公开(公告)号：JPH0917031A

公开(公告)日：1997-01-17

申请号：JP16414095

申请日：1995-06-29

Applicant: SONY CORP

Inventor： TOMITA TAKASHI ,  KIKUCHI NORIKO

IPC: G11B7/24 ,  G11B11/10 ,  G11B11/105

Abstract: PURPOSE: To make high recording density possible as the occurrence of crosstalks is suppressed even if a track pitch is made smaller than the spot diameter of a beam spot. CONSTITUTION: Groove parts 2, 3, 4 having an arc shape in section are formed on one main surface by having a prescribed track pitch in correspondence to respective recording tracks and recording pits 5, 6, 7 indicting information signals are formed in these groove parts 2, 3, 4. The radius of curvature of the groove parts 2, 3, 4 having the arc shape in section, defined as R, and the track pitch, defined as Tp, are 0.5Tp

公开(公告)号：JPH06131696A

公开(公告)日：1994-05-13

申请号：JP12978293

申请日：1993-05-31

Applicant: SONY CORP

Inventor： IGARASHI SHUICHI ,  TOMITA TAKASHI

IPC: G11B7/24 ,  G11B11/10 ,  G11B11/105

Abstract: PURPOSE:To provide a recording and reproducing system with high density recording for a disk by letting the thickness of corresponding to the clamping area on an optical disk substrate be thicker than a clamping area corresponding to an optical recording area. CONSTITUTION:The optical recording area R and the clamping area C are provided, and a recording part 2 in which, for example, a magnetic layer or a magneto-optical recording layer, or a recording area consisting of irregularity in accordance with information is formed at the optical recording area R, and a hub 3 is mounted on the clamping area C. The thickness of a transparent substrate for the optical recording area R transmitted by a laser beam actually when recording/reproduction is performed is formed thinly, and that of the transparent substrate for the clamping area C not transmitted by the laser beam is thickened than the thickness of the optical recording area R. Since the thickness of the transparent substrate for the optical recording area R is thinned in such a way, a ratio to increase aberration due to the inclination of the disk can be reduced, and also, since the thickness of the transparent substrate for the clamping area C is thickened, strength can be added and deformation can be evaded.

公开(公告)号：JPH0611035B2

公开(公告)日：1994-02-09

申请号：JP6660183

申请日：1983-04-15

Applicant: SONY CORP

Inventor： TOMITA TAKASHI ,  KANO YASUO ,  USUI SETSUO

IPC: H01L21/20 ,  H01L21/268

公开(公告)号：JPH02177422A

公开(公告)日：1990-07-10

申请号：JP33134388

申请日：1988-12-28

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  TOMITA TAKASHI ,  HARA MASATERU ,  USUI SETSUO

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To do favorable annealing of a substance to be annealed which contains substance having volatility and to facilitate the work by arranging the spots of light beams, which are applied to sweep the substance to be annealed, in such distribution that the energy becomes great by stages or continuously from the front side of the sweep to the rear side. CONSTITUTION:In a light beam annealing method that the annealing is done by sweep irradiation of light beams, the spots of light beams, which are applied to sweep the substance 1 to be annealed, are arranged in such distribution that the energy becomes great by stages or continuously from the magnitude at a degree that the annealing effect arises only at the surface of the substance 1 to be annealed to the magnitude that the annealing effect arises down to necessary depth. For example, the trace of a zigzag pattern is drawn left and right as shown in the figure at an amorphous layer 3 consisting of a-Si:H, and the energy of the spots s of light beams, which sweep it only once along the parallel lines, is distributed in seven stages of E1 to E7 from the front side of the sweeping direction of the spot s to the rear side.

公开(公告)号：JPH01313930A

公开(公告)日：1989-12-19

申请号：JP14610088

申请日：1988-06-14

Applicant: SONY CORP

Inventor： TOMITA TAKASHI ,  SAMEJIMA TOSHIYUKI ,  USUI SETSUO

IPC: B01J19/10 ,  C30B31/04 ,  C30B31/20 ,  H01L21/20 ,  H01L21/22 ,  H01L21/268

Abstract: PURPOSE:To dope or form films efficiently and evenly by a method wherein a semiconductor substrate is irradiated with laser beams while a liquid and the semiconductor substrate are being subjected to ultrasonic oscillation or the liquid is being poured out on the surface of the semiconductor substrate. CONSTITUTION:A semiconductor substrate 2 is irradiated with laser beams 4 while a liquid 1 and the semiconductor substrate 2 are being subjected to ultrasonic oscillation or the liquid 1 is being poured out on the surface of the semiconductor substrate 2. Consequently, the bubbles 5 raised in the liquid 1 by the laser beam irradiation are rapidly removed from the part near the surface of the semiconductor substrate 2 by the ultrasonic oscillation or the running liquid 1. Through these procedures, the laser beams 4 can be prevented from being reflected or bent on the interface between the bubbles 5 and the liquid 1 so that films may be doped or formed efficiently and evenly.

公开(公告)号：JPH01205524A

公开(公告)日：1989-08-17

申请号：JP3017588

申请日：1988-02-12

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  TOMITA TAKASHI ,  USUI SETSUO

IPC: H01L21/28 ,  H01L21/8238 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L29/40 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To bring two semiconductors of different conductivity types into ohmic contact with each other without using a metal wiring part by a method wherein the semiconductor of a first conductivity type and the semiconductor of a second conductivity type whose carrier concentration values for both is 1X10 cm or more. CONSTITUTION:Strip-shaped n type polycrystalline Si 2 and p type polycrystalline Si 3 which have been doped with an impurity of high concentration are formed on a glass substrate 1. One end part of this p type polycrystalline Si 3 is overlapped on one end part of the n type polycrystalline Si 2. A carrier concentration value for both of at least a junction part of the n type polycrystalline Si 2 and p type polycrystalline Si 3 is 1X10 cm or more. An ohmic junction is formed by these n type polycrystalline Si 2 and p type polycrystalline Si 3.

公开(公告)号：JPS63224317A

公开(公告)日：1988-09-19

申请号：JP5821587

申请日：1987-03-13

Applicant: SONY CORP

Inventor： TOMITA TAKASHI

IPC: H01L21/20 ,  H01L21/324

Abstract: PURPOSE:To prevent the warpage of a substrate after the fusion recrystallization thereof by forming a thin film having a thermal expansion coefficient substantially equal to that of a thin film semiconductor layer on the other surface of an insulating substrate, and heating both surfaces. CONSTITUTION:In fusing and recrystallizing a thin film semiconductor layer on an insulating substrate, a thin film 13 having a thermal expansion coefficient substantially equal to that of a thin film semiconductor layer 12 is formed on the other surface of an insulating substrate 11, and both surface are heated to fuse and recrystallize the thin film semiconductor layer 12, thereby forming single crystal thin film 17. As the thin film 13, a thin film of the same material as the thin film semiconductor layer 12 or a different thin film having a substantially equal thermal expansion coefficient can be used. With this, both the thin film semiconductor layer 12 and the thin film 13 are going to contract, so the warpage of the substrate 11 is prevented as a result, and also, since the substrate 11 does not warp, the crystallizability of the recrystallized single crystal thin film 17 becomes good.

公开(公告)号：JPS6263417A

公开(公告)日：1987-03-20

申请号：JP20271885

申请日：1985-09-13

Applicant: SONY CORP

Inventor： TOMITA TAKASHI

IPC: H01L21/20 ,  H01L21/324

Abstract: PURPOSE:To make large crystal grains growth at desired positions, by forming a nonuniform density distribution of impurity atoms in a polycrystalline semiconductor thin film by applying ion beam irradiation of impurity atom, and performing solid phase growth by thermal treatment. CONSTITUTION:A polycrystalline Si film 2 is irradiated intermittently with an equal interval by an iron beam 4 having an intensity distribution approximate to the Gaussian distribution. In this polycrystalline Si film 2, a periodical density distribution of impurity atom in which the Ganssian distribution is periodically repeated is formed, and a solid phase growth is performed by annealing. Thereby, the growth of crystal grains can be progressed with priority from the part of low impurity atom density, and extended to the outer region of high impurity atom density with high growth speed. Thus, large crystal grains with a diameter of about 10-100mum can be grown in the part of low impurity atom density, with excellent reproducibility.

公开(公告)号：JPS6247113A

公开(公告)日：1987-02-28

申请号：JP18777485

申请日：1985-08-27

Applicant: SONY CORP

Inventor： TOMITA TAKASHI ,  USUI SETSUO

IPC: H01L21/20 ,  H01L21/324

Abstract: PURPOSE:To form more thin films of plane azimuth 100 than thin films of plane 111 by emitting an energy beam to a configuration of a plurality of strips and couplers of the strips to recrystallize them to form thin semiconductor films. CONSTITUTION:A thin semiconductor film 1 is coated on an insulating substrate. A region 1M is the melted region of the film 1 melted by a movable heater 3. The region 1M is cooled to be recrystallized by passing the heater 3. The film1 is formed by etching in the shape made of parallel strips 1A and couplers 1B for coupling the adjacent strips 1A. Thus, the grain boundary generated in this manner is pressed to the edges of the strips 1A, and the most of the strips 1A are preferably single-crystallized. When the film 1 is recrystallized, the thin single crystal film 1' of plane 100 in the superior plane azimuth to the thin single crystal film 1' of plane 111 of plane azimuth is invaded from the adjacent strip 1A through the coupler 1B as the heater 3 moves. Thus, the films 1' of plane 100 are continuously formed.

公开(公告)号：JPS59189676A

公开(公告)日：1984-10-27

申请号：JP6433983

申请日：1983-04-12

Applicant: Sony Corp

Inventor： TOMITA TAKASHI ,  KANOU YASUO ,  USUI SETSUO

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/78609 ,  H01L29/78669

Abstract: PURPOSE:To obtain a thin film transistor, whose characteristics are stable, by providing a source and drain, which are isolated to each other, and a second amorphous semiconductor layer on a first amorphous semiconductor layer, thereby suppressing a leaking current between the source and the drain. CONSTITUTION:On a glass substrate 12, e.g., an Al gate electrode 14 is formed. On the substrate 12 including the gate electrode 14, e.g., an insulating layer 13 such as SiO2 or Si3N4 and a first intrinsic amorphous silicon layer 15 are sequentially formed. On the first amorphous silicon layer 15, N amorphous silicon layers 16 and 17 corresponding to a source and a drain are formed so that they are isolated to each other. For example, an Al source electrode 18 and a drain electrode 19 are formed thereon. A second intrinsic amorphous silicon layer 20 is formed on the first amorphous silicon layer 15 at a position corresponding to a gate part.

Abstract translation: 目的：为了获得其特性稳定的薄膜晶体管，通过提供彼此隔离的源极和漏极以及第一非晶半导体层上的第二非晶半导体层，从而抑制源极和漏极之间的泄漏电流 排水。 构成：在玻璃基板12上形成例如Al栅电极14。 在包括栅电极14的基板12上，例如，诸如SiO 2或Si 3 N 4的绝缘层13和第一本征非晶硅层15。 在第一非晶硅层15上形成对应于源极和漏极的N +非晶硅层16和17，使得它们彼此隔离。 例如，在其上形成有Al源电极18和漏电极19。 第二本征非晶硅层20在对应于栅极部分的位置处形成在第一非晶硅层15上。