公开(公告)号：FR2880990B1

公开(公告)日：2007-04-27

申请号：FR0500408

申请日：2005-01-14

Applicant: ST MICROELECTRONICS SA

Inventor： PRIMA JENS ,  ROY FRANCOIS

IPC: H01L31/02 ,  H01L21/60 ,  H01L27/14

公开(公告)号：FR2884351A1

公开(公告)日：2006-10-13

申请号：FR0503570

申请日：2005-04-11

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS ,  TOURNIER ARNAUD ,  MARCELLIER YANN

IPC: H01L27/146 ,  H01L21/266

Abstract: Procédé de fabrication d'un circuit intégré (CI) comprenant la réalisation d'une photodiode (PD) comportant la formation d'un empilement de trois couches semi-conductrices et la formation d'une zone de stockage surdopée (PK) dans la deuxième couche de l'emplacement, et la réalisation d'un transistor de lecture (TR) comportant la formation d'une grille (G) au-dessus de l'empilement. La formation de la zone de stockage (PK) comprend la réalisation d'un masque d'implantation (MS) au-dessus de la grille et de l'empilement et possédant une ouverture découvrant une partie de la grille et une partie de la surface supérieure de l'empilement située à côté de ladite partie découverte de la grille, et une première implantation oblique (IMP1) de dopants à travers ladite ouverture.

公开(公告)号：FR2857507A1

公开(公告)日：2005-01-14

申请号：FR0308326

申请日：2003-07-08

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS

IPC: H01L21/00 ,  H01L27/146 ,  H01L31/0328 ,  H01L31/11

公开(公告)号：FR2844398A1

公开(公告)日：2004-03-12

申请号：FR0211215

申请日：2002-09-11

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/08

Abstract: A monolithic photodetector comprises a first active area of doped single-crystal silicon corresponding to first and second photodiodes having same surface area as two charge transfer metal oxide semiconductor (MOS) transistors. A cathode of each photodiode is connected to a cathode of the storage diode via the charge transfer MOS transistors as one storage diode. A monolithic photodetector comprises: (i) a first active area of doped single-crystal silicon corresponding to first and second photodiodes having a same surface area as two charge transfer MOS transistors, and as one storage diode, a cathode of each photodiode is connected to a cathode of the storage diode via one of the charge transfer MOS transistors; (ii) second active area of doped single-crystal silicon arranged next to a portion of the first active area associated with the second photodiode and corresponding to a precharge switch having a first terminal connected to the cathode of the storage diode and a second terminal connected to a reference voltage; and (iii) a third active doped single-crystal silicon area arranged next to the first active area associated with the first photodiode and corresponding to two read MOS transistors in series. The gate of the read transistors is connected to the cathode of the storage diode and the drain or the source of the read transistors are connected to a processing system. The surfaces of the second and third active areas exposed to lighting are identical.

公开(公告)号：FR2829876A1

公开(公告)日：2003-03-21

申请号：FR0112051

申请日：2001-09-18

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS ,  DEVOIVRE THIERRY ,  MARCELLIER YANN

IPC: H01L27/146 ,  H01L31/0232

Abstract: A photo-sensitive cell, with an inlet face (1) for light and a photo-sensitive element (3), has an element forming a light guide placed between the inlet face and the photo-sensitive element to ensure the optical coupling between them. The light guide element is made up of at least two dielectric materials having different optical refraction indices and arranged in concentric volumes (11, 12). An Independent claim is also included for a photo-sensitive matrix incorporating these photo-sensitive cells.

公开(公告)号：FR2910703A1

公开(公告)日：2008-06-27

申请号：FR0655895

申请日：2006-12-22

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS

IPC: H01L21/768 ,  H01L27/146

Abstract: L'invention concerne un capteur d'image ou imageur comprenant :- une pluralité de composants formés sur un substrat (100),- une pluralité de niveaux (N1, N2, N3) métalliques superposés d'interconnexions des composants, lesdits niveaux métalliques étant situés dans une couche isolante (160-165) reposant sur le substrat et comportant au moins un niveau (N2) métallique donné comprenant une pluralité de lignes conductrices (120a, 120b, 120c) à base d'un premier matériau métallique et au moins un autre niveau (N3) situé sur le niveau (N2) donné et comprenant :- une ou plusieurs zones conductrices (130b) à base du premier matériau métallique et connectées respectivement à au moins une ligne conductrice (120b) dudit niveau (N2) donné,- une ou plusieurs autres zones (130c) conductrices à base d'un deuxième matériau métallique et connectées respectivement à au moins au moins une autre ligne conductrice (120c) dudit niveau (N2) donné.

公开(公告)号：FR2857158A1

公开(公告)日：2005-01-07

申请号：FR0307962

申请日：2003-07-01

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS

IPC: H04N3/15 ,  H01L27/146 ,  H04N5/335

Abstract: The process involves transferring electric charges between a photodiode and a detection node via a transfer transistor. A control circuit applies an electric potential on a gate electrode of the transistor, such that an electric potential of a conduction channel of the transistor has a value equal to maximum value of the potential of the node multiplied by a number greater than or equal to one. An independent claim is also included for a luminous flow detection matrix.

公开(公告)号：FR2829876B1

公开(公告)日：2004-07-02

申请号：FR0112051

申请日：2001-09-18

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS ,  DEVOIVRE THIERRY ,  MARCELLIER YANN

IPC: H01L27/146 ,  H01L31/0232

Abstract: A photo-sensitive cell, with an inlet face (1) for light and a photo-sensitive element (3), has an element forming a light guide placed between the inlet face and the photo-sensitive element to ensure the optical coupling between them. The light guide element is made up of at least two dielectric materials having different optical refraction indices and arranged in concentric volumes (11, 12). An Independent claim is also included for a photo-sensitive matrix incorporating these photo-sensitive cells.

公开(公告)号：FR2833408B1

公开(公告)日：2004-03-12

申请号：FR0116047

申请日：2001-12-12

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS

IPC: H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H01L27/144

Abstract: The photodiode comprises an upper pn junction (D1) formed between an upper layer and an intermediate layer supported by one portion of a semiconductor substrate. A lower junction is formed between the intermediate layer and the substrate portion. The forward bias voltage of the upper junction (D1) is lower than the forward bias voltage of the lower junction (D2). The charges are permitted to be stored in the photodiode until the said upper junction is forward-biased so as to favor (A1) the recombination of the carriers coming from the intermediate layer with the carriers of the upper layer.

公开(公告)号：FR2820882B1

公开(公告)日：2003-06-13

申请号：FR0101880

申请日：2001-02-12

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS

IPC: H01L27/144 ,  H01L27/146 ,  H01L31/0352