公开(公告)号：JP2010123872A

公开(公告)日：2010-06-03

申请号：JP2008298292

申请日：2008-11-21

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YAMAGUCHI NORIHIKO ,  TANIGUCHI OSAMU ,  IKEDA MASAO

IPC: H01L21/66 ,  G01N21/64 ,  H01L21/20 ,  H01L21/324 ,  H01L21/336 ,  H01L29/786

CPC classification number: H01L22/12 ,  G01N21/6489

Abstract: PROBLEM TO BE SOLVED: To provide a nondestructive inspection method in which the film quality of an amorphous or polycrystalline oxide semiconductor layer useful as an active layer of a thin-film transistor etc., can be nondestructively and speedily checked, and to provide a method of manufacturing the amorphous or polycrystalline oxide semiconductor layer using the inspection method. SOLUTION: The amorphous or polycrystalline oxide semiconductor layer to be inspected is irradiated with pumping light 2, and the intensity of photoluminescence light 4, in a wavelength range longer than a wavelength corresponding to band-gap energy, of light emitted from the oxide semiconductor layer to be inspected is measured. Then photoluminescence light intensity and film quality are similarly measured with respect to an amorphous or polycrystalline reference oxide semiconductor formed in the same processes with the oxide semiconductor layer to be inspected and having the same element composition and film thickness with the oxide semiconductor layer to be inspected to obtain a relationship between the photoluminescence light intensity and film quality, and the film quality of the oxide semiconductor layer is estimated based upon the relationship. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种非破坏性检查方法，其中可以非破坏性和快速地检查用作薄膜晶体管等的有源层的非晶或多晶氧化物半导体层的膜质量，以及 提供使用检查方法制造非晶或多晶氧化物半导体层的方法。 解决方案：用泵浦光2照射要检查的非晶或多晶氧化物半导体层，并且在从...的光发射的光的波长范围比对应于带隙能量的波长的光致发光4的强度 测量待检查的氧化物半导体层。 然后，相似于与要检查的氧化物半导体层相同的工艺中形成的非晶或多晶参考氧化物半导体，并且与要检查的氧化物半导体层具有相同的元素组成和膜厚度，类似地测量光致发光光强度和膜质量 以获得光致发光光强度和膜质量之间的关系，并且基于该关系估计氧化物半导体层的膜质量。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009206533A

公开(公告)日：2009-09-10

申请号：JP2009146321

申请日：2009-06-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  NAKAJIMA HIROSHI

IPC: H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element using a nitride-based Group III-V compound semiconductor, which reduces the threshold current density without increasing the operation voltage practically.
SOLUTION: A p-type clad layer of a GaN-based semiconductor laser is configured by two or more semiconductor layers having different band gaps from one another, and a part of an active layer side of the p-type clad layer is configured by a semiconductor layer having a band gap greater than that of the other parts. Specifically, in the GaN-based semiconductor laser with an AlGaN/GaN/GaInN SCH structure, a p-type AlGaN clad layer 10 is configured of: a p-type Al
x1 Ga
1-x1 N layer 10a in contact with a p-type GaN optical waveguide layer 9; and a p-type Al
x2 Ga
1-x2 N layer 10b on the p-type Al
x1 Ga
1-x1 N layer 10a (here, 0≤x2

Abstract translation: 要解决的问题：提供一种使用氮化物基III-V族化合物半导体的半导体发光元件，其在实际上不增加操作电压的情况下降低阈值电流密度。 解决方案：GaN基半导体激光器的p型覆盖层由具有彼此不同带隙的两个或更多个半导体层构成，并且p型覆层的有源层侧的一部分为 由具有比其它部分的带隙大的带隙的半导体层构成。 具体地，在具有AlGaN / GaN / GaInN SCH结构的GaN基半导体激光器中，p型AlGaN覆盖层10由p型AlGaN / 与p型GaN光波导层9接触的x1 / N层10a; 和p型Al x1 1-x1 上的p型Al x2 Ga 1-x2 < / SB> N层10a（这里，0≤x2

公开(公告)号：JP2007081197A

公开(公告)日：2007-03-29

申请号：JP2005268011

申请日：2005-09-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TANIGUCHI MANABU ,  KURAMOTO MASARU ,  IKEDA MASAO ,  MIZUNO TAKASHI ,  TOMITANI SHIGETAKA

IPC: H01S5/10

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor laser which can be improved in COD level without altering a laser structure even when driven with high power to have a higher kink level of L-I characteristics and further can reduce an operating current during power supply so that the reliability and life can be improved.
SOLUTION: The semiconductor laser has a laser structure made of a nitride-based group III-V compound semiconductor, a pair of cleavage planes 37 and 38 formed in a resonator direction of the laser structure, a coating 39 formed on a laser light projection side between the pair of cleavage planes 37 and 38, and a p-side electrode 35 and an n-side electrode 36 for injecting a current into the laser structure. A current of level larger than a threshold is supplied to the p-side electrode 35 and n-side electrode 36 for a specified time to irradiate the coating 39 with laser light, and then an area including an are of the coating 39 where the laser light is projected is modified.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种可以在不改变激光结构的情况下提高COD水平的半导体激光器的制造方法，即使以高功率驱动以具有较高的L1特性的扭结水平，并且还可以减少操作 供电时的电流，从而提高可靠性和寿命。 解决方案：半导体激光器具有由氮化物基III-V族化合物半导体制成的激光结构，在激光结构的谐振器方向上形成的一对解理面37和38，形成在激光器上的涂层39 一对解理面37,38之间的光投射侧，以及用于将电流注入激光结构的p侧电极35和n侧电极36。 在p侧电极35和n侧电极36上提供大于阈值的电流达规定时间以用激光照射涂层39，然后包括的区域是涂层39，其中激光 投影光被修改。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007059941A

公开(公告)日：2007-03-08

申请号：JP2006303673

申请日：2006-11-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/323 ,  H01L21/205 ,  H01L33/06 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device using nitride based III-V compound semiconductors, which has longer operating life by making the crystallinity of a optical wave guide to be good, and particularly, in a semiconductor laser, has a high symmetry of light intensity distribution in a far field pattern and a reduced aspect ratio of a radiation angle, and to provide its manufacturing method. SOLUTION: The semiconductor light emitting device is composed by sequentially laminating an n-type AlGaN cladding layer 5, an n-type GaN light wave guide layer 6, an active layer 7 made of InGaN, an undoped GaN light wave guide layer 17, a p-type AlGaN cap layer 9, a p-type AlGaN/GaN superlattice cladding layer 18, and a p-type GaN contact layer 12. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种通过使光波导的结晶性良好而具有更长使用寿命的氮化物III-V族化合物半导体的半导体发光元件，特别是在半导体激光器中， 具有远场图案中的光强度分布的高对称性和减小的辐射角的纵横比，并提供其制造方法。 解决方案：半导体发光器件通过依次层叠n型AlGaN包层5，n型GaN光波导层6，由InGaN制成的有源层7，未掺杂的GaN光波导层 17，p型AlGaN帽层9，p型AlGaN / GaN超晶格包覆层18和p型GaN接触层12.版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005327905A

公开(公告)日：2005-11-24

申请号：JP2004144700

申请日：2004-05-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAKEYA MOTONOBU ,  FUJIMAKI YOSHITSUGU ,  HASHITSU TOSHIHIRO ,  IKEDA MASAO ,  SATO KEIJI

IPC: G11B7/125 ,  H01S5/40

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which can prevent generation of reflection of a beam and may be mounted under the condition that positional interval of the light emitting points of a plurality of light emitting elements is narrowed, and also to provide an optical appartus using the same device. SOLUTION: The laminated structure of a first light emitting element 20 and a second light emitting element 30 is mounted over a supporting base material 11. Cutout grooves 26A, 26B are provided at the first light emitting element 20 toward the end surface 20A of substrate from the front side of the position opposing to the second light emitting points (light emitting points 33a, 33b) of the second light emitting element 30. Even in the case where the light emitting points 33a, 33b of the second light emitting element 30 are allocated, when viewing from the main light emitting side, after the light emitting point 23a of the first light emitting element 20, the beam B emitted from the light emitting points 33a, 33b passes the cutout grooves 26A, 26B in the side of the first light emitting element 20 and is never reflected in the side of the first light emitting element 20. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供一种半导体发光装置，其可以防止光束的反射的产生，并且可以在多个发光元件的发光点的位置间隔变窄的条件下安装，以及 还提供使用相同设备的光学配件。 解决方案：将第一发光元件20和第二发光元件30的层叠结构安装在支撑基材11上。在第一发光元件20处朝向端面20A设置开口槽26A，26B 从第二发光元件30的与第二发光点（发光点33a，33b）相对的位置的前侧的基板。即使在第二发光元件的发光点33a，33b 30在从主发光侧观察时，在第一发光元件20的发光点23a之后，从发光点33a，33b发射的光束B通过切割槽26A，26B的侧面 第一发光元件20并且不会在第一发光元件20的一侧反射。版权所有：（C）2006，JPO＆NCIPI

公开(公告)号：JP2004335645A

公开(公告)日：2004-11-25

申请号：JP2003128059

申请日：2003-05-06

Applicant: Sony Corp ,  Sumitomo Electric Ind Ltd ,  ソニー株式会社 ,  住友電気工業株式会社

Inventor： NAKAYAMA MASAHIRO ,  NAKAHATA SEIJI ,  UEMATSU KOJI ,  TAMAMURA KOJI ,  IKEDA MASAO

IPC: C30B25/04 ,  C30B29/38 ,  H01L21/02

Abstract: PROBLEM TO BE SOLVED: To provide a GaN wafer capable of indicating the (11-20) orientation with high accuracy by solving the problem that an orientation indicating means relying upon the orientation flat (OF) has an error as high as 0.5-1° although a circular independent GaN can be produced.
SOLUTION: When a linear mask is provided in the (-110) direction on a GaAs substrate and GaN is facet grown thereon, a dislocation is drawn onto the linear mask to produce a defect collective region H. Other part becomes a single crystal region of good quality where dislocation is suppressed. The defect collective region H has a crystal structure different from that of an adjacent single crystal part and also has an optical difference. The GaAs substrate is removed and the mask is also removed, and a parallel defect collective region H grown thereon can be seen with the naked eye. The H is formed in parallel with the cleavage plane which is indicated with high precision by a stripe (defect collective region H). Crystal orientation can thereby be indicated with an error of 0.5° or less or 0.03° or less.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供能够高精度地指示（11-20）取向的GaN晶片，通过解决依赖于取向平面（OF）的取向指示装置具有高达0.5的误差的问题 -1°，尽管可以生产圆形独立的GaN。 解决方案：当在GaAs衬底上沿（-110）方向设置线性掩模并且在其上生长GaN时，在线性掩模上引入位错以产生缺陷集合区H.另一部分成为单 晶体区域质量好，位错被抑制。 缺陷集合区域H具有与相邻单晶部分不同的晶体结构，并且还具有光学差异。 去除GaAs衬底并且还去除掩模，并且可以用肉眼看到其上生长的平行缺陷集合区域H. H与通过条纹（缺陷集合区域H）以高精度指示的解理面平行地形成。 因此可以以0.5°以下或0.03°以下的误差来表示晶体取向。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004040051A

公开(公告)日：2004-02-05

申请号：JP2002198783

申请日：2002-07-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MIZUNO TAKASHI ,  TAKEYA MOTONOBU ,  ASANO TAKEHARU ,  IKEDA MASAO

IPC: H01S5/02 ,  H01S5/022 ,  H01S5/323

CPC classification number: H01S5/0224 ,  H01S5/0021 ,  H01S5/02212 ,  H01S5/02224 ,  H01S5/02272 ,  H01S5/32341

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor-device manufacturing method that suppresses substances film formation on the laser beam emitting end surface of a laser to improve the life time characteristic of the laser.
SOLUTION: In the semiconductor-device manufacturing method, an energy beam EB of a shorter wavelength than the oscillating wavelength of a laser chip 20 is projected on a supporter 31 mounting the laser chip 20. By the photodecomposition and the oxidation performed by the energy beam EB, adhesive substances 83 originated from an adhesive sheet, etc. used when mounting the laser chip 20 on the supporter 31 are removed from the whole of the supporter 31 or altered. As the energy beam EB, for example, a laser beam or an ultraviolet ray is used preferably. Also, a plasma can be projected on the supporter 31 mounting the laser chip 20 to remove the adhesive substances 83 by the ion-cleaning effect caused by the plasma. After the projection of the energy beam EB, a cover is so provided on the supporter 31 as to seal the supporter 31 from the external.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004023050A

公开(公告)日：2004-01-22

申请号：JP2002179875

申请日：2002-06-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  MATSUMOTO OSAMU ,  SASAKI TOMOMI ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01L33/44 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC classification number: H01S5/0207 ,  H01S5/0014 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/32341

Abstract: PROBLEM TO BE SOLVED: To provide a GaN semiconductor light-emitting device which is formed on a GaN single-crystal substrate and has a structure the current leakage is reduced. SOLUTION: In the GaN semiconductor laser device 50, a p-side electrode and an n-side electrode are disposed on a laminated structure-side. The device has the same structure as that of a conventional GaN semiconductor layer device formed on a sapphire substrate, except that the laminated structure of a GaN compound semiconductor layer is formed directly on the GaN single-crystal substrate 52, without installing a GaN-ELO structure layer by using the GaN single crystal substrate 52, instead of the sapphire substrate. The GaN single-crystal substrate 50 has core parts 52a in continuous band shapes of 10μm width, and the interval between the core part 52a and the core part 52a is about 400μm. A laser stripe 30, a pad metal 37 of the p-side electrode 36 and the n-side electrode 38 are disposed in the laminated structure on a region, except the core part 52a of the GaN single crystal substrate 50. A horizontal distance S p between the pad metal 37 and an outer peripheral edge of the core part 52a and a horizontal distance S n between the n-side electrode 38 and the outer peripheral edge of the core part 52a are 95μm. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003298110A

公开(公告)日：2003-10-17

申请号：JP2003119604

申请日：2003-04-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To enable an n-type AlGaN clad layer and a p-type AlGaN clad layer, which are both superior in quality, to grow so as to manufacture a high- performance semiconductor laser. SOLUTION: In a method of manufacturing a GaN semiconductor laser, the growth temperature of the p-type AlGaN clad layer is set lower than that of the n-type AlGaN clad layer, and the growth temperatures of the p-type AlGaN clad layer and the n-type AlGaN clad layer are set equal to that of a GaInN active layer or above and set at 980°C or below, e.g. 930 to 960°C. It is preferable that the surface of a base is covered with a p-type AlGaN cap layer which has been grown at the growth temperature nearly equal to that of the GaInN active layer or below before the p-type AlGaN clad layer is grown. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了使得质量优异的n型AlGaN包层和p型AlGaN包层生长以制造高性能半导体激光器。 解决方案：在制造GaN半导体激光器的方法中，将p型AlGaN包覆层的生长温度设定为低于n型AlGaN包覆层的生长温度，并且p型AlGaN的生长温度 将n型AlGaN覆盖层设定为等于GaInN有源层以上且设定在980℃以下，例如 930至960℃。 优选的是，在p型AlGaN覆盖层生长之前，在与GaInN有源层的生长温度几乎相同的生长温度下生长的p型AlGaN覆盖层覆盖基底的表面。 版权所有（C）2004，JPO

公开(公告)号：JP2003086903A

公开(公告)日：2003-03-20

申请号：JP2001271948

申请日：2001-09-07

Applicant: SONY CORP

Inventor： ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  GOTO OSAMU ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To realize a semiconductor light emitting device which restrains electrons from overflowing without impeding an injection of holes into an active layer, is markedly reduced in a drive current and a voltage, and formed of nitride III-V compound semiconductor. SOLUTION: A semiconductor light emitting device is formed of nitride III-V compound semiconductor and has a structure in which an active layer is interposed between an N-type clad layer 5 and a P-type clad layer 10. At least, a cap layer 8 which is of super lattice and composed of barrier layers formed of first nitride III-V compound semiconductor containing Al and Ga and each having a first thickness and well layers formed of second nitride III-V compound semiconductor containing Ga and each having a second thickness that are alternately laminated is provided between the active layer 7 and the P-type clad layer 10.