Ultraviolet disinfection case
    91.
    发明授权
    Ultraviolet disinfection case 有权
    紫外消毒箱

    公开(公告)号:US09006680B2

    公开(公告)日:2015-04-14

    申请号:US14217694

    申请日:2014-03-18

    CPC classification number: A61L2/10 A61L2202/14 A61L2202/16

    Abstract: A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.

    Abstract translation: 用于消毒可流动产品(例如液体,悬浮液,霜剂,胶体,乳剂,粉末等)以及与其相关的附件和产品的溶液,例如容器,帽,刷子,施用器和/或 使用紫外线照射。 在一个实施例中,紫外线不可渗透盖被构造成包围对应于可流动产品的体积。 至少一个紫外线辐射源可以安装在盖上并被配置成产生用于消毒封闭区域的紫外线辐射。 紫外线辐射源可以被配置成只有当体积被紫外线不透水盖封住时才产生紫外线辐射。

    Ultraviolet Diffusive Illumination
    92.
    发明申请
    Ultraviolet Diffusive Illumination 有权
    紫外线扩散照明

    公开(公告)号:US20150069265A1

    公开(公告)日:2015-03-12

    申请号:US14478266

    申请日:2014-09-05

    CPC classification number: A61L2/10 A61L2202/14 H05B33/0854 H05B37/0227

    Abstract: A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. At least one of the plurality of surfaces can be configured to diffusively reflect at least 70% of the ultraviolet radiation and at least one of the plurality of surfaces can be configured to transmit at least 30% of the ultraviolet radiation and reflect at least 10% of the ultraviolet radiation.

    Abstract translation: 提供了用于产生紫外线漫射辐射的解决方案。 扩散紫外线照射器包括位于反射腔内的至少一个紫外线辐射源,该反射腔包括多个表面。 多个表面中的至少一个可以被配置为扩散地反射至少70%的紫外线辐射,并且多个表面中的至少一个可被配置为透射至少30%的紫外线辐射并且反射至少10% 的紫外线辐射。

    Deep ultraviolet light emitting diode
    94.
    发明授权
    Deep ultraviolet light emitting diode 有权
    深紫外线发光二极管

    公开(公告)号:US08791450B2

    公开(公告)日:2014-07-29

    申请号:US13623381

    申请日:2012-09-20

    CPC classification number: H01L33/06 H01L33/025 H01L33/04 H01L33/14 H01L33/325

    Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a percolated carbon atomic plane.

    Abstract translation: 提供了碳掺杂短周期超晶格。 异质结构包括短周期超晶格,其包括与多个势垒交替的多个量子阱。 量子阱和/或势垒中的一个或多个包括一个过孔碳原子面。

    Deep Ultraviolet Light Emitting Diode
    95.
    发明申请
    Deep Ultraviolet Light Emitting Diode 有权
    深紫外线发光二极管

    公开(公告)号:US20140166977A1

    公开(公告)日:2014-06-19

    申请号:US14184741

    申请日:2014-02-20

    Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).

    Abstract translation: 提供了碳掺杂短周期超晶格。 异质结构包括短周期超晶格,其包括与多个势垒交替的多个量子阱。 量子阱和/或势垒中的一个或多个包括碳掺杂层(例如,非过滤或质子交换的碳原子平面)。

    Semiconductor Material Doping
    97.
    发明申请
    Semiconductor Material Doping 有权
    半导体材料掺杂

    公开(公告)号:US20140077154A1

    公开(公告)日:2014-03-20

    申请号:US13803753

    申请日:2013-03-14

    Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

    Abstract translation: 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如,可以选择目标价带不连续性,使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 另外,可以选择量子阱和/或相邻势垒的目标掺杂水平以促进穿过势垒的空穴的实际空间传递。 可以形成量子阱和相邻势垒,使得实际的带不连续性和/或实际掺杂水平对应于相关目标。

    Superlattice Structure
    98.
    发明申请

    公开(公告)号:US20130292638A1

    公开(公告)日:2013-11-07

    申请号:US13803718

    申请日:2013-03-14

    CPC classification number: H01L33/06 H01L33/0045 H01L33/32

    Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.

    Light Emitting Device Substrate with Inclined Sidewalls
    99.
    发明申请
    Light Emitting Device Substrate with Inclined Sidewalls 有权
    具有倾斜侧壁的发光装置基板

    公开(公告)号:US20130260490A1

    公开(公告)日:2013-10-03

    申请号:US13852487

    申请日:2013-03-28

    CPC classification number: H01L33/20 H01L33/0095 H01L33/22

    Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.

    Abstract translation: 提供了一种具有改进的光提取的发光器件。 可以通过在衬底的表面上外延生长发光结构来形成发光器件。 衬底可以被刻划以在衬底上形成一组成角度的侧表面。 对于所述一组倾斜的侧面中的每个成角度的侧表面,到所述一组成角度的侧表面中的每个成角度的侧表面的至少一部分的表面切向矢量形成大约十到八十度之间的角度,其中正常 底物表面的载体。 可以清洁基板以从成角度的侧面清洁碎屑。

    Deep Ultraviolet Light Emitting Diode
    100.
    发明申请
    Deep Ultraviolet Light Emitting Diode 有权
    深紫外线发光二极管

    公开(公告)号:US20130193409A1

    公开(公告)日:2013-08-01

    申请号:US13803681

    申请日:2013-03-14

    Abstract: A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

    Abstract translation: 提供一种发光二极管,其包括n型接触层和与n型接触层相邻的发光结构。 光产生结构包括一组量子阱。 接触层和发光结构可以被配置为使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量 生成结构。 另外,发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。

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