公开(公告)号：US11024748B2

公开(公告)日：2021-06-01

申请号：US15892850

申请日：2018-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Haeryong Kim ,  Sanghyun Jo ,  Hyeonjin Shin

IPC: H01L29/788 ,  H01L29/423 ,  H01L29/49 ,  H01L27/11521 ,  G11C11/54 ,  G11C11/56 ,  H01L29/786 ,  H01L29/06 ,  G11C13/02 ,  H01L21/28 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10 ,  B82Y10/00

Abstract: Provided are nonvolatile memory devices including 2-dimensional (2D) material and apparatuses including the nonvolatile memory devices. A nonvolatile memory device may include a storage stack including a plurality of charge storage layers between a channel element and a gate electrode facing the channel element. The plurality of charge storage layers may include a 2D material. An interlayer barrier layer may be further provided between the plurality of charge storage layers. The nonvolatile memory device may have a multi-bit or multi-level memory characteristic due to the plurality of charge storage layers.

公开(公告)号：US10811604B2

公开(公告)日：2020-10-20

申请号：US16144257

申请日：2018-09-27

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun Lee ,  Seongjun Park ,  Hyunjae Song ,  Hyeonjin Shin ,  Kibum Kim ,  Sanghun Lee ,  Yunho Kang

IPC: H01L45/00 ,  H01L21/768 ,  G11C13/00

Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.

公开(公告)号：US10770989B2

公开(公告)日：2020-09-08

申请号：US15584125

申请日：2017-05-02

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Hyeonjin Shin ,  Jeongho Cho ,  Hyungseok Kang ,  Han Kim ,  Sangwoo Kim ,  Seongsu Kim ,  Siuk Cheon

IPC: H02N1/04

Abstract: Example embodiments relate to an electrode structure, a triboelectric generator including the electrode structure, and a method of manufacturing the electrode structure. The electrode structure includes a flexible layer configured to be bendable by an external force and an electrode, at least some regions thereof being embedded in the flexible layer.

公开(公告)号：US10684560B2

公开(公告)日：2020-06-16

申请号：US15917947

申请日：2018-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Hyunjae Song ,  Minhyun Lee ,  Yeonchoo Cho

IPC: G03B27/62 ,  G03F7/20 ,  G03F1/62 ,  G03F1/22 ,  G03F1/64

Abstract: A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane and a passivation member. The pellicle membrane may include a carbon-based material having defects. The passivation member may cover the defects of the carbon-based material. The passivation member may include an inorganic material. The passivation member may be disposed on one or two surfaces of the pellicle membrane. The pellicle for the photomask may be applied to extreme ultraviolet (EUV) lithography.

公开(公告)号：US10683208B2

公开(公告)日：2020-06-16

申请号：US15222345

申请日：2016-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Hyoyoung Lee ,  Yeoheung Yoon

IPC: B32B9/00 ,  C01B32/921 ,  C01B21/06 ,  B82Y40/00 ,  B82Y30/00

Abstract: A method of manufacturing a MXene nanosheet includes removing an A atomic layer from an inorganic compound having a formula of Mn+1AXn to form a nanosheet, the nanosheet having a formula of Mn+1XnTs, and reducing the nanosheet having a formula of Mn+1XnTs to form an MXene nanosheet, the MXene nanosheet having a formula of Mn+1Xn, wherein M is at least one of Group 3 transition metal, Group 4 transition metal, Group 5 transition metal, and Group 6 transition metal, A is at least one of a Group 12 element, Group 13 element, Group 14 element, Group 15 element and Group 16 element, X is one of carbon (C), nitrogen (N) and a combination thereof, Ts is one of oxide (O), epoxide, hydroxide (OH), alkoxide having 1-5 carbon atoms, fluoride (F), chloride (Cl), bromide (Br), iodide (I), and a combination thereof, and n is one of 1, 2 and 3.

公开(公告)号：US20200091306A1

公开(公告)日：2020-03-19

申请号：US16259038

申请日：2019-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Yunseong Lee ,  Sanghyun Jo ,  Keunwook Shin ,  Hyeonjin Shin

IPC: H01L29/51 ,  H01L21/02

Abstract: Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.

公开(公告)号：US10331033B2

公开(公告)日：2019-06-25

申请号：US14791912

申请日：2015-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Seongjun Park

IPC: G03F7/11 ,  C08G83/00 ,  C08K3/30 ,  C08K3/38 ,  G03F7/40 ,  H01L21/47 ,  H01L21/4757 ,  G03F7/09

CPC classification number: G03F7/11 ,  C08G83/001 ,  C08K3/30 ,  C08K3/38 ,  C08K2003/3009 ,  C08K2003/385 ,  G03F7/094 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/47 ,  H01L21/47573

Abstract: A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent.

公开(公告)号：US20190123273A1

公开(公告)日：2019-04-25

申请号：US16144257

申请日：2018-09-27

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun Lee ,  Seongjun Park ,  Hyunjae Song ,  Hyeonjin Shin ,  Kibum Kim ,  Sanghun Lee ,  Yunho Kang

IPC: H01L45/00 ,  H01L21/768 ,  G11C13/00

Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.

公开(公告)号：US20190043946A1

公开(公告)日：2019-02-07

申请号：US16152576

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/08 ,  H01L29/04 ,  H01L29/45 ,  H01L29/417 ,  H01L29/267 ,  H01L21/285 ,  H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US10170325B2

公开(公告)日：2019-01-01

申请号：US15332287

申请日：2016-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon Kim ,  Hyeonjin Shin ,  Seongjun Park

IPC: H01L21/02 ,  H01L21/308 ,  H01L21/324 ,  H01L21/311 ,  H01L21/3213 ,  C09D1/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern.