请号：JP19507282

    申请日：1982-11-05

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TODOKORO YOSHIHIRO ,  YAMAO TATSUHIKO

    IPC: G03F1/00 ,  G03F1/40 ,  H01L21/027

    Abstract: PURPOSE:To obtain a photomask preventing dust from sticking to the mask, transferring to a wafer and causing defects in an integrated element by forming an antistatic thin film on the substrate of a mask and on a light shielding pattern on the surface of the substrate. CONSTITUTION:An electrically conductive transparent thin film 4 of electrically conductive SnO2 or the like is formed on the surface of the substrate 1 of a photomask for manufacturing an integrated semiconductor element, etc. and on a light shielding pattern of a Cr film 3 or the like formed on the substrate 1. A nonchargeable thin silicon oxide film may be formed by coating an org. solvent contg. a partial hydrolyzate of SiCl4. The thickness of the antistatic thin film 4 is adjusted so as to make the transmittance >=75% at the wavelengths of a light source for transfer. Patterning can be carried out without hindering exposure. The film 4 is hardly scratched, has a flat surface, and prevents dust from sticking to the surface of the mask and transferring to a wafer.

    Developing device
    92.
    发明专利
    Developing device 失效
    开发设备

    公开(公告)号：JPS5962852A

    公开(公告)日：1984-04-10

    申请号：JP17503582

    申请日：1982-10-04

    Applicant: Matsushita Electronics Corp

    Inventor： OOHASHI NORIKO ,  SEZE SHINICHI ,  TODOKORO YOSHIHIRO

    IPC: G03D5/04

    CPC classification number: G03D5/04

    Abstract: PURPOSE:To eliminate the decrease in the temp. on a substrate surface and the uneven temp. thereon by heating the photosensitive material layer after exposure and supplying a developer to the photosensitive material layer part. CONSTITUTION:The rate of a decrease in the temp. of a substrate 1 to be resulted from the supply of a developing soln. consisting of an org. solvent to an electron beam resist by the injection from a nozzle is 0.1 deg.C/S in the case of methyl isobutyl ketone. Therefore, if the distance between the substrate 1 provided with a photosensitive material layer and an IR lamp 7 of a heat ray source is determined at 30cm, the decrease in the temp. of the substrate 1 is compensated and the temp. of the substrate is maintained at a room temp. by using the IR lamp having 600W capacity in the case of using methyl isobutyl ketone for the developing soln. The temp. distribution can be compensated if the quantity of the heat ray absorption thereof is distributed adequately by using a filter 8. More specifically, the temp. distribution of the substrate 1 is made uniform by using such filter 8 with which the heat ray transmiting the filter 8 is strong in the central part and is weak in the peripheral part.

    Abstract translation: 目的：消除温度的下降。 在基板表面和不均匀的温度。 在曝光之后加热感光材料层并将显影剂供应到感光材料层部分。 构成：温度下降的速度 由提供显影溶胶而产生的基底1。 由组织组成 在甲基异丁基酮的情况下，通过从喷嘴注入的电子束抗蚀剂的溶剂为0.1℃/ S。 因此，如果设置有感光材料层的基板1和热射线源的IR灯7之间的距离为30cm，则温度的降低。 补偿基板1的温度。 的基板保持在室温。 在使用甲基异丁基酮作为显影溶液的情况下，使用具有600W容量的IR灯。 温度 如果通过使用过滤器8适当地分配其热射线吸收量，则可以补偿分布。 通过使用这样的过滤器8使基板1的分布均匀，过滤器8的透射过滤器8的热射线在中心部分较强，在周边部分较弱。

    Mask formation and electron beam exposure apparatus employed therefor
    93.
    发明专利
    Mask formation and electron beam exposure apparatus employed therefor 失效
    掩蔽形成和电子束曝光装置

    公开(公告)号：JPS5933826A

    公开(公告)日：1984-02-23

    申请号：JP14444382

    申请日：1982-08-19

    Applicant: Matsushita Electronics Corp

    Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO ,  YAEGASHI YUUKI

    IPC: G03F1/00 ,  G03F1/54 ,  H01J37/18 ,  H01J37/317 ,  H01L21/027

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/18 ,  H01J37/3174

    Abstract: PURPOSE:To permit the post-polymerization of a negative-type resist to be suspended without any need for bringing a pre-evacuation chamber to the atmospheric pressure, thereby to make it possible to reduce the number of times of required evacuating operations and the time required for evacuation and stabilize the titled apparatus correspondingly, by a method wherein when a predetermined period of time has passed after a sample is fed into a pre-evacuation chamber kept under a high vacuum, the degree of vacuum is lowered and a relatively high vaccum degree is maintained, and then the vacuum state is raised again to a high vacuum degree not lower than 10 Torr. CONSTITUTION:After a mask substrate is exposed by electron beams in a high vaccum with a vacuum degree not lower than 10 Torr, a variable leak valve 11 is attached through an electromagnetic valve 10 to a pre-evacuation chamber 2 with an autoloader. As a negative-type resist, polyglycidyl methacrylate is employed. When 30min has passed after the replacement of samples, the electromagnetic valve 10 is opened, and the variable leak valve 11 is adjusted to lower the degree of vacuum in the pre-evacuation chamber 2 to 0.01-5Torr, e.g., 0.1Torr by supplying the chamber 2 with O2 gas or a gas from an air container 12. When a predetermined period of time, e.g., one minute has passed thereafter, the electromagnetic valve 10 is closed again to place the pre-evacuation chamber 2 under a high vaccum not lower than 10 Torr. By this operation, the progress of the post-polymerization in the PGMA resist is suspended at a point of time when the vacuum degree reaches 0.1Torr when 30min has passed after the exposure. It takes only several to several tens of seconds to reproduce a high vacuum not lower than 10 Torr from this vacuum state.

    Abstract translation: 目的：允许负型抗蚀剂的后聚合悬浮，而不需要使预抽气室达到大气压力，从而可以减少所需的排气操作次数和时间 通过一种方法，其中当在将样品送入保持在高真空度的预抽真空室中经过预定时间段时，真空度降低并且相对较高的真空度 然后将真空状态再次升高到不低于10 -3 Torr的高真空度。 构成：在真空度不低于10 -3乇的高真空中的电子束暴露掩模基板之后，可变泄漏阀11通过电磁阀10附接到预抽真空室2，具有 自动加载磁带机。 作为负型抗蚀剂，使用聚甲基丙烯酸缩水甘油酯。 在更换样品30分钟后，打开电磁阀10，调整可变泄漏阀11，将预抽真空室2内的真空度降至0.01-5Torr，例如0.1Torr 具有O 2气体的腔室2或来自空气容器12的气体。当此后经过预定时间段（例如1分钟）时，电磁阀10再次关闭，以将预抽真空室2放置在不低于 超过10 -3托。 通过该操作，在曝光后30分钟时，在真空度达到0.1Torr的时刻，将PGMA抗蚀剂中的后聚合的进行中止。 从该真空状态再生不低于10 -3乇的高真空度需要几到几十秒。

    FORMATION OF THIN FILM
    94.
    发明专利
    FORMATION OF THIN FILM 失效

    公开(公告)号：JPS58162041A

    公开(公告)日：1983-09-26

    申请号：JP4501982

    申请日：1982-03-19

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TODOKORO YOSHIHIRO

    IPC: H01L21/302 ,  H01L21/306 ,  H01L21/3065

    Abstract: PURPOSE:To obtain smooth surface of semiconductor substrate without a high temperature heat processing by coating in the predetermined thcikness or more silicon oxide to the entire part of semiconductor substrate surface obtained by forming a thin film into the specified shape and then dry-etching such silicon oxide. CONSTITUTION:After forming the predetermined shape of polycrystalline Si on an Si substrate 1, a silicon compound film 4 is formed in the thickness of about 0.5-1.0mum on the semiconductor substrate forming the phosphorus (P) glass 3 by spin-coating the liquid obtained, for example, by dissolving the silicon compound RnSi(OH)4-n into an organic solvent together with the additive such as phosphorus. This silicon compound film 4 is converted into a smooth film 40 mainly consisting of the silicon oxide through heat processing at a temperature of 250 deg.C. Then, this film 40 is etched in the entire part using the C3F3 gas in the parallel flat type dry etching apparatus. The etching amount is set to a value by which at least the maximum level surface of the phosphorus glass 3 is exposed. The smooth surface can be obtained through such a processing.

    RESIST PATTERN FORMATION
    95.
    发明专利
    RESIST PATTERN FORMATION 失效

    公开(公告)号：JPS5892223A

    公开(公告)日：1983-06-01

    申请号：JP19146581

    申请日：1981-11-27

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TODOKORO YOSHIHIRO

    IPC: H01L21/027 ,  G03F7/095 ,  G03F7/20 ,  H01L21/30

    Abstract: PURPOSE:To eliminate the need for a mask having difficult manufacture under ion beam exposure by a method wherein the second resist is applied after the first resist is applied on a predetermined substrate and ion beam exposure is performed after forming a predetermined figure on the second resist by exposure and development processes and then the first resist is developed. CONSTITUTION:AZ2400 resist 7 is applied as the first resist on an Si substrate 1 and after prebaking, PBS resist 8 is applied at the second resist for prebaking. A predetermined figure is exposed with the aid of an electron beam exposure device. Development is done by special developer for PBS. The AZ2400 resist has low sensitivity to electron beams, thus the AZ2400 resist is not exposed to open a window 9 in the PBS resist 8. Next, ion beam exposure is done with the aid of proton ion 6. At that time, the PBS resist 8 acts as a mask for ion beams and only the AZ2400 resist 7 is exposed. Finally, development for AZ2401 is done to form a resist pattern.

    Manufacture of mask
    96.
    发明专利
    Manufacture of mask 失效
    面膜制造

    公开(公告)号：JPS5748731A

    公开(公告)日：1982-03-20

    申请号：JP12507280

    申请日：1980-09-08

    Applicant: Matsushita Electronics Corp

    Inventor： TODOKORO YOSHIHIRO

    IPC: G03F1/00 ,  G03F1/76 ,  G03F1/78 ,  H01L21/027

    CPC classification number: G03F1/78

    Abstract: PURPOSE:To shorten a required time for drawing and to obtain a high-precision mask by applying resist after forming a large-area light-shielding film in a prescribed pattern by selectively removing the thin light-shielding film formed on a substrate, and by forming the fine pattern with an electron beam. CONSTITUTION:After a thin light-shielding film 7 formed on a Cr film, etc., on a glass substrate 1 is coated with resist, a pattern generator or elctron-beam exposure device having a high drawing speed is used to draw a large pattern 3 and an L- shaped pattern 4 for positioning, and development, etching and resist removal are performed to form the 1st mask pattern 3. Further, the substrate 1 is coated with new resist and an electron beam exposure device having high resolution is used to scan the L-shaped pattern 4 with an electron beam; while positoning 5 is performed, a fine pattern is drawn. Then, etching and resist removal are carried out to form a fine pattern part 6. Thus, the total drawing time is shortened and the submicron pattern 6 is formed with high precision.

    Abstract translation: 目的：通过选择性地去除在基板上形成的薄的遮光膜，缩短在规定图案中形成大面积遮光膜之后通过涂布抗蚀剂来获得高精度掩模所需的时间，并且通过 用电子束形成精细图案。 结构：在玻璃基板1上形成的Cr膜等上的薄的遮光膜7涂覆有抗蚀剂后，使用具有高拉拔速度的图案发生器或电子束曝光装置来绘制大图案 3和用于定位和显影，蚀刻和抗蚀剂去除的L形图案4进行以形成第一掩模图案3.此外，基板1涂覆有新的抗蚀剂，并且使用具有高分辨率的电子束曝光装置 用电子束扫描L形图案4; 当进行定位5时，绘制精细图案。 然后，进行蚀刻和抗蚀剂去除以形成精细图案部分6.因此，缩短总绘制时间并且以高精度形成亚微米图案6。

    MANUFACTURE OF SEMICONDUCTOR DEVICE
    97.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS5623746A

    公开(公告)日：1981-03-06

    申请号：JP9894779

    申请日：1979-08-01

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TODOKORO YOSHIHIRO

    IPC: H01L21/306

    Abstract: PURPOSE:To obtain the highly accurate electrode wiring in the semiconductor device by superimposing a resist mask of small pore on a resist mask of large pore, evaporating metallic film thereon, and then removing the masks therefrom. CONSTITUTION:The first positive resist 2 is formed on a semiconductor substrate 1 to form an exposure portion 5. A positive resist 2' is further superimposed to form a smaller exposure portion 5'. When it is developed, an electrode opening 3 having an overhang is formed. When a metallic film 4 is formed and the resist is removed, a miniature electrode pattern 6 is obtained thereon. This configuration can easily form an overhanglike resist pattern and can easily lift off it. Accordingly, it can obtain highly accurate electrode pattern in one development with preferable reproducibility.

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