公开(公告)号：US20150336789A1

公开(公告)日：2015-11-26

申请号：US14531843

申请日：2014-11-03

Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： HENRY A. SODANO ,  ANEESH KOKA VENKATA

IPC: B81B3/00 ,  B81C3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/032 ,  B81C1/0019 ,  B81C3/005 ,  G01P15/0922 ,  H01L41/1136 ,  H01L41/31 ,  H02N2/18

Abstract: A nano-electromechanical system comprises piezoelectric vertically aligned BaTiO3 nanowire arrays for energy-harvesting applications, sensors, and other applications. The aligned piezoelectric nanowire arrays provide highly accurate nano-electromechanical system-based dynamic sensor with a wide operating bandwidth and unity coherence and energy harvesters at low frequencies. The growth of vertically aligned (B45-mm long) barium titanate nanowire arrays is realized through a hydrothermal synthesis.

Abstract translation: 纳米机电系统包括用于能量收集应用，传感器和其它应用的压电垂直排列的BaTiO3纳米线阵列。 对准的压电纳米线阵列提供高精度的基于纳米机电系统的动态传感器，具有宽的工作带宽和低频的单位相干和能量收集器。 通过水热合成实现垂直取向（B45-mm）钛酸钡纳米线阵列的生长。

公开(公告)号：US20150323783A1

公开(公告)日：2015-11-12

申请号：US14388213

申请日：2013-04-24

Applicant: PANASONIC CORPORATION

Inventor： Toshiaki HORIE ,  Soichiro HIRAOKA ,  Shinsuke NAKAZONO ,  Kazuki KOMAKI

IPC: G02B26/08 ,  G02B26/10

CPC classification number: G02B26/0858 ,  B81B3/0043 ,  B81B2201/032 ,  B81B2201/042 ,  B81B2203/0163 ,  G02B26/0833 ,  G02B26/10 ,  G02B26/101 ,  G02B26/105

Abstract: An optical reflecting device includes a mirror part, a pair of joints, a pair of vibration parts, a plurality of driving parts, and a fixed part. Each of the joints has a first end connected to respective one the facing positions to each other on the mirror part and a second end opposite to the first end, and extends along a first axis. Each of the vibration parts has a central portion connected to the second end of respective one of the joints. A plurality of driving parts are disposed in each of the pair of vibration parts, and rotate the mirror part. Both ends of each of the pair of vibration parts are connected to the fixed part. The beam width defined as the length of each of the joints in a direction orthogonal to the first axis is greater than the beam width of each of the pair of vibration parts.

Abstract translation: 光反射装置包括镜部，一对接头，一对振动部，多个驱动部以及固定部。 每个接头具有在反射镜部分上彼此相对的相应位置的第一端和与第一端相对的第二端，并且沿着第一轴线延伸。 每个振动部分具有连接到相应的一个接头的第二端的中心部分。 在所述一对振动部的每一个中设置有多个驱动部，并且旋转所述镜部。 一对振动部的两端部与固定部连接。 被定义为与第一轴正交的方向上的每个接头的长度的梁宽度大于该对振动部分中的每一个的梁宽度。

公开(公告)号：US20150298963A1

公开(公告)日：2015-10-22

申请号：US14752496

申请日：2015-06-26

Applicant: ALPS ELECTRIC CO., LTD. ,  National Institute of Advanced Industrial Science and Technology

Inventor： Tomomasa TAKATSUKA ,  Isao TAKAHASHI ,  Teppei SUGAWARA ,  Kenichi MITSUMORI ,  Kinji ASAKA ,  Takushi SUGINO

IPC: B81B3/00

CPC classification number: B81B3/0021 ,  B81B2201/032 ,  F03G7/005

Abstract: A polymer actuator element includes an electrolyte layer and electrode layers, in which the electrode layer includes an activated carbon nanofiber and a carbon nanohorn.

Abstract translation: 聚合物致动器元件包括电解质层和电极层，其中电极层包括活性炭纳米纤维和碳纳米角。

公开(公告)号：US20140024147A1

公开(公告)日：2014-01-23

申请号：US13552721

申请日：2012-07-19

Applicant: Yonglin Xie ,  Weibin Zhang

Inventor： Yonglin Xie ,  Weibin Zhang

IPC: H01L21/308

CPC classification number: B41J2/1601 ,  B41J2/1607 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/032 ,  B81B2201/052 ,  B81C1/00158

Abstract: A MEMS device fabrication method includes providing a substrate and a chamber wall material layer on a first surface of the substrate, the chamber wall material layer including a chamber cavity having a sacrificial material located therein. A mask material is deposited on the chamber wall material layer and the sacrificial material and patterned to form a mask pattern including a plurality of discrete portions. The mask material and some of the sacrificial material are removed to transfer the mask pattern including the plurality of discrete portions to the sacrificial material. A membrane material layer is deposited on the chamber wall material layer and the sacrificial material that includes the transferred mask pattern including the plurality of discrete portions. Some of the substrate and the sacrificial material are removed to release the membrane material layer using at least one process initiated from a second surface of the substrate.

Abstract translation: MEMS器件制造方法包括在衬底的第一表面上提供衬底和室壁材料层，室壁材料层包括具有位于其中的牺牲材料的腔室腔。 掩模材料沉积在室壁材料层和牺牲材料上并被图案化以形成包括多个离散部分的掩模图案。 去除掩模材料和一些牺牲材料以将包括多个离散部分的掩模图案转移到牺牲材料。 膜材料层沉积在室壁材料层和牺牲材料上，该牺牲材料包括包含多个离散部分的转印掩模图案。 使用从衬底的第二表面引发的至少一种工艺，去除一些衬底和牺牲材料以释放膜材料层。

公开(公告)号：US08440973B1

公开(公告)日：2013-05-14

申请号：US12660933

申请日：2010-03-05

Applicant: Felix E Fernandez ,  Nelson Sepulveda-Alancastro ,  Armando Rua ,  Rafmag Cabrera

Inventor： Felix E Fernandez ,  Nelson Sepulveda-Alancastro ,  Armando Rua ,  Rafmag Cabrera

IPC: G01J5/20

CPC classification number: B81B3/0024 ,  B81B2201/032 ,  G01J5/40 ,  G01J2005/0077

Abstract: The invention utilizes the changes in physical properties of materials during a solid-solid phase transition in order to enhance the sensitivity of cantilever IR detectors. The substantial changes in properties during insulator-to-metal transitions (IMTs) of some materials are useful for controlling purposes according to the invention. A cantilever arrangement is provided with a cantilever being coated with an insulator-to-metal transitions (IMTs) material. Bending of the cantilever is achieved when the temperature of the (IMTs) material is within its phase transition temperature range. A Focal Plane Array (FPA) for detecting Infrared (IR) radiation including the cantilever arrangement of the invention is also proposed.

Abstract translation: 本发明在固相转变期间利用材料物理性质的变化，以提高悬臂IR探测器的灵敏度。 在某些材料的绝缘体 - 金属转变（IMT）期间的性质的实质性变化对于根据本发明的控制目的是有用的。 悬臂装置设有悬臂，涂有绝缘体 - 金属过渡（IMT）材料。 当（IMT）材料的温度在其相变温度范围内时，实现悬臂的弯曲。 还提出了用于检测包括本发明的悬臂装置的红外（IR）辐射的焦平面阵列（FPA）。

公开(公告)号：US20130067909A1

公开(公告)日：2013-03-21

申请号：US13701793

申请日：2011-06-01

Applicant: Sagnik Pal ,  Huikai Xie ,  Karl R. Zawoy

Inventor： Sagnik Pal ,  Huikai Xie ,  Karl R. Zawoy

IPC: F03G7/06

CPC classification number: F03G7/065 ,  B81B3/0024 ,  B81B2201/032 ,  G02B26/0858 ,  H01L41/094 ,  H02N1/00

Abstract: A curved multimorph actuator is provided composed of a plurality of materials, each material exhibiting different deformations in response to a stimulus, such as heat. Application of different stimuli causes the actuator to bend and/or twist. In an embodiment, the actuator is capable of rotating an object about its center without significantly shifting the center in one or more dimensions. In a further embodiment, the actuator can be used to rotate an object about a first axis and a second axis, wherein the first axis and the second axis are mutually perpendicular. In an embodiment, rotation about the first axis and the second axis are achieved in combination. In another embodiment, rotation about the first axis is produced in response to a first stimulus and rotation about the second axis is produced in response to a second stimulus.

Abstract translation: 提供由多种材料组成的弯曲多压电致动器，每种材料响应于诸如热的刺激而呈现不同的变形。 不同刺激的应用使致动器弯曲和/或扭曲。 在一个实施例中，致动器能够围绕其中心旋转物体，而不会在一个或多个维度上显着地偏移中心。 在另一实施例中，致动器可用于围绕第一轴线和第二轴线旋转物体，其中第一轴线和第二轴线相互垂直。 在一个实施例中，组合地实现围绕第一轴线和第二轴线的旋转。 在另一个实施例中，响应于第一刺激而产生围绕第一轴的旋转，响应于第二刺激而产生围绕第二轴的旋转。

公开(公告)号：US20130032906A1

公开(公告)日：2013-02-07

申请号：US13642208

申请日：2011-04-18

Applicant: Junya Ogawa ,  Norihiro Yamauchi ,  Tomoaki Matsushima ,  Koichi Aizawa

Inventor： Junya Ogawa ,  Norihiro Yamauchi ,  Tomoaki Matsushima ,  Koichi Aizawa

IPC: H01L29/84

CPC classification number: H01L41/1136 ,  B81B2201/032 ,  B81C1/00658 ,  G01J5/04 ,  G01J5/046 ,  G01J5/34 ,  G01P15/09 ,  G01P2015/0828 ,  H01L37/02 ,  H01L41/0815 ,  H02N2/186

Abstract: A ferroelectric device comprises: a silicon substrate (a first substrate); a lower electrode (a first electrode) formed on one surface side of first substrate; a ferroelectric film formed on a surface of lower electrode opposite to first substrate side; and an upper electrode (a second electrode) formed on a surface of ferroelectric film opposite to lower electrode side. The ferroelectric film is formed of a ferroelectric material with a lattice constant difference from silicon. The ferroelectric device further comprises a shock absorbing layer formed of a material with better lattice matching with ferroelectric film than silicon and provided directly below the lower electrode. The first substrate is provided with a cavity that exposes a surface of shock absorbing layer opposite to lower electrode side.

Abstract translation: 铁电体器件包括：硅衬底（第一衬底）; 形成在第一基板的一个表面侧的下电极（第一电极） 形成在与第一基板侧相反的下电极的表面上的铁电体膜; 以及形成在与下电极侧相反的铁电体膜的表面上的上电极（第二电极）。 铁电体膜由与硅形成的晶格常数不等的铁电体形成。 所述铁电体元件还包括由比铁强电介质膜更好的晶格匹配的材料形成的冲击吸收层，并且直接设置在下电极的下方。 第一基板设置有暴露与下电极侧相对的减震层的表面的空腔。

公开(公告)号：US20120007150A1

公开(公告)日：2012-01-12

申请号：US13178076

申请日：2011-07-07

Applicant: Claudia CALIGIORE ,  Salvatore LEONARDI ,  Salvatore BAGLIO ,  Bruno ANDO'

Inventor： Claudia CALIGIORE ,  Salvatore LEONARDI ,  Salvatore BAGLIO ,  Bruno ANDO'

IPC: H01L29/84 ,  H01L21/302

CPC classification number: B81C1/00246 ,  B81B2201/032 ,  B81B2201/058 ,  B81B2203/0338

Abstract: An embodiment relates to a device integrated on a semiconductor substrate of a type comprising at least one first portion for the integration of at least one microfluidic system, and a second portion for the integration of an additional circuitry. The microfluidic system comprises at least one cavity realized in a containment layer of the integrated device closed on top by at least one portion of a polysilicon layer, this polysilicon layer being a thin layer shared by the additional circuitry and the closing portion of the cavity realizing a piezoresistive membrane for the microfluidic system.

Abstract translation: 实施例涉及集成在半导体衬底上的器件，其类型包括用于集成至少一个微流体系统的至少一个第一部分和用于集成附加电路的第二部分。 微流体系统包括在集成装置的容纳层中实现的至少一个空腔，其通过多晶硅层的至少一部分封装在顶部上，该多晶硅层是由附加电路共享的薄层和空腔的闭合部分，其实现 用于微流体系统的压阻膜。

公开(公告)号：US08022599B2

公开(公告)日：2011-09-20

申请号：US12369828

申请日：2009-02-12

Applicant: Takashi Kawakubo ,  Toshihiko Nagano ,  Michihiko Nishigaki

Inventor： Takashi Kawakubo ,  Toshihiko Nagano ,  Michihiko Nishigaki

IPC: H01L41/04

CPC classification number: B81B3/0008 ,  B81B2201/032 ,  H01G5/16 ,  H01G5/18 ,  H01H2057/006 ,  H01L41/094

Abstract: An actuator includes: a substrate; a fixed electrode provided on a major surface of the substrate; a first dielectric film provided on the fixed electrode, and made of crystalline material; a movable beam opposed to the major surface, and held above the substrate with a gap thereto; a movable electrode; and a second dielectric film. The movable electrode is provided on a surface of the movable beam facing the fixed electrode, and has an alternate voltage applied between the fixed electrode and the movable electrode. The second dielectric film is provided on a surface of the movable beam facing the fixed electrode, and is made of crystalline material.

Abstract translation: 致动器包括：基板; 设置在所述基板的主表面上的固定电极; 设置在固定电极上并由结晶材料制成的第一电介质膜; 与主表面相对的可移动光束，并且与基板间隔开间隔地保持; 可动电极; 和第二电介质膜。 可动电极设置在与固定电极相对的可动光束的表面上，并且在固定电极和可动电极之间施加交替电压。 第二电介质膜设置在面向固定电极的可动光束的表面上，并且由结晶材料制成。

公开(公告)号：US08004162B2

公开(公告)日：2011-08-23

申请号：US12545524

申请日：2009-08-21

Applicant: Nobuyuki Koike ,  Takashi Tamura

Inventor： Nobuyuki Koike ,  Takashi Tamura

IPC: H01L41/08

CPC classification number: B81B3/0081 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/032 ,  G01C19/56 ,  G01C25/00 ,  H01L41/0933 ,  H01L41/1132 ,  H01L41/1136 ,  H01L41/316 ,  Y10T29/42

Abstract: A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The piezoelectric film is represented by Pb1+X(ZrYTi1−Y)O3+X(0≦X≦0.3, 0≦Y≦0.55) and a peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less. The second electrode film is laminated on the piezoelectric film.

Abstract translation: 提供一种压电装置，包括基板，第一电极膜，压电膜和第二电极膜。 第一电极膜形成在基板上。 压电薄膜由Pb1 + X（ZrYTi1-Y）O3 + X（0＆nlE; X＆lt; NlE; 0.3,0＆nlE; Y＆nlE; 0.55）表示，通过X射线衍射法测得的烧绿石相的峰强度为10％ 相对于钙钛矿相的（100）面取向，（001）面取向，（110）面取向，（101）面取向和（111）面取向的峰值强度之和小， 所述压电膜形成在所述第一电极膜上，膜厚度为400nm以上且1000nm以下。 第二电极膜层叠在压电膜上。